DE60309470D1 - Selbstkalibrierendes aktivierungssignal für leseverstärker - Google Patents

Selbstkalibrierendes aktivierungssignal für leseverstärker

Info

Publication number
DE60309470D1
DE60309470D1 DE60309470T DE60309470T DE60309470D1 DE 60309470 D1 DE60309470 D1 DE 60309470D1 DE 60309470 T DE60309470 T DE 60309470T DE 60309470 T DE60309470 T DE 60309470T DE 60309470 D1 DE60309470 D1 DE 60309470D1
Authority
DE
Germany
Prior art keywords
calibrating
reader
self
activation signal
activation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60309470T
Other languages
English (en)
Other versions
DE60309470T2 (de
Inventor
Ajay Bhatia
C Braganza
V Morton
Shashank Shastry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Graphics Properties Holdings Inc
Original Assignee
Silicon Graphics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Graphics Inc filed Critical Silicon Graphics Inc
Publication of DE60309470D1 publication Critical patent/DE60309470D1/de
Application granted granted Critical
Publication of DE60309470T2 publication Critical patent/DE60309470T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222Clock generating, synchronizing or distributing circuits within memory device
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03LAUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00Automatic control of frequency or phase; Synchronisation
    • H03L7/06Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08Details of the phase-locked loop
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2207/00Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06Sense amplifier related aspects
    • G11C2207/065Sense amplifier drivers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2207/00Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22Control and timing of internal memory operations
    • G11C2207/2254Calibration
DE60309470T 2002-06-26 2003-06-26 Selbstkalibrierendes aktivierungssignal für leseverstärker Expired - Fee Related DE60309470T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/180,478 US6714464B2 (en) 2002-06-26 2002-06-26 System and method for a self-calibrating sense-amplifier strobe
US180478 2002-06-26
PCT/US2003/020311 WO2004003920A1 (en) 2002-06-26 2003-06-26 Self-calibrating sense amplifier strobe

Publications (2)

Publication Number Publication Date
DE60309470D1 true DE60309470D1 (de) 2006-12-14
DE60309470T2 DE60309470T2 (de) 2007-09-06

Family

ID=29778936

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60309470T Expired - Fee Related DE60309470T2 (de) 2002-06-26 2003-06-26 Selbstkalibrierendes aktivierungssignal für leseverstärker

Country Status (7)

Country Link
US (1) US6714464B2 (de)
EP (1) EP1516341B1 (de)
JP (1) JP2005531099A (de)
KR (1) KR100968632B1 (de)
DE (1) DE60309470T2 (de)
TW (1) TW200409136A (de)
WO (1) WO2004003920A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6819599B2 (en) * 2002-08-01 2004-11-16 Micron Technology, Inc. Programmable DQS preamble
US7239537B2 (en) * 2005-01-12 2007-07-03 International Business Machines Corporation Method and apparatus for current sense amplifier calibration in MRAM devices
US7390616B2 (en) * 2005-01-12 2008-06-24 International Business Machines Corporation Method for post lithographic critical dimension shrinking using post overcoat planarization
US7268600B2 (en) * 2005-11-30 2007-09-11 International Business Machines Corporation Phase- or frequency-locked loop circuit having a glitch detector for detecting triggering-edge-type glitches in a noisy signal
KR100776736B1 (ko) * 2005-12-28 2007-11-19 주식회사 하이닉스반도체 클럭 동기 장치
US7715251B2 (en) * 2006-10-25 2010-05-11 Hewlett-Packard Development Company, L.P. Memory access strobe configuration system and process
KR100866146B1 (ko) 2007-10-11 2008-10-31 주식회사 하이닉스반도체 센스 앰프 제어 회로
US7864625B2 (en) * 2008-10-02 2011-01-04 International Business Machines Corporation Optimizing SRAM performance over extended voltage or process range using self-timed calibration of local clock generator
JP5359804B2 (ja) * 2009-11-16 2013-12-04 ソニー株式会社 不揮発性半導体メモリデバイス
US8351287B1 (en) 2010-12-22 2013-01-08 Lattice Semiconductor Corporation Bitline floating circuit for memory power reduction
US8477549B1 (en) 2010-12-22 2013-07-02 Lattice Semiconductor Corporation Triggered sense amplifier
TWI560714B (en) * 2014-12-24 2016-12-01 Winbond Electronics Corp Resistance random access memory
US10170162B2 (en) * 2017-05-23 2019-01-01 Sandisk Technologies Llc Sense amplifier calibration
EP4009062A1 (de) * 2020-12-01 2022-06-08 Thales DIS France SA System auf chip mit störungserkennung der spannung auf der grundlage der uhrensynchronisierungsüberwachung
DE102021205318A1 (de) * 2021-05-26 2022-12-01 Robert Bosch Gesellschaft mit beschränkter Haftung Speichervorrichtung und Verfahren zur Durchführung aufeinanderfolgender Speicherzugriffe

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61110394A (ja) * 1984-10-31 1986-05-28 Mitsubishi Electric Corp 半導体記憶装置
JP2865469B2 (ja) * 1992-01-24 1999-03-08 三菱電機株式会社 半導体メモリ装置
IL118853A0 (en) * 1996-07-15 1996-10-31 Atlas Dan Heart rate monitor with age-dependent target-zone feedback particularly useful to the blind
US5936905A (en) * 1996-09-03 1999-08-10 Townsend And Townsend And Crew Llp Self adjusting delay circuit and method for compensating sense amplifier clock timing
JP3001454B2 (ja) * 1997-04-23 2000-01-24 日本電気アイシーマイコンシステム株式会社 半導体装置
US6185712B1 (en) 1998-07-02 2001-02-06 International Business Machines Corporation Chip performance optimization with self programmed built in self test
JP2001022650A (ja) * 1999-07-08 2001-01-26 Mitsubishi Electric Corp 半導体不揮発性記憶装置
KR100335275B1 (ko) * 1999-12-28 2002-05-03 박종섭 센스앰프 구동 제어장치
JP3484388B2 (ja) * 2000-02-08 2004-01-06 日本電気株式会社 半導体記憶装置
KR100343143B1 (ko) * 2000-08-01 2002-07-05 윤종용 비트 라인 불량 검출을 위한 센스 앰프 제어 회로를구비하는 반도체 메모리 장치 및 그의 제어 방법
US6870770B2 (en) * 2001-12-12 2005-03-22 Micron Technology, Inc. Method and architecture to calibrate read operations in synchronous flash memory

Also Published As

Publication number Publication date
KR100968632B1 (ko) 2010-07-06
US20040001364A1 (en) 2004-01-01
EP1516341B1 (de) 2006-11-02
KR20050072057A (ko) 2005-07-08
JP2005531099A (ja) 2005-10-13
US6714464B2 (en) 2004-03-30
DE60309470T2 (de) 2007-09-06
TW200409136A (en) 2004-06-01
EP1516341A1 (de) 2005-03-23
WO2004003920A1 (en) 2004-01-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee