DE60328302D1 - Zusammensetzung zum bilden eines siliziumfilms und verfahren zum bilden eines siliziumfilms - Google Patents

Zusammensetzung zum bilden eines siliziumfilms und verfahren zum bilden eines siliziumfilms

Info

Publication number
DE60328302D1
DE60328302D1 DE60328302T DE60328302T DE60328302D1 DE 60328302 D1 DE60328302 D1 DE 60328302D1 DE 60328302 T DE60328302 T DE 60328302T DE 60328302 T DE60328302 T DE 60328302T DE 60328302 D1 DE60328302 D1 DE 60328302D1
Authority
DE
Germany
Prior art keywords
making
silicon film
composition
silicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60328302T
Other languages
English (en)
Inventor
Yasuo Matsuki
Haruo Iwasawa
Hitoshi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002243004A external-priority patent/JP4016419B2/ja
Priority claimed from JP2002376019A external-priority patent/JP2004204094A/ja
Application filed by JSR Corp filed Critical JSR Corp
Application granted granted Critical
Publication of DE60328302D1 publication Critical patent/DE60328302D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/10—Coating starting from inorganic powder by application of heat or pressure and heat with intermediate formation of a liquid phase in the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Silicon Compounds (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE60328302T 2002-08-23 2003-08-15 Zusammensetzung zum bilden eines siliziumfilms und verfahren zum bilden eines siliziumfilms Expired - Lifetime DE60328302D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002243004A JP4016419B2 (ja) 2002-08-23 2002-08-23 シリコン膜形成用組成物およびシリコン膜の形成方法
JP2002376019A JP2004204094A (ja) 2002-12-26 2002-12-26 シリコン膜形成用組成物およびシリコン膜の形成方法
PCT/JP2003/010380 WO2004019393A1 (ja) 2002-08-23 2003-08-15 シリコン膜形成用組成物およびシリコン膜の形成方法

Publications (1)

Publication Number Publication Date
DE60328302D1 true DE60328302D1 (de) 2009-08-20

Family

ID=31949569

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60328302T Expired - Lifetime DE60328302D1 (de) 2002-08-23 2003-08-15 Zusammensetzung zum bilden eines siliziumfilms und verfahren zum bilden eines siliziumfilms

Country Status (8)

Country Link
US (1) US7473443B2 (de)
EP (1) EP1551057B1 (de)
KR (1) KR20050026692A (de)
CN (1) CN100423197C (de)
AU (1) AU2003262236A1 (de)
DE (1) DE60328302D1 (de)
TW (1) TW200418724A (de)
WO (1) WO2004019393A1 (de)

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US6599631B2 (en) 2001-01-26 2003-07-29 Nanogram Corporation Polymer-inorganic particle composites
US7226966B2 (en) 2001-08-03 2007-06-05 Nanogram Corporation Structures incorporating polymer-inorganic particle blends
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US7879696B2 (en) * 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7276385B1 (en) 2003-11-24 2007-10-02 Kovio, Inc. Methods of laser repairing a circuit, compositions and equipment for such methods, and structures formed from such methods
US7294449B1 (en) 2003-12-31 2007-11-13 Kovio, Inc. Radiation patternable functional materials, methods of their use, and structures formed therefrom
EP1780778A4 (de) * 2004-07-16 2009-06-03 Univ Tohoku Entwicklerflüssigkeit für ein halbleiterbauelement, entwicklungsverfahren und vorrichtung zum herstellen von halbleitern
US7485691B1 (en) 2004-10-08 2009-02-03 Kovio, Inc Polysilane compositions, methods for their synthesis and films formed therefrom
JP5888831B2 (ja) * 2005-10-05 2016-03-22 シン フィルム エレクトロニクス エーエスエー 架橋済みポリマー及びその製造方法
JP5550903B2 (ja) * 2006-07-07 2014-07-16 シリカ テック リミテッド ライアビリティ カンパニー 多結晶シリコンを作製するためのプラズマ堆積装置及び方法
US7709307B2 (en) * 2006-08-24 2010-05-04 Kovio, Inc. Printed non-volatile memory
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WO2008067391A2 (en) * 2006-11-28 2008-06-05 Cima Nano Tech Israel Ltd. Process for producing ultra-fine powder of crystalline silicon
EP2089897A2 (de) * 2006-12-07 2009-08-19 Innovalight, Inc. Verfahren zur erzeugung einer verdichteten gruppe-iv-halbleiter-nanopartikeldünnschicht
US20080171425A1 (en) * 2006-12-13 2008-07-17 Dmitry Poplavskyy Methods of forming an epitaxial layer on a group iv semiconductor substrate
WO2008079242A1 (en) * 2006-12-19 2008-07-03 Nanogram Corporation Hollow silica nanoparticles as well as synthesis processes and applications thereof
US7718707B2 (en) 2006-12-21 2010-05-18 Innovalight, Inc. Method for preparing nanoparticle thin films
JP5710879B2 (ja) * 2007-01-03 2015-04-30 ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ シリコン／ゲルマニウムによるナノ粒子インク、ドーピングされた粒子、印刷法、及び半導体用途のためのプロセス
US8968438B2 (en) 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
DE102007050288A1 (de) * 2007-10-18 2009-04-23 Otto Hauser Halbleiterbauteil
US7851336B2 (en) 2008-03-13 2010-12-14 Innovalight, Inc. Method of forming a passivated densified nanoparticle thin film on a substrate
US8247312B2 (en) 2008-04-24 2012-08-21 Innovalight, Inc. Methods for printing an ink on a textured wafer surface
US8500844B2 (en) 2008-05-09 2013-08-06 Cima Nanotech Israel Ltd. Process for producing powders of germanium
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CN102668115B (zh) * 2009-09-21 2015-11-25 纳克公司 用于薄膜太阳能电池形成的硅墨水、对应方法和太阳能电池结构
GB0919830D0 (en) * 2009-11-12 2009-12-30 Isis Innovation Preparation of silicon for fast generation of hydrogen through reaction with water
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Also Published As

Publication number Publication date
CN100423197C (zh) 2008-10-01
US20050145163A1 (en) 2005-07-07
US7473443B2 (en) 2009-01-06
KR20050026692A (ko) 2005-03-15
EP1551057A1 (de) 2005-07-06
CN1579012A (zh) 2005-02-09
TW200418724A (en) 2004-10-01
WO2004019393A1 (ja) 2004-03-04
TWI307678B (de) 2009-03-21
AU2003262236A1 (en) 2004-03-11
EP1551057B1 (de) 2009-07-08
EP1551057A4 (de) 2006-03-22

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