DE60335756D1 - Integrierte Halbleiterschaltung - Google Patents

Integrierte Halbleiterschaltung

Info

Publication number
DE60335756D1
DE60335756D1 DE60335756T DE60335756T DE60335756D1 DE 60335756 D1 DE60335756 D1 DE 60335756D1 DE 60335756 T DE60335756 T DE 60335756T DE 60335756 T DE60335756 T DE 60335756T DE 60335756 D1 DE60335756 D1 DE 60335756D1
Authority
DE
Germany
Prior art keywords
semiconductor circuit
integrated semiconductor
integrated
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335756T
Other languages
English (en)
Inventor
Rie Itoh
Noriaki Matsuno
Masato Tsunoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of DE60335756D1 publication Critical patent/DE60335756D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/57Protection from inspection, reverse engineering or tampering
    • H01L23/576Protection from inspection, reverse engineering or tampering using active circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5225Shielding layers formed together with wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/922Active solid-state devices, e.g. transistors, solid-state diodes with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE60335756T 2003-02-04 2003-07-14 Integrierte Halbleiterschaltung Expired - Lifetime DE60335756D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003027539 2003-02-04

Publications (1)

Publication Number Publication Date
DE60335756D1 true DE60335756D1 (de) 2011-02-24

Family

ID=32844175

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335756T Expired - Lifetime DE60335756D1 (de) 2003-02-04 2003-07-14 Integrierte Halbleiterschaltung

Country Status (6)

Country Link
US (1) US6998654B2 (de)
EP (3) EP1538666B1 (de)
JP (1) JP4242844B2 (de)
CN (1) CN1321451C (de)
DE (1) DE60335756D1 (de)
WO (1) WO2004070832A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7388260B1 (en) 2004-03-31 2008-06-17 Transmeta Corporation Structure for spanning gap in body-bias voltage routing structure
WO2006098528A1 (en) * 2005-03-15 2006-09-21 Sung Suk Ju Conductive device for electronic equipment
JP4106568B2 (ja) * 2005-09-26 2008-06-25 船井電機株式会社 デジタルチューナ用多層基板および多層基板
EP1984871A2 (de) * 2006-02-09 2008-10-29 Nxp B.V. Schaltungsanordnung, datenverarbeitungsvorrichtung mit einer solchen schaltungsanordnung sowie verfahren zur identifikation eines angriffs auf eine solche schaltungsanordnung
JP4552073B2 (ja) * 2008-02-21 2010-09-29 日本電気株式会社 半導体集積回路
US8901954B2 (en) 2011-11-18 2014-12-02 Tubitak Active shield with electrically configurable interconnections
CN103779334B (zh) * 2012-10-23 2016-12-21 北京同方微电子有限公司 一种用于智能卡的有源防护装置
CN112771655A (zh) * 2018-09-28 2021-05-07 株式会社索思未来 半导体集成电路装置以及半导体封装件构造
US10839109B2 (en) * 2018-11-14 2020-11-17 Massachusetts Institute Of Technology Integrated circuit (IC) portholes and related techniques

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535388A (en) * 1984-06-29 1985-08-13 International Business Machines Corporation High density wired module
JPH02209735A (ja) 1989-02-09 1990-08-21 Seiko Epson Corp 半導体装置
IL106513A (en) * 1992-07-31 1997-03-18 Hughes Aircraft Co Integrated circuit security system and method with implanted interconnections
FR2702595B1 (fr) * 1993-03-11 1996-05-24 Toshiba Kk Structure de câblage multicouche.
JP3037191B2 (ja) * 1997-04-22 2000-04-24 日本電気アイシーマイコンシステム株式会社 半導体装置
JP2000076140A (ja) * 1998-09-02 2000-03-14 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路
EP1053518B1 (de) 1998-11-05 2006-07-26 Infineon Technologies AG Schutzschaltung für eine integrierte schaltung
JP2001244414A (ja) 2000-02-29 2001-09-07 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路
JP2002043516A (ja) * 2000-07-19 2002-02-08 Toshiba Microelectronics Corp 半導体装置、及びメモリ装置
JPWO2003015169A1 (ja) * 2001-08-07 2004-12-02 株式会社ルネサステクノロジ 半導体装置およびicカード
US6936898B2 (en) * 2002-12-31 2005-08-30 Transmeta Corporation Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions

Also Published As

Publication number Publication date
WO2004070832A1 (ja) 2004-08-19
CN1321451C (zh) 2007-06-13
EP1538666A1 (de) 2005-06-08
EP1538666A4 (de) 2007-12-05
EP2048708A1 (de) 2009-04-15
EP1968112A3 (de) 2008-09-17
EP2048708B1 (de) 2011-01-12
EP1968112A2 (de) 2008-09-10
US6998654B2 (en) 2006-02-14
JP4242844B2 (ja) 2009-03-25
CN1703775A (zh) 2005-11-30
US20050280038A1 (en) 2005-12-22
EP1538666B1 (de) 2011-09-14
JPWO2004070832A1 (ja) 2006-06-01

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