DE60313843D1 - Halbleiterlaservorrichtung und Verfahren zu deren Herstellung - Google Patents
Halbleiterlaservorrichtung und Verfahren zu deren HerstellungInfo
- Publication number
- DE60313843D1 DE60313843D1 DE60313843T DE60313843T DE60313843D1 DE 60313843 D1 DE60313843 D1 DE 60313843D1 DE 60313843 T DE60313843 T DE 60313843T DE 60313843 T DE60313843 T DE 60313843T DE 60313843 D1 DE60313843 D1 DE 60313843D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- semiconductor laser
- laser device
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002374636 | 2002-12-25 | ||
JP2002374636A JP2004207480A (ja) | 2002-12-25 | 2002-12-25 | 半導体レーザ装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60313843D1 true DE60313843D1 (de) | 2007-06-28 |
DE60313843T2 DE60313843T2 (de) | 2008-02-07 |
Family
ID=32463543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60313843T Expired - Lifetime DE60313843T2 (de) | 2002-12-25 | 2003-12-18 | Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
Country Status (5)
Country | Link |
---|---|
US (1) | US7079563B2 (de) |
EP (1) | EP1434320B1 (de) |
JP (1) | JP2004207480A (de) |
CN (1) | CN1510807A (de) |
DE (1) | DE60313843T2 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011023754A (ja) * | 2004-03-30 | 2011-02-03 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
JP2006128602A (ja) | 2004-03-30 | 2006-05-18 | Sanyo Electric Co Ltd | 半導体レーザ装置およびその製造方法 |
JP4544892B2 (ja) * | 2004-03-30 | 2010-09-15 | 三洋電機株式会社 | 半導体レーザ装置およびその製造方法 |
JP4660224B2 (ja) * | 2004-03-30 | 2011-03-30 | 三洋電機株式会社 | 半導体レーザ装置 |
JP4583128B2 (ja) * | 2004-03-30 | 2010-11-17 | 三洋電機株式会社 | 半導体レーザ装置 |
US7439551B2 (en) * | 2004-07-08 | 2008-10-21 | Sharp Kabushiki Kaisha | Nitride-based compound semiconductor light emitting device |
JP4614715B2 (ja) * | 2004-08-31 | 2011-01-19 | 三洋電機株式会社 | 半導体レーザ装置およびその製造方法 |
US7512167B2 (en) * | 2004-09-24 | 2009-03-31 | Sanyo Electric Co., Ltd. | Integrated semiconductor laser device and method of fabricating the same |
JP4556591B2 (ja) * | 2004-09-27 | 2010-10-06 | 日亜化学工業株式会社 | 半導体レーザ装置 |
JP4671728B2 (ja) * | 2005-03-25 | 2011-04-20 | 三洋電機株式会社 | 半導体レーザ装置および光ピックアップ装置 |
JP2006278576A (ja) * | 2005-03-28 | 2006-10-12 | Sanyo Electric Co Ltd | 半導体レーザ装置、半導体レーザ装置の製造方法および光ピックアップ装置 |
JP2006278577A (ja) * | 2005-03-28 | 2006-10-12 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
NO325047B1 (no) * | 2005-03-30 | 2008-01-21 | Intopto As | Optiske enheter ved bruk av et pentaert III-V material system |
JP4352337B2 (ja) * | 2005-09-16 | 2009-10-28 | ソニー株式会社 | 半導体レーザおよび半導体レーザ装置 |
JP4755199B2 (ja) * | 2005-12-20 | 2011-08-24 | パイオニア株式会社 | 多波長集積半導体レーザ装置の製造方法 |
JP2008294213A (ja) * | 2007-05-24 | 2008-12-04 | Sanyo Electric Co Ltd | 半導体素子およびその製造方法 |
FR2917910B1 (fr) * | 2007-06-22 | 2010-06-11 | Thales Sa | Dispositif de lumiere optimisee par l'utilisation de materiaux artificiels et procede de fabrication associe |
JP5024008B2 (ja) * | 2007-12-10 | 2012-09-12 | ソニー株式会社 | 半導体発光素子及びその製造方法 |
DE102008048903B4 (de) * | 2008-09-25 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauteil |
JP4901909B2 (ja) * | 2009-05-19 | 2012-03-21 | シャープ株式会社 | 光学部品及びその製造方法 |
US8653839B2 (en) * | 2009-07-17 | 2014-02-18 | Caterpillar Inc. | Zinc oxide sulfur sensors and method of using said sensors |
US20110188532A1 (en) * | 2010-02-04 | 2011-08-04 | Sanyo Electric Co., Ltd. | Semiconductor Laser Apparatus |
JP5521611B2 (ja) * | 2010-02-15 | 2014-06-18 | ソニー株式会社 | 光装置および光機器 |
JP5633670B2 (ja) * | 2010-03-01 | 2014-12-03 | ソニー株式会社 | 発光装置およびそれを用いた光装置 |
JP2010166103A (ja) * | 2010-05-07 | 2010-07-29 | Sanyo Electric Co Ltd | 集積型半導体レーザ素子およびその製造方法 |
US9362444B1 (en) * | 2015-03-18 | 2016-06-07 | International Business Machines Corporation | Optoelectronics and CMOS integration on GOI substrate |
CN114079228B (zh) * | 2020-08-14 | 2024-06-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | 激光器及其制作方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4399541A (en) * | 1981-02-17 | 1983-08-16 | Northern Telecom Limited | Light emitting device package having combined heater/cooler |
WO1995018836A1 (en) * | 1994-01-11 | 1995-07-13 | Exxon Chemical Patents Inc. | Alumoxanes and catalysts comprising alumoxanes |
US5699375A (en) * | 1996-07-08 | 1997-12-16 | Xerox Corporation | Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors |
US6031858A (en) * | 1996-09-09 | 2000-02-29 | Kabushiki Kaisha Toshiba | Semiconductor laser and method of fabricating same |
JPH11112091A (ja) * | 1997-09-30 | 1999-04-23 | Victor Co Of Japan Ltd | 半導体レーザ装置 |
US6144683A (en) * | 1998-01-07 | 2000-11-07 | Xerox Corporation | Red, infrared, and blue stacked laser diode array by wafer fusion |
US5920766A (en) * | 1998-01-07 | 1999-07-06 | Xerox Corporation | Red and blue stacked laser diode array by wafer fusion |
JPH11298093A (ja) * | 1998-04-15 | 1999-10-29 | Victor Co Of Japan Ltd | 二波長半導体レーザ装置 |
US6136623A (en) * | 1998-05-06 | 2000-10-24 | Xerox Corporation | Multiple wavelength laser arrays by flip-chip bonding |
US6252896B1 (en) * | 1999-03-05 | 2001-06-26 | Agilent Technologies, Inc. | Long-Wavelength VCSEL using buried bragg reflectors |
JP3486900B2 (ja) | 2000-02-15 | 2004-01-13 | ソニー株式会社 | 発光装置およびそれを用いた光装置 |
US6661824B2 (en) * | 2000-02-18 | 2003-12-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and method for fabricating the same |
JP2002043697A (ja) * | 2000-07-25 | 2002-02-08 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置およびその製造方法 |
JP2002176229A (ja) * | 2000-12-07 | 2002-06-21 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
JP2002179229A (ja) | 2000-12-15 | 2002-06-26 | Mitsubishi Pencil Co Ltd | ワーク搬送装置及びワーク搬送方法 |
-
2002
- 2002-12-25 JP JP2002374636A patent/JP2004207480A/ja active Pending
-
2003
- 2003-12-18 DE DE60313843T patent/DE60313843T2/de not_active Expired - Lifetime
- 2003-12-18 EP EP03029193A patent/EP1434320B1/de not_active Expired - Fee Related
- 2003-12-22 CN CNA2003101215568A patent/CN1510807A/zh active Pending
- 2003-12-24 US US10/743,944 patent/US7079563B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1434320A3 (de) | 2005-01-05 |
CN1510807A (zh) | 2004-07-07 |
DE60313843T2 (de) | 2008-02-07 |
EP1434320A2 (de) | 2004-06-30 |
US20040136428A1 (en) | 2004-07-15 |
JP2004207480A (ja) | 2004-07-22 |
EP1434320B1 (de) | 2007-05-16 |
US7079563B2 (en) | 2006-07-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8364 | No opposition during term of opposition |