DE60226839D1 - Phasenwechsel-Speicherzelle sowie deren Herstellungsverfahren mittels Minigräben - Google Patents
Phasenwechsel-Speicherzelle sowie deren Herstellungsverfahren mittels MinigräbenInfo
- Publication number
- DE60226839D1 DE60226839D1 DE60226839T DE60226839T DE60226839D1 DE 60226839 D1 DE60226839 D1 DE 60226839D1 DE 60226839 T DE60226839 T DE 60226839T DE 60226839 T DE60226839 T DE 60226839T DE 60226839 D1 DE60226839 D1 DE 60226839D1
- Authority
- DE
- Germany
- Prior art keywords
- minigrams
- memory cell
- production method
- phase change
- change memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
- H10B63/32—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the bipolar type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02425087A EP1339110B1 (de) | 2002-02-20 | 2002-02-20 | Phasenwechsel-Speicherzelle sowie deren Herstellungsverfahren mittels Minigräben |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60226839D1 true DE60226839D1 (de) | 2008-07-10 |
Family
ID=27635928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60226839T Expired - Lifetime DE60226839D1 (de) | 2002-02-20 | 2002-02-20 | Phasenwechsel-Speicherzelle sowie deren Herstellungsverfahren mittels Minigräben |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP1339110B1 (de) |
DE (1) | DE60226839D1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10297692B4 (de) * | 2002-08-14 | 2010-11-25 | Intel Corporation, Santa Clara | Geräte und Systeme mit Haftmaterial für programmierbare Vorrichtungen, sowie Verfahren zur Herstellung |
KR100448893B1 (ko) * | 2002-08-23 | 2004-09-16 | 삼성전자주식회사 | 상전이 기억 소자 구조 및 그 제조 방법 |
KR100481865B1 (ko) | 2002-11-01 | 2005-04-11 | 삼성전자주식회사 | 상변환 기억소자 및 그 제조방법 |
DE60328960D1 (de) * | 2003-04-16 | 2009-10-08 | St Microelectronics Srl | Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-Speicherzelle |
EP1557875A1 (de) * | 2003-12-29 | 2005-07-27 | STMicroelectronics S.r.l. | Verfahren zur Bildung von Gräben mit abgeschrägtem Profil in einem dielektrischen Material |
DE102004019862A1 (de) * | 2004-04-23 | 2005-11-17 | Infineon Technologies Ag | Sublithographische Kontaktstruktur in einem Halbleiterbauelement |
DE102004031742A1 (de) * | 2004-06-30 | 2006-01-19 | Infineon Technologies Ag | Verfahren zur Herstellung einer sublithographischen Kontaktstruktur in einem Halbleiterbauelement |
EP1710850B1 (de) | 2005-04-08 | 2010-01-06 | STMicroelectronics S.r.l. | Lateraler Phasenwechselspeicher |
EP1764847B1 (de) * | 2005-09-14 | 2008-12-24 | STMicroelectronics S.r.l. | Ringförmiger Heizer für eine Phasenübergangsspeichervorrichtung |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6031287A (en) * | 1997-06-18 | 2000-02-29 | Micron Technology, Inc. | Contact structure and memory element incorporating the same |
WO2000057498A1 (en) * | 1999-03-25 | 2000-09-28 | Energy Conversion Devices, Inc. | Electrically programmable memory element with improved contacts |
WO2002009206A1 (en) * | 2000-07-22 | 2002-01-31 | Ovonyx, Inc. | Electrically programmable memory element |
-
2002
- 2002-02-20 EP EP02425087A patent/EP1339110B1/de not_active Expired - Lifetime
- 2002-02-20 DE DE60226839T patent/DE60226839D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1339110A1 (de) | 2003-08-27 |
EP1339110A9 (de) | 2004-01-28 |
EP1339110B1 (de) | 2008-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |