DE60328302D1 - Zusammensetzung zum bilden eines siliziumfilms und verfahren zum bilden eines siliziumfilms - Google Patents
Zusammensetzung zum bilden eines siliziumfilms und verfahren zum bilden eines siliziumfilmsInfo
- Publication number
- DE60328302D1 DE60328302D1 DE60328302T DE60328302T DE60328302D1 DE 60328302 D1 DE60328302 D1 DE 60328302D1 DE 60328302 T DE60328302 T DE 60328302T DE 60328302 T DE60328302 T DE 60328302T DE 60328302 D1 DE60328302 D1 DE 60328302D1
- Authority
- DE
- Germany
- Prior art keywords
- making
- silicon film
- composition
- silicon
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 2
- 229910052710 silicon Inorganic materials 0.000 title 2
- 239000010703 silicon Substances 0.000 title 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
- C23C24/10—Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
- C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/005—Epitaxial layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Silicon Compounds (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002243004A JP4016419B2 (ja) | 2002-08-23 | 2002-08-23 | シリコン膜形成用組成物およびシリコン膜の形成方法 |
JP2002376019A JP2004204094A (ja) | 2002-12-26 | 2002-12-26 | シリコン膜形成用組成物およびシリコン膜の形成方法 |
PCT/JP2003/010380 WO2004019393A1 (ja) | 2002-08-23 | 2003-08-15 | シリコン膜形成用組成物およびシリコン膜の形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60328302D1 true DE60328302D1 (de) | 2009-08-20 |
Family
ID=31949569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60328302T Expired - Lifetime DE60328302D1 (de) | 2002-08-23 | 2003-08-15 | Zusammensetzung zum bilden eines siliziumfilms und verfahren zum bilden eines siliziumfilms |
Country Status (8)
Country | Link |
---|---|
US (1) | US7473443B2 (de) |
EP (1) | EP1551057B1 (de) |
KR (1) | KR20050026692A (de) |
CN (1) | CN100423197C (de) |
AU (1) | AU2003262236A1 (de) |
DE (1) | DE60328302D1 (de) |
TW (1) | TW200418724A (de) |
WO (1) | WO2004019393A1 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8568684B2 (en) | 2000-10-17 | 2013-10-29 | Nanogram Corporation | Methods for synthesizing submicron doped silicon particles |
US20090075083A1 (en) | 1997-07-21 | 2009-03-19 | Nanogram Corporation | Nanoparticle production and corresponding structures |
US6599631B2 (en) | 2001-01-26 | 2003-07-29 | Nanogram Corporation | Polymer-inorganic particle composites |
US7226966B2 (en) | 2001-08-03 | 2007-06-05 | Nanogram Corporation | Structures incorporating polymer-inorganic particle blends |
KR100627203B1 (ko) * | 2001-08-14 | 2006-09-22 | 제이에스알 가부시끼가이샤 | 실란 조성물, 실리콘막의 형성법 및 태양 전지의 제조법 |
US7879696B2 (en) * | 2003-07-08 | 2011-02-01 | Kovio, Inc. | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
US7276385B1 (en) | 2003-11-24 | 2007-10-02 | Kovio, Inc. | Methods of laser repairing a circuit, compositions and equipment for such methods, and structures formed from such methods |
US7294449B1 (en) | 2003-12-31 | 2007-11-13 | Kovio, Inc. | Radiation patternable functional materials, methods of their use, and structures formed therefrom |
EP1780778A4 (de) * | 2004-07-16 | 2009-06-03 | Univ Tohoku | Entwicklerflüssigkeit für ein halbleiterbauelement, entwicklungsverfahren und vorrichtung zum herstellen von halbleitern |
US7485691B1 (en) | 2004-10-08 | 2009-02-03 | Kovio, Inc | Polysilane compositions, methods for their synthesis and films formed therefrom |
JP5888831B2 (ja) * | 2005-10-05 | 2016-03-22 | シン フィルム エレクトロニクス エーエスエー | 架橋済みポリマー及びその製造方法 |
JP5550903B2 (ja) * | 2006-07-07 | 2014-07-16 | シリカ テック リミテッド ライアビリティ カンパニー | 多結晶シリコンを作製するためのプラズマ堆積装置及び方法 |
US7709307B2 (en) * | 2006-08-24 | 2010-05-04 | Kovio, Inc. | Printed non-volatile memory |
EP2087529A2 (de) * | 2006-11-15 | 2009-08-12 | Innovalight, Inc. | Verfahren zur herstellung eines verdichteten nanopartikel-dünnfilms mit einem satz verstopfter poren |
WO2008067391A2 (en) * | 2006-11-28 | 2008-06-05 | Cima Nano Tech Israel Ltd. | Process for producing ultra-fine powder of crystalline silicon |
EP2089897A2 (de) * | 2006-12-07 | 2009-08-19 | Innovalight, Inc. | Verfahren zur erzeugung einer verdichteten gruppe-iv-halbleiter-nanopartikeldünnschicht |
US20080171425A1 (en) * | 2006-12-13 | 2008-07-17 | Dmitry Poplavskyy | Methods of forming an epitaxial layer on a group iv semiconductor substrate |
WO2008079242A1 (en) * | 2006-12-19 | 2008-07-03 | Nanogram Corporation | Hollow silica nanoparticles as well as synthesis processes and applications thereof |
US7718707B2 (en) | 2006-12-21 | 2010-05-18 | Innovalight, Inc. | Method for preparing nanoparticle thin films |
JP5710879B2 (ja) * | 2007-01-03 | 2015-04-30 | ナノグラム・コーポレイションNanoGram Corporation | シリコン/ゲルマニウムによるナノ粒子インク、ドーピングされた粒子、印刷法、及び半導体用途のためのプロセス |
US8968438B2 (en) | 2007-07-10 | 2015-03-03 | Innovalight, Inc. | Methods and apparatus for the in situ collection of nucleated particles |
DE102007050288A1 (de) * | 2007-10-18 | 2009-04-23 | Otto Hauser | Halbleiterbauteil |
US7851336B2 (en) | 2008-03-13 | 2010-12-14 | Innovalight, Inc. | Method of forming a passivated densified nanoparticle thin film on a substrate |
US8247312B2 (en) | 2008-04-24 | 2012-08-21 | Innovalight, Inc. | Methods for printing an ink on a textured wafer surface |
US8500844B2 (en) | 2008-05-09 | 2013-08-06 | Cima Nanotech Israel Ltd. | Process for producing powders of germanium |
JP5519649B2 (ja) * | 2008-05-29 | 2014-06-11 | エヌディーエスユー リサーチ ファウンデーション | 官能化されたシランの形成法 |
CN102668115B (zh) * | 2009-09-21 | 2015-11-25 | 纳克公司 | 用于薄膜太阳能电池形成的硅墨水、对应方法和太阳能电池结构 |
GB0919830D0 (en) * | 2009-11-12 | 2009-12-30 | Isis Innovation | Preparation of silicon for fast generation of hydrogen through reaction with water |
KR20110077924A (ko) * | 2009-12-30 | 2011-07-07 | 삼성전자주식회사 | 태양 전지 및 이의 제조 방법 |
EP2528864B1 (de) | 2010-01-28 | 2017-03-29 | Ndsu Research Foundation | Verfahren zur herstellung von cyclohexasilanverbindungen |
US8895962B2 (en) | 2010-06-29 | 2014-11-25 | Nanogram Corporation | Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods |
DE102010037278A1 (de) * | 2010-09-02 | 2012-03-08 | Hans Freitag | Verfahren zum Herstellen von Silizium-basierenden Schichten oder Silizium-basierenden Strukturen unter Verwendung von Silizium-enthaltenden Tinten |
KR101411726B1 (ko) | 2010-12-10 | 2014-06-26 | 데이진 가부시키가이샤 | 반도체 적층체, 반도체 디바이스, 및 그들의 제조 방법 |
US8912083B2 (en) | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
JP2012196651A (ja) * | 2011-03-23 | 2012-10-18 | Panasonic Corp | 静電霧化装置及びその製造方法 |
CA2752844A1 (en) * | 2011-09-19 | 2013-03-19 | Hydro-Quebec | Method for preparing a particulate of si or siox-based anode material, and material thus obtained |
DE102011085078A1 (de) * | 2011-10-24 | 2013-04-25 | Siemens Ag | Verfahren zur Herstellung einer Siliziumschicht auf einem Substrat |
CN104205293B (zh) * | 2012-03-30 | 2017-09-12 | 帝人株式会社 | 半导体装置的制造方法 |
KR102031961B1 (ko) * | 2012-07-05 | 2019-10-14 | 한국전자통신연구원 | 금속-절연체 전이 금속을 이용하는 열전소자 |
US9178126B2 (en) * | 2012-07-05 | 2015-11-03 | Electronics And Telecommunications Research Institute | Thermoelectric elements using metal-insulator transition material |
EP3001438B1 (de) | 2012-07-20 | 2022-03-16 | Asahi Kasei Kabushiki Kaisha | Solarzelle und ihr herstellungsverfahren |
GB201217525D0 (en) | 2012-10-01 | 2012-11-14 | Isis Innovation | Composition for hydrogen generation |
KR101958056B1 (ko) | 2013-05-24 | 2019-03-13 | 데이진 가부시키가이샤 | 고점도 알콜 용매 및 실리콘/게르마늄계 나노입자를 포함하는 인쇄용 잉크 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5515808B2 (de) * | 1972-09-11 | 1980-04-26 | ||
DE3016807A1 (de) * | 1980-05-02 | 1981-11-05 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung von silizium |
GB2077710B (en) | 1980-06-11 | 1983-10-12 | Nat Res Dev | Synthesising a polysilane |
DE3536743C2 (de) * | 1985-10-15 | 1994-11-10 | Siemens Ag | Verfahren zum Herstellung von großflächigen Siliziumkristallkörpern für Solarzellen |
JPS6429661A (en) | 1987-07-24 | 1989-01-31 | Mikuni Kogyo Kk | Air-fuel mixture feeder |
JPH0834177B2 (ja) | 1987-10-23 | 1996-03-29 | 三菱電機株式会社 | 半導体多結晶薄膜の製造方法 |
JPH06116704A (ja) * | 1992-10-01 | 1994-04-26 | Sansha Electric Mfg Co Ltd | シリコン皮膜の形成方法 |
JP3517934B2 (ja) | 1994-03-24 | 2004-04-12 | 昭和電工株式会社 | シリコン膜の形成方法 |
US5866471A (en) * | 1995-12-26 | 1999-02-02 | Kabushiki Kaisha Toshiba | Method of forming semiconductor thin film and method of fabricating solar cell |
JP3472041B2 (ja) * | 1996-07-29 | 2003-12-02 | シャープ株式会社 | シリコン系微粒子の製造方法及びその方法により製造されたシリコン系微粒子を用いた薄膜形成方法 |
JPH11260721A (ja) * | 1998-03-13 | 1999-09-24 | Toshiba Corp | 多結晶薄膜シリコン層の形成方法および太陽光発電素子 |
WO2000058409A1 (fr) * | 1999-03-30 | 2000-10-05 | Jsr Corporation | Composition pour revetement |
KR100436319B1 (ko) | 1999-03-30 | 2004-06-18 | 제이에스알 가부시끼가이샤 | 실리콘 막의 형성방법 |
JP4399935B2 (ja) | 1999-12-24 | 2010-01-20 | ウシオ電機株式会社 | 閃光放電ランプ、およびその発光装置 |
EP1134224B1 (de) * | 2000-03-13 | 2007-05-30 | JSR Corporation | Cyclosilan, eine flüssige Zusammensetzung und ein Verfahren zur Bildung eines Silicium-Films |
JP4462394B2 (ja) * | 2000-04-19 | 2010-05-12 | Jsr株式会社 | シリコン膜のパターン形成方法 |
KR100627203B1 (ko) | 2001-08-14 | 2006-09-22 | 제이에스알 가부시끼가이샤 | 실란 조성물, 실리콘막의 형성법 및 태양 전지의 제조법 |
-
2003
- 2003-08-15 EP EP03792692A patent/EP1551057B1/de not_active Expired - Fee Related
- 2003-08-15 DE DE60328302T patent/DE60328302D1/de not_active Expired - Lifetime
- 2003-08-15 KR KR1020047005943A patent/KR20050026692A/ko not_active Application Discontinuation
- 2003-08-15 CN CNB038014351A patent/CN100423197C/zh not_active Expired - Fee Related
- 2003-08-15 AU AU2003262236A patent/AU2003262236A1/en not_active Abandoned
- 2003-08-15 US US10/515,728 patent/US7473443B2/en not_active Expired - Fee Related
- 2003-08-15 WO PCT/JP2003/010380 patent/WO2004019393A1/ja active Application Filing
- 2003-08-22 TW TW092123202A patent/TW200418724A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN100423197C (zh) | 2008-10-01 |
US20050145163A1 (en) | 2005-07-07 |
US7473443B2 (en) | 2009-01-06 |
KR20050026692A (ko) | 2005-03-15 |
EP1551057A1 (de) | 2005-07-06 |
CN1579012A (zh) | 2005-02-09 |
TW200418724A (en) | 2004-10-01 |
WO2004019393A1 (ja) | 2004-03-04 |
TWI307678B (de) | 2009-03-21 |
AU2003262236A1 (en) | 2004-03-11 |
EP1551057B1 (de) | 2009-07-08 |
EP1551057A4 (de) | 2006-03-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |