DE60328960D1 - Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-Speicherzelle - Google Patents

Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-Speicherzelle

Info

Publication number
DE60328960D1
DE60328960D1 DE60328960T DE60328960T DE60328960D1 DE 60328960 D1 DE60328960 D1 DE 60328960D1 DE 60328960 T DE60328960 T DE 60328960T DE 60328960 T DE60328960 T DE 60328960T DE 60328960 D1 DE60328960 D1 DE 60328960D1
Authority
DE
Germany
Prior art keywords
memory cell
phase change
change memory
self
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60328960T
Other languages
English (en)
Inventor
Fabio Pellizzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Ovonyx Inc
Original Assignee
STMicroelectronics SRL
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, Ovonyx Inc filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60328960D1 publication Critical patent/DE60328960D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/32—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the bipolar type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
DE60328960T 2003-04-16 2003-04-16 Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-Speicherzelle Expired - Lifetime DE60328960D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03425235A EP1469532B1 (de) 2003-04-16 2003-04-16 Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-Speicherzelle

Publications (1)

Publication Number Publication Date
DE60328960D1 true DE60328960D1 (de) 2009-10-08

Family

ID=32893028

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60328960T Expired - Lifetime DE60328960D1 (de) 2003-04-16 2003-04-16 Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-Speicherzelle

Country Status (3)

Country Link
US (1) US7244956B2 (de)
EP (1) EP1469532B1 (de)
DE (1) DE60328960D1 (de)

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DE102004059428A1 (de) 2004-12-09 2006-06-22 Infineon Technologies Ag Herstellungsverfahren für eine mikroelektronische Elektrodenstruktur, insbesondere für ein PCM-Speicherelement, und entsprechende mikroelektronische Elektrodenstruktur
US20060177977A1 (en) * 2005-02-08 2006-08-10 The Hong Kong University Of Science And Technology Method for patterning fins and gates in a FinFET device using trimmed hard-mask capped with imaging layer
DE102005014645B4 (de) * 2005-03-31 2007-07-26 Infineon Technologies Ag Anschlusselektrode für Phasen-Wechsel-Material, zugehöriges Phasen-Wechsel-Speicherelement sowie zugehöriges Herstellungsverfahren
US7488967B2 (en) * 2005-04-06 2009-02-10 International Business Machines Corporation Structure for confining the switching current in phase memory (PCM) cells
US7166533B2 (en) 2005-04-08 2007-01-23 Infineon Technologies, Ag Phase change memory cell defined by a pattern shrink material process
EP1729355B1 (de) * 2005-06-03 2008-11-19 STMicroelectronics S.r.l. Selbstjustiertes Verfahren zur Herstellung von Phasenwechselspeicherzellen
US20060273297A1 (en) * 2005-06-07 2006-12-07 Thomas Happ Phase change memory cell having ring contacts
US20070045606A1 (en) * 2005-08-30 2007-03-01 Michele Magistretti Shaping a phase change layer in a phase change memory cell
TWI264087B (en) * 2005-12-21 2006-10-11 Ind Tech Res Inst Phase change memory cell and fabricating method thereof
US7606056B2 (en) * 2005-12-22 2009-10-20 Stmicroelectronics S.R.L. Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured
TWI345827B (en) * 2007-01-10 2011-07-21 Nanya Technology Corp Phase change memory device and method of fabricating the same
US7728405B2 (en) 2007-03-08 2010-06-01 Qimonda Ag Carbon memory
TWI419321B (zh) * 2007-04-03 2013-12-11 Marvell World Trade Ltd 記憶體裝置及其製造方法
US7985616B1 (en) * 2007-04-05 2011-07-26 Marvell International Ltd. Methods to form wide heater trenches and to form memory cells to engage heaters
US7687309B2 (en) 2007-06-28 2010-03-30 International Business Machines Corporation CMOS-process-compatible programmable via device
WO2009001261A1 (en) 2007-06-28 2008-12-31 Nxp B.V. An electronic device, and a method of manufacturing an electronic device
US7772582B2 (en) * 2007-07-11 2010-08-10 International Business Machines Corporation Four-terminal reconfigurable devices
KR20090013419A (ko) * 2007-08-01 2009-02-05 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
US7659534B2 (en) * 2007-08-03 2010-02-09 International Business Machines Corporation Programmable via devices with air gap isolation
US7969770B2 (en) * 2007-08-03 2011-06-28 International Business Machines Corporation Programmable via devices in back end of line level
US20090146131A1 (en) * 2007-12-05 2009-06-11 Thomas Happ Integrated Circuit, and Method for Manufacturing an Integrated Circuit
US8049197B2 (en) * 2008-12-30 2011-11-01 Stmicroelectronics S.R.L. Self-aligned nano-cross-point phase change memory
KR20110035783A (ko) * 2009-09-30 2011-04-06 주식회사 하이닉스반도체 상변화 메모리 소자 제조 방법
KR101097440B1 (ko) * 2009-12-16 2011-12-23 주식회사 하이닉스반도체 크로스 패터닝 기법을 이용한 상변화 메모리 장치의 제조방법
US9431604B2 (en) 2012-12-14 2016-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Resistive random access memory (RRAM) and method of making
KR102028086B1 (ko) 2013-03-04 2019-10-04 삼성전자주식회사 메모리소자 및 이를 포함하는 장치
FR3096827A1 (fr) 2019-05-28 2020-12-04 Stmicroelectronics (Crolles 2) Sas Mémoire à changement de phase

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US6972430B2 (en) * 2002-02-20 2005-12-06 Stmicroelectronics S.R.L. Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
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Also Published As

Publication number Publication date
EP1469532A1 (de) 2004-10-20
EP1469532B1 (de) 2009-08-26
US20050001284A1 (en) 2005-01-06
US20070057341A9 (en) 2007-03-15
US7244956B2 (en) 2007-07-17

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: STMICROELECTRONICS S.R.L., AGRATE BRIANZA, MAI, IT

Owner name: OVONYX INC., ROCHESTER HILLS, MICH., US

8328 Change in the person/name/address of the agent

Representative=s name: KLUNKER, SCHMITT-NILSON, HIRSCH, 80796 MUENCHEN

8328 Change in the person/name/address of the agent

Representative=s name: DERZEIT KEIN VERTRETER BESTELLT

8364 No opposition during term of opposition