DE60025991D1 - Verfahren zum Bilden eines Bauelement-Isolationsgebietes - Google Patents
Verfahren zum Bilden eines Bauelement-IsolationsgebietesInfo
- Publication number
- DE60025991D1 DE60025991D1 DE60025991T DE60025991T DE60025991D1 DE 60025991 D1 DE60025991 D1 DE 60025991D1 DE 60025991 T DE60025991 T DE 60025991T DE 60025991 T DE60025991 T DE 60025991T DE 60025991 D1 DE60025991 D1 DE 60025991D1
- Authority
- DE
- Germany
- Prior art keywords
- forming
- isolation region
- device isolation
- region
- isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
- H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Local Oxidation Of Silicon (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12109599 | 1999-04-28 | ||
JP12109599A JP3566880B2 (ja) | 1999-04-28 | 1999-04-28 | 素子分離領域の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60025991D1 true DE60025991D1 (de) | 2006-04-20 |
DE60025991T2 DE60025991T2 (de) | 2006-10-19 |
Family
ID=14802763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60025991T Expired - Lifetime DE60025991T2 (de) | 1999-04-28 | 2000-04-28 | Verfahren zum Bilden eines Bauelement-Isolationsgebiets |
Country Status (6)
Country | Link |
---|---|
US (1) | US6323107B1 (de) |
EP (1) | EP1049154B1 (de) |
JP (1) | JP3566880B2 (de) |
KR (1) | KR100367051B1 (de) |
DE (1) | DE60025991T2 (de) |
TW (1) | TW473907B (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7289174B1 (en) | 1995-07-17 | 2007-10-30 | Seiko Epson Corporation | Reflective type color liquid crystal device and an electronic apparatus using this |
JP3702162B2 (ja) * | 2000-09-25 | 2005-10-05 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2003100860A (ja) | 2001-09-27 | 2003-04-04 | Toshiba Corp | 半導体装置 |
WO2003043078A2 (en) * | 2001-11-13 | 2003-05-22 | Advanced Micro Devices, Inc. | Preferential corner rounding of trench structures using post-fill oxidation |
KR100426485B1 (ko) * | 2001-12-22 | 2004-04-14 | 주식회사 하이닉스반도체 | 플래쉬 메모리 셀의 제조 방법 |
US7439141B2 (en) * | 2001-12-27 | 2008-10-21 | Spansion, Llc | Shallow trench isolation approach for improved STI corner rounding |
US6890831B2 (en) * | 2002-06-03 | 2005-05-10 | Sanyo Electric Co., Ltd. | Method of fabricating semiconductor device |
KR100466189B1 (ko) * | 2002-06-04 | 2005-01-13 | 주식회사 하이닉스반도체 | 플래시 메모리 셀의 제조 방법 |
KR100475081B1 (ko) * | 2002-07-09 | 2005-03-10 | 삼성전자주식회사 | Sonos형 eeprom 및 그 제조방법 |
JP2004095886A (ja) * | 2002-08-30 | 2004-03-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US20040065937A1 (en) * | 2002-10-07 | 2004-04-08 | Chia-Shun Hsiao | Floating gate memory structures and fabrication methods |
US7812375B2 (en) * | 2003-05-28 | 2010-10-12 | Samsung Electronics Co., Ltd. | Non-volatile memory device and method of fabricating the same |
KR100843244B1 (ko) | 2007-04-19 | 2008-07-02 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
KR100719366B1 (ko) * | 2005-06-15 | 2007-05-17 | 삼성전자주식회사 | 트렌치 소자분리막을 갖는 반도체 소자의 형성 방법 |
US20070262963A1 (en) * | 2006-05-11 | 2007-11-15 | Cypress Semiconductor Corporation | Apparatus and method for recognizing a button operation on a sensing device |
JP2008103420A (ja) * | 2006-10-17 | 2008-05-01 | Elpida Memory Inc | 半導体装置の製造方法 |
US9006079B2 (en) * | 2012-10-19 | 2015-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for forming semiconductor fins with reduced widths |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5258332A (en) * | 1987-08-28 | 1993-11-02 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor devices including rounding of corner portions by etching |
KR970053470A (ko) * | 1995-12-29 | 1997-07-31 | 김주용 | 반도체소자의 소자분리막 제조방법 |
JP3414590B2 (ja) * | 1996-06-20 | 2003-06-09 | 株式会社東芝 | 半導体装置の製造方法 |
US5834358A (en) * | 1996-11-12 | 1998-11-10 | Micron Technology, Inc. | Isolation regions and methods of forming isolation regions |
US5863827A (en) * | 1997-06-03 | 1999-01-26 | Texas Instruments Incorporated | Oxide deglaze before sidewall oxidation of mesa or trench |
US5880004A (en) * | 1997-06-10 | 1999-03-09 | Winbond Electronics Corp. | Trench isolation process |
US6103635A (en) * | 1997-10-28 | 2000-08-15 | Fairchild Semiconductor Corp. | Trench forming process and integrated circuit device including a trench |
US6054343A (en) * | 1998-01-26 | 2000-04-25 | Texas Instruments Incorporated | Nitride trench fill process for increasing shallow trench isolation (STI) robustness |
US6074932A (en) * | 1998-01-28 | 2000-06-13 | Texas Instruments - Acer Incorporated | Method for forming a stress-free shallow trench isolation |
-
1999
- 1999-04-28 JP JP12109599A patent/JP3566880B2/ja not_active Expired - Fee Related
-
2000
- 2000-04-11 US US09/547,105 patent/US6323107B1/en not_active Expired - Fee Related
- 2000-04-13 TW TW089106881A patent/TW473907B/zh not_active IP Right Cessation
- 2000-04-26 KR KR10-2000-0022121A patent/KR100367051B1/ko not_active IP Right Cessation
- 2000-04-28 EP EP00303599A patent/EP1049154B1/de not_active Expired - Lifetime
- 2000-04-28 DE DE60025991T patent/DE60025991T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2000311938A (ja) | 2000-11-07 |
EP1049154A3 (de) | 2002-12-18 |
TW473907B (en) | 2002-01-21 |
EP1049154A2 (de) | 2000-11-02 |
KR20000071817A (ko) | 2000-11-25 |
KR100367051B1 (ko) | 2003-01-09 |
JP3566880B2 (ja) | 2004-09-15 |
US6323107B1 (en) | 2001-11-27 |
DE60025991T2 (de) | 2006-10-19 |
EP1049154B1 (de) | 2006-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |