DE60328069D1 - Test-Photomaske, Streulichtbewertungsverfahren, und Streulichtkompensierungsverfahren - Google Patents

Test-Photomaske, Streulichtbewertungsverfahren, und Streulichtkompensierungsverfahren

Info

Publication number
DE60328069D1
DE60328069D1 DE60328069T DE60328069T DE60328069D1 DE 60328069 D1 DE60328069 D1 DE 60328069D1 DE 60328069 T DE60328069 T DE 60328069T DE 60328069 T DE60328069 T DE 60328069T DE 60328069 D1 DE60328069 D1 DE 60328069D1
Authority
DE
Germany
Prior art keywords
scattered light
test photomask
evaluation method
compensation method
light compensation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60328069T
Other languages
English (en)
Inventor
Teruyoshi Yao
Isamu Hanyu
Katsuyoshi Kirikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Application granted granted Critical
Publication of DE60328069D1 publication Critical patent/DE60328069D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE60328069T 2002-07-31 2003-04-08 Test-Photomaske, Streulichtbewertungsverfahren, und Streulichtkompensierungsverfahren Expired - Lifetime DE60328069D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002223966A JP4051240B2 (ja) 2002-07-31 2002-07-31 試験用フォトマスク、フレア評価方法、及びフレア補正方法

Publications (1)

Publication Number Publication Date
DE60328069D1 true DE60328069D1 (de) 2009-08-06

Family

ID=30112969

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60328069T Expired - Lifetime DE60328069D1 (de) 2002-07-31 2003-04-08 Test-Photomaske, Streulichtbewertungsverfahren, und Streulichtkompensierungsverfahren

Country Status (7)

Country Link
US (1) US6986973B2 (de)
EP (1) EP1387219B1 (de)
JP (1) JP4051240B2 (de)
KR (1) KR100870333B1 (de)
CN (1) CN1261994C (de)
DE (1) DE60328069D1 (de)
TW (1) TWI225282B (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4051240B2 (ja) * 2002-07-31 2008-02-20 富士通株式会社 試験用フォトマスク、フレア評価方法、及びフレア補正方法
JP3939670B2 (ja) * 2003-03-26 2007-07-04 シャープ株式会社 フレア測定用フォトマスク対、フレア測定機構、及び、フレア測定方法
JPWO2005008754A1 (ja) * 2003-07-18 2007-09-20 株式会社ニコン フレア計測方法、露光方法、及びフレア計測用のマスク
WO2005015313A1 (en) * 2003-08-04 2005-02-17 Carl Zeiss Smt Ag Illumination mask for range-resolved detection of scattered light
JP4084312B2 (ja) * 2004-01-16 2008-04-30 株式会社東芝 リソグラフィプロセス評価システム、リソグラフィプロセス評価方法、露光装置評価方法、マスクパターン設計方法及び半導体装置の製造方法
US7234130B2 (en) * 2004-02-25 2007-06-19 James Word Long range corrections in integrated circuit layout designs
JP4371891B2 (ja) * 2004-04-20 2009-11-25 株式会社東芝 パターン形成プロセスの評価方法及び評価用フォトマスク又はフォトマスクセット
JP4481723B2 (ja) * 2004-05-25 2010-06-16 株式会社東芝 評価方法、マスクパターン補正方法、半導体装置の製造方法、及びプログラム
US7189481B2 (en) * 2004-09-01 2007-03-13 Invarium, Inc. Characterizing flare of a projection lens
TWI431663B (zh) * 2004-09-30 2014-03-21 尼康股份有限公司 Measurement method and exposure method, and component manufacturing method
US7199863B2 (en) * 2004-12-21 2007-04-03 Asml Netherlands B.V. Method of imaging using lithographic projection apparatus
DE102005009018A1 (de) * 2005-02-28 2006-09-07 Infineon Technologies Ag Verfahren zum Testen von fotolithografischen Abbildungseinrichtungen bezüglich der Generierung von Streulicht
CN100409102C (zh) * 2005-03-07 2008-08-06 上海微电子装备有限公司 步进扫描投影光刻机中的杂散光原位检测方法
KR100788345B1 (ko) * 2005-11-24 2008-01-02 동부일렉트로닉스 주식회사 사진 공정에서 플레어 효과를 측정하는 방법
JP4882371B2 (ja) * 2005-12-27 2012-02-22 富士通セミコンダクター株式会社 フレア量の計測方法、フレア量計測用マスク及びデバイスの製造方法
JP2008218577A (ja) 2007-03-01 2008-09-18 Canon Inc 測定装置、露光装置及びデバイス製造方法
WO2009021670A1 (en) * 2007-08-10 2009-02-19 Carl Zeiss Smt Ag Method and apparatus for measuring scattered light on an optical system
US8945802B2 (en) * 2009-03-03 2015-02-03 Nikon Corporation Flare-measuring mask, flare-measuring method, and exposure method
JP2010205886A (ja) * 2009-03-03 2010-09-16 Toshiba Corp 露光装置のフレア評価方法
KR101552689B1 (ko) 2009-04-08 2015-09-14 삼성전자주식회사 플래어 평가 방법
SG173233A1 (en) * 2010-01-28 2011-08-29 Visionxtreme Pte Ltd Inspection of defects in a contact lens
US8423923B2 (en) * 2011-07-20 2013-04-16 United Microelectronics Corp. Optical proximity correction method
JP5684168B2 (ja) * 2012-02-15 2015-03-11 株式会社東芝 フレア計測方法、反射型マスクおよび露光装置
CN103604495B (zh) * 2013-11-20 2016-04-27 中国工程物理研究院应用电子学研究所 一种高能激光束杂散光能量测量***
JP6415186B2 (ja) * 2014-08-27 2018-10-31 キヤノン株式会社 評価用マスク、評価方法、露光装置及び物品の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3680425B2 (ja) 1996-06-19 2005-08-10 ソニー株式会社 フォトマスクの作製方法、及び、レジスト材料への電子線ビーム照射補正量の決定方法
JP4131880B2 (ja) 1997-07-31 2008-08-13 株式会社東芝 マスクデータ作成方法及びマスクデータ作成装置
JP2000075467A (ja) 1998-08-31 2000-03-14 Matsushita Electronics Industry Corp フォトマスク及びその製造方法、並びにそのフォトマスクを用いた半導体装置の製造方法
US6100978A (en) * 1998-10-21 2000-08-08 Naulleau; Patrick P. Dual-domain point diffraction interferometer
JP4365955B2 (ja) 1999-10-29 2009-11-18 キヤノン株式会社 フレア率測定装置
JP4068281B2 (ja) 2000-03-27 2008-03-26 株式会社東芝 フォトマスクの製造方法
JP4599797B2 (ja) * 2000-07-26 2010-12-15 株式会社ニコン フレア計測方法、露光方法、露光装置の調整方法
US6835507B2 (en) * 2001-08-08 2004-12-28 Samsung Electronics Co., Ltd. Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare
KR100416613B1 (ko) * 2001-08-08 2004-02-05 삼성전자주식회사 플레어 측정용 마스크 및 그 제조방법, 이를 이용한웨이퍼 상에 플레어의 영향을 받는 영역 측정 방법 및플레어의 영향을 받는 영역의 패턴 보정 방법
JP4051240B2 (ja) * 2002-07-31 2008-02-20 富士通株式会社 試験用フォトマスク、フレア評価方法、及びフレア補正方法
JP3939670B2 (ja) * 2003-03-26 2007-07-04 シャープ株式会社 フレア測定用フォトマスク対、フレア測定機構、及び、フレア測定方法

Also Published As

Publication number Publication date
US20040023130A1 (en) 2004-02-05
CN1472789A (zh) 2004-02-04
KR100870333B1 (ko) 2008-11-25
EP1387219B1 (de) 2009-06-24
TW200402112A (en) 2004-02-01
EP1387219A3 (de) 2005-05-25
KR20040012446A (ko) 2004-02-11
US6986973B2 (en) 2006-01-17
EP1387219A2 (de) 2004-02-04
JP2004064024A (ja) 2004-02-26
JP4051240B2 (ja) 2008-02-20
TWI225282B (en) 2004-12-11
CN1261994C (zh) 2006-06-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE