DE60330798D1 - Zusammensetzung zur bildung einer antireflexschicht für die lithographie - Google Patents
Zusammensetzung zur bildung einer antireflexschicht für die lithographieInfo
- Publication number
- DE60330798D1 DE60330798D1 DE60330798T DE60330798T DE60330798D1 DE 60330798 D1 DE60330798 D1 DE 60330798D1 DE 60330798 T DE60330798 T DE 60330798T DE 60330798 T DE60330798 T DE 60330798T DE 60330798 D1 DE60330798 D1 DE 60330798D1
- Authority
- DE
- Germany
- Prior art keywords
- antireflexible
- composition
- forming
- lithographic layer
- lithographic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Epoxy Resins (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Polyamides (AREA)
- Polyethers (AREA)
- Polyesters Or Polycarbonates (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002295777 | 2002-10-09 | ||
JP2003126886 | 2003-05-02 | ||
PCT/JP2003/012875 WO2004034148A1 (ja) | 2002-10-09 | 2003-10-08 | リソグラフィー用反射防止膜形成組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60330798D1 true DE60330798D1 (de) | 2010-02-11 |
Family
ID=32095413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60330798T Expired - Lifetime DE60330798D1 (de) | 2002-10-09 | 2003-10-08 | Zusammensetzung zur bildung einer antireflexschicht für die lithographie |
Country Status (8)
Country | Link |
---|---|
US (2) | US7425399B2 (de) |
EP (1) | EP1560070B1 (de) |
JP (1) | JP4171920B2 (de) |
KR (1) | KR101026127B1 (de) |
AU (1) | AU2003271123A1 (de) |
DE (1) | DE60330798D1 (de) |
TW (1) | TWI280459B (de) |
WO (1) | WO2004034148A1 (de) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1757986B1 (de) * | 2004-04-09 | 2014-05-14 | Nissan Chemical Industries, Ltd. | Antireflexionsfilm für einen halbleiter mit kondensationspolymeren und verfahren zur herstellung einer fotoresiststruktur |
US8501393B2 (en) * | 2004-05-14 | 2013-08-06 | Nissan Chemical Industries, Ltd. | Anti-reflective coating forming composition containing vinyl ether compound |
US7691556B2 (en) | 2004-09-15 | 2010-04-06 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
JP4697464B2 (ja) * | 2004-10-12 | 2011-06-08 | 日産化学工業株式会社 | 含窒素芳香環構造を含むリソグラフィー用反射防止膜形成組成物 |
CN100585496C (zh) * | 2004-10-12 | 2010-01-27 | 日产化学工业株式会社 | 含有硫原子的形成光刻用防反射膜的组合物 |
EP1813987B1 (de) * | 2004-11-01 | 2011-08-24 | Nissan Chemical Industries, Ltd. | Sulfonsäureesterhaltige zusammensetzung zur erzeugung eines antireflexionsfilms für die lithographie |
US20060154485A1 (en) * | 2005-01-12 | 2006-07-13 | Bo Li | Sacrificial layers comprising water-soluble compounds, uses and methods of production thereof |
EP1691238A3 (de) * | 2005-02-05 | 2009-01-21 | Rohm and Haas Electronic Materials, L.L.C. | Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack |
JP4840609B2 (ja) * | 2005-04-19 | 2011-12-21 | 日産化学工業株式会社 | エチレンジカルボニル構造を有するポリマーを含むリソグラフィー用反射防止膜形成組成物 |
KR100781033B1 (ko) * | 2005-05-12 | 2007-11-29 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
JP4895049B2 (ja) * | 2005-06-10 | 2012-03-14 | 日産化学工業株式会社 | ナフタレン樹脂誘導体を含有するリソグラフィー用塗布型下層膜形成組成物 |
WO2007036982A1 (ja) | 2005-09-27 | 2007-04-05 | Nissan Chemical Industries, Ltd. | イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物 |
JP4753018B2 (ja) * | 2005-10-18 | 2011-08-17 | 日産化学工業株式会社 | 付加重合性樹脂を含むリソグラフィー用反射防止膜形成組成物 |
JP2007178885A (ja) * | 2005-12-28 | 2007-07-12 | Az Electronic Materials Kk | パターンおよび配線パターンならびにそれらの製造法 |
CN101473270B (zh) * | 2006-06-19 | 2014-08-06 | 日产化学工业株式会社 | 含有具有羟基的缩合系树脂的形成抗蚀剂下层膜的组合物 |
EP2085823B1 (de) * | 2006-10-12 | 2013-01-16 | Nissan Chemical Industries, Ltd. | Verfahren zur herstellung einer halbleiteranordnung unter verwendung eines vierfachschichtlaminats |
WO2008146847A1 (ja) * | 2007-05-30 | 2008-12-04 | Nissan Chemical Industries, Ltd. | 薄膜トランジスタ用ゲート絶縁膜形成剤 |
US20090042133A1 (en) * | 2007-08-10 | 2009-02-12 | Zhong Xiang | Antireflective Coating Composition |
WO2009034998A1 (ja) * | 2007-09-11 | 2009-03-19 | Nissan Chemical Industries, Ltd. | 窒素含有シリル基を含むポリマーを含有するレジスト下層膜形成組成物 |
JP4984098B2 (ja) * | 2007-12-13 | 2012-07-25 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びレジストパターンの形成方法 |
JP5141882B2 (ja) * | 2008-01-24 | 2013-02-13 | 日産化学工業株式会社 | バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 |
WO2009096340A1 (ja) * | 2008-01-30 | 2009-08-06 | Nissan Chemical Industries, Ltd. | 硫黄原子を含有するレジスト下層膜形成用組成物及びレジストパターンの形成方法 |
US8329387B2 (en) | 2008-07-08 | 2012-12-11 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US8221965B2 (en) * | 2008-07-08 | 2012-07-17 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US20100092894A1 (en) * | 2008-10-14 | 2010-04-15 | Weihong Liu | Bottom Antireflective Coating Compositions |
JPWO2010061774A1 (ja) * | 2008-11-27 | 2012-04-26 | 日産化学工業株式会社 | アウトガス発生が低減されたレジスト下層膜形成組成物 |
US8710491B2 (en) | 2008-11-28 | 2014-04-29 | Nissan Chemical Industries, Ltd. | Forming agent for gate insulating film of thin film transistor |
JP5534229B2 (ja) * | 2008-11-28 | 2014-06-25 | 日産化学工業株式会社 | 薄膜トランジスタ用ゲート絶縁膜形成組成物 |
DE102008062447B3 (de) * | 2008-12-10 | 2010-09-16 | Technische Universität Ilmenau | Flexible Schichtstruktur zur Erfassung mechanischer Parameter und Verfahren zu deren adaptiven Verhalten |
US8501383B2 (en) * | 2009-05-20 | 2013-08-06 | Rohm And Haas Electronic Materials Llc | Coating compositions for use with an overcoated photoresist |
US9244352B2 (en) | 2009-05-20 | 2016-01-26 | Rohm And Haas Electronic Materials, Llc | Coating compositions for use with an overcoated photoresist |
US8883407B2 (en) * | 2009-06-12 | 2014-11-11 | Rohm And Haas Electronic Materials Llc | Coating compositions suitable for use with an overcoated photoresist |
JP5564835B2 (ja) * | 2009-06-17 | 2014-08-06 | デクセリアルズ株式会社 | 光半導体封止用樹脂組成物 |
US8551686B2 (en) * | 2009-10-30 | 2013-10-08 | Az Electronic Materials Usa Corp. | Antireflective composition for photoresists |
JP5286236B2 (ja) | 2009-11-30 | 2013-09-11 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いて形成した膜及びそれを用いたパターン形成方法 |
US8507192B2 (en) * | 2010-02-18 | 2013-08-13 | Az Electronic Materials Usa Corp. | Antireflective compositions and methods of using same |
US8465902B2 (en) * | 2011-02-08 | 2013-06-18 | Az Electronic Materials Usa Corp. | Underlayer coating composition and processes thereof |
KR101804392B1 (ko) * | 2011-03-15 | 2017-12-04 | 닛산 가가쿠 고교 가부시키 가이샤 | 레지스트 하층막 형성 조성물 및 이를 이용한 레지스트 패턴의 형성 방법 |
EP2754681B1 (de) * | 2011-09-08 | 2018-01-03 | Nissan Chemical Industries, Ltd. | Polymer und zusammensetzung damit sowie klebstoffzusammensetzung |
JP5831388B2 (ja) * | 2011-10-25 | 2015-12-09 | 信越化学工業株式会社 | 変性ノボラック型フェノール樹脂の製造方法 |
US9170494B2 (en) | 2012-06-19 | 2015-10-27 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective compositions and methods of using same |
US8962374B2 (en) * | 2012-06-27 | 2015-02-24 | International Business Machines Corporation | Integration of a titania layer in an anti-reflective coating |
JP6196194B2 (ja) * | 2014-08-19 | 2017-09-13 | 信越化学工業株式会社 | 紫外線吸収剤、レジスト下層膜形成用組成物、及びパターン形成方法 |
KR101590608B1 (ko) * | 2015-08-12 | 2016-02-01 | 로움하이텍 주식회사 | 신규한 이소시아누레이트 화합물 및 이를 포함하는 반사방지막 조성물 |
JP6525376B2 (ja) * | 2015-08-31 | 2019-06-05 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | オーバーコートされたフォトレジストと共に使用するためのコーティング組成物 |
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CN109073978B (zh) * | 2016-05-02 | 2022-05-17 | 日产化学株式会社 | 包含特定交联剂的保护膜形成用组合物及使用了该组合物的图案形成方法 |
US11448964B2 (en) * | 2016-05-23 | 2022-09-20 | Rohm And Haas Electronic Materials Korea Ltd. | Coating compositions for use with an overcoated photoresist |
CN109416512A (zh) | 2016-07-15 | 2019-03-01 | 日产化学株式会社 | 包含具有乙内酰脲环的化合物的抗蚀剂下层膜形成用组合物 |
CN108395598B (zh) * | 2017-02-07 | 2020-06-09 | 中国石油化工股份有限公司 | 一种具有抗紫外老化性能的抗车辙剂及其制备方法 |
KR102487404B1 (ko) * | 2017-07-26 | 2023-01-12 | 에스케이이노베이션 주식회사 | 바닥반사 방지막 형성용 중합체 및 이를 포함하는 바닥반사 방지막 형성용 조성물 |
KR20200043312A (ko) * | 2017-08-24 | 2020-04-27 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성 조성물 |
JP2019065175A (ja) * | 2017-09-29 | 2019-04-25 | 東京応化工業株式会社 | 硬化性組成物、硬化膜、及び硬化物の製造方法 |
KR102414150B1 (ko) * | 2017-10-17 | 2022-06-29 | 에스케이이노베이션 주식회사 | 바닥반사방지막 형성용 중합체, 이를 포함하는 바닥반사방지막 형성용 조성물 및 이를 이용한 바닥반사방지막의 형성방법 |
US11500291B2 (en) * | 2017-10-31 | 2022-11-15 | Rohm And Haas Electronic Materials Korea Ltd. | Underlying coating compositions for use with photoresists |
KR20210024461A (ko) * | 2018-06-26 | 2021-03-05 | 닛산 가가쿠 가부시키가이샤 | 글리시딜에스테르 화합물과의 반응생성물을 포함하는 레지스트 하층막 형성 조성물 |
US11977333B2 (en) * | 2019-07-31 | 2024-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacturing |
JP2021042312A (ja) | 2019-09-11 | 2021-03-18 | キオクシア株式会社 | 化合物、ポリマー、パターン形成材料、パターン形成方法および半導体装置の製造方法 |
JP7368342B2 (ja) * | 2020-12-07 | 2023-10-24 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法 |
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-
2003
- 2003-10-08 EP EP03751376A patent/EP1560070B1/de not_active Expired - Lifetime
- 2003-10-08 DE DE60330798T patent/DE60330798D1/de not_active Expired - Lifetime
- 2003-10-08 US US10/530,349 patent/US7425399B2/en not_active Expired - Lifetime
- 2003-10-08 JP JP2005501017A patent/JP4171920B2/ja not_active Expired - Lifetime
- 2003-10-08 AU AU2003271123A patent/AU2003271123A1/en not_active Abandoned
- 2003-10-08 KR KR1020057006066A patent/KR101026127B1/ko active IP Right Grant
- 2003-10-08 WO PCT/JP2003/012875 patent/WO2004034148A1/ja active Application Filing
- 2003-10-09 TW TW092128174A patent/TWI280459B/zh not_active IP Right Cessation
-
2007
- 2007-11-02 US US11/979,448 patent/US7846638B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI280459B (en) | 2007-05-01 |
US20060290429A1 (en) | 2006-12-28 |
EP1560070A1 (de) | 2005-08-03 |
TW200413856A (en) | 2004-08-01 |
US7425399B2 (en) | 2008-09-16 |
EP1560070B1 (de) | 2009-12-30 |
JP4171920B2 (ja) | 2008-10-29 |
WO2004034148A1 (ja) | 2004-04-22 |
US20080206680A1 (en) | 2008-08-28 |
JPWO2004034148A1 (ja) | 2006-02-09 |
KR101026127B1 (ko) | 2011-04-05 |
AU2003271123A1 (en) | 2004-05-04 |
KR20050061523A (ko) | 2005-06-22 |
US7846638B2 (en) | 2010-12-07 |
EP1560070A4 (de) | 2006-02-08 |
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