DE60210834D1 - Halbleiterbauelement und zugehöriges Herstellungsverfahren - Google Patents
Halbleiterbauelement und zugehöriges HerstellungsverfahrenInfo
- Publication number
- DE60210834D1 DE60210834D1 DE60210834T DE60210834T DE60210834D1 DE 60210834 D1 DE60210834 D1 DE 60210834D1 DE 60210834 T DE60210834 T DE 60210834T DE 60210834 T DE60210834 T DE 60210834T DE 60210834 D1 DE60210834 D1 DE 60210834D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor component
- associated manufacturing
- manufacturing
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
- H01L27/0808—Varactor diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001027914 | 2001-02-05 | ||
JP2001027914 | 2001-02-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60210834D1 true DE60210834D1 (de) | 2006-06-01 |
DE60210834T2 DE60210834T2 (de) | 2006-09-14 |
Family
ID=18892503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60210834T Expired - Lifetime DE60210834T2 (de) | 2001-02-05 | 2002-02-05 | Halbleiterbauelement und zugehöriges Herstellungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (2) | US6642607B2 (de) |
EP (1) | EP1229584B1 (de) |
KR (1) | KR20020065375A (de) |
CN (1) | CN1253946C (de) |
DE (1) | DE60210834T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100451764B1 (ko) * | 2001-12-12 | 2004-10-08 | 주식회사 하이닉스반도체 | 전력 분배기로 사용하기 위한 반도체 장치 |
US6689643B2 (en) * | 2002-04-25 | 2004-02-10 | Chartered Semiconductor Manufacturing Ltd. | Adjustable 3D capacitor |
US20080213987A1 (en) * | 2003-10-24 | 2008-09-04 | Konin-Klijke Philips Electronics, N.V. | Method of Fabricating a Sige Semiconductor Structure |
US6882029B1 (en) * | 2003-11-27 | 2005-04-19 | United Microelectronics Corp. | Junction varactor with high Q factor and wide tuning range |
JP4857531B2 (ja) * | 2004-07-08 | 2012-01-18 | 三菱電機株式会社 | 半導体装置 |
KR100618869B1 (ko) * | 2004-10-22 | 2006-09-13 | 삼성전자주식회사 | 커패시터를 포함하는 반도체 소자 및 그 제조방법 |
KR100701389B1 (ko) * | 2004-12-27 | 2007-03-28 | 동부일렉트로닉스 주식회사 | 반도체 장치의 가변용량 커패시터/인덕터 구동회로 |
US7525177B2 (en) * | 2005-04-01 | 2009-04-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Controllable varactor within dummy substrate pattern |
US7631985B1 (en) * | 2005-05-02 | 2009-12-15 | Genlyte Thomas Group, Llc | Finite element and multi-distribution LED luminaire |
US20080026545A1 (en) * | 2006-07-28 | 2008-01-31 | Paul Cooke | Integrated devices on a common compound semiconductor III-V wafer |
KR100796724B1 (ko) * | 2006-09-05 | 2008-01-21 | 삼성전자주식회사 | 커패시터 및 이의 제조 방법 |
KR101201903B1 (ko) * | 2010-07-20 | 2012-11-16 | 매그나칩 반도체 유한회사 | 반도체소자의 소자분리 구조 및 그 형성방법 |
US20120241710A1 (en) * | 2011-03-21 | 2012-09-27 | Nanyang Technological University | Fabrication of RRAM Cell Using CMOS Compatible Processes |
US8698118B2 (en) | 2012-02-29 | 2014-04-15 | Globalfoundries Singapore Pte Ltd | Compact RRAM device and methods of making same |
US9276041B2 (en) | 2012-03-19 | 2016-03-01 | Globalfoundries Singapore Pte Ltd | Three dimensional RRAM device, and methods of making same |
CN107346792B (zh) * | 2017-07-25 | 2020-01-10 | 上海华力微电子有限公司 | 一种用于闪存电路中的变容二极管结构及其制造方法 |
FR3098016A1 (fr) * | 2019-06-28 | 2021-01-01 | Stmicroelectronics (Crolles 2) Sas | Procédé de réalisation d’une diode |
FR3098015A1 (fr) | 2019-06-28 | 2021-01-01 | Stmicroelectronics (Crolles 2) Sas | Procédé de réalisation d’une diode |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL268758A (de) * | 1960-09-20 | |||
GB1312510A (en) * | 1969-06-27 | 1973-04-04 | Hitachi Ltd | Method of manufacturing a multi-layer semiconductor device |
US4287320A (en) * | 1974-08-01 | 1981-09-01 | Minnesota Mining And Manufacturing Company | Composition of fluoroelastomer and diorganosulfuroxide |
US4035565A (en) * | 1975-03-27 | 1977-07-12 | E. I. Du Pont De Nemours And Company | Fluoropolymer containing a small amount of bromine-containing olefin units |
US4450263A (en) * | 1979-08-30 | 1984-05-22 | Minnesota Mining And Manufacturing Company | Fluoropolymer gum of vinylidene fluoride, hexafluoropropene, and bromodifluoroethylene |
JPS61235409A (ja) * | 1985-04-10 | 1986-10-20 | Daikin Ind Ltd | 含フツ素弾性状共重合体 |
JPS6291560A (ja) * | 1985-10-18 | 1987-04-27 | Asahi Glass Co Ltd | 潤滑性樹脂組成物 |
JPS63108780A (ja) * | 1986-10-27 | 1988-05-13 | Toshiba Corp | 砒化ガリウム可変容量ダイオ−ド及びその製造方法 |
US5021852A (en) * | 1989-05-18 | 1991-06-04 | Texas Instruments Incorporated | Semiconductor integrated circuit device |
JP2761961B2 (ja) * | 1990-04-06 | 1998-06-04 | 健一 上山 | 半導体可変容量素子 |
US5384374A (en) * | 1991-01-11 | 1995-01-24 | Minnesota Mining And Manufacturing Company | Curing fluorocarbon elastomers |
JP3103408B2 (ja) * | 1991-11-20 | 2000-10-30 | 旭硝子株式会社 | 含フッ素熱可塑性エラストマー組成物及びその製造方法 |
KR0137070B1 (en) * | 1994-07-26 | 1998-04-24 | Korea Advanced Inst Sci & Tech | A variable capacitance diode with area controlled |
EP0811241A1 (de) | 1995-12-21 | 1997-12-10 | Koninklijke Philips Electronics N.V. | Methode zur herstellung einer halbleiter anordnung mit einem durch epitaxie erhaltenen pn übergang |
JPH10284753A (ja) * | 1997-04-01 | 1998-10-23 | Sony Corp | 半導体装置及びその製造方法 |
US6407174B1 (en) * | 1997-07-04 | 2002-06-18 | Advanced Elastomer Systems, L.P. | Propylene/ethylene/α-olefin terpolymer thermoplastic elastomer vulcanizates |
SE515783C2 (sv) * | 1997-09-11 | 2001-10-08 | Ericsson Telefon Ab L M | Elektriska anordningar jämte förfarande för deras tillverkning |
US5886374A (en) * | 1998-01-05 | 1999-03-23 | Motorola, Inc. | Optically sensitive device and method |
US6087683A (en) * | 1998-07-31 | 2000-07-11 | Lucent Technologies | Silicon germanium heterostructure bipolar transistor with indium doped base |
US6066697A (en) * | 1998-08-25 | 2000-05-23 | The University Of Akron | Thermoplastic compositions containing elastomers and fluorine containing thermoplastics |
DE60037558T2 (de) * | 1999-03-10 | 2009-01-08 | Nxp B.V. | Verfahren zur herstellung eines halbleiterbauelements mit einem bipolartransistor und einem kondensator |
EP1965431A2 (de) * | 1999-06-22 | 2008-09-03 | Matsushita Electric Industrial Co., Ltd. | Heteroübergangsbipolartransistor und Verfahren zu dessen Herstellung |
US6800921B1 (en) * | 2000-03-01 | 2004-10-05 | International Business Machines Corporation | Method of fabricating a polysilicon capacitor utilizing fet and bipolar base polysilicon layers |
US6461925B1 (en) * | 2000-03-30 | 2002-10-08 | Motorola, Inc. | Method of manufacturing a heterojunction BiCMOS integrated circuit |
US6437030B1 (en) * | 2000-05-24 | 2002-08-20 | Advanced Elastomer Systems, L.P. | Thermoplastic vulcanizates and process for making the same |
US6310141B1 (en) * | 2000-06-27 | 2001-10-30 | Dyneon Llc | Fluoropolymer-containing compositions |
US6429249B1 (en) * | 2000-06-30 | 2002-08-06 | Nexpress Solutions Llc | Fluorocarbon thermoplastic random copolymer composition |
JP2002217282A (ja) * | 2001-01-19 | 2002-08-02 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
-
2002
- 2002-02-04 US US10/061,365 patent/US6642607B2/en not_active Expired - Lifetime
- 2002-02-05 KR KR1020020006366A patent/KR20020065375A/ko not_active Application Discontinuation
- 2002-02-05 EP EP02002649A patent/EP1229584B1/de not_active Expired - Lifetime
- 2002-02-05 CN CNB021031738A patent/CN1253946C/zh not_active Expired - Fee Related
- 2002-02-05 DE DE60210834T patent/DE60210834T2/de not_active Expired - Lifetime
-
2003
- 2003-07-17 US US10/620,613 patent/US6800532B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20020135009A1 (en) | 2002-09-26 |
US6642607B2 (en) | 2003-11-04 |
CN1253946C (zh) | 2006-04-26 |
US6800532B2 (en) | 2004-10-05 |
CN1369918A (zh) | 2002-09-18 |
KR20020065375A (ko) | 2002-08-13 |
EP1229584A2 (de) | 2002-08-07 |
US20040018692A1 (en) | 2004-01-29 |
EP1229584B1 (de) | 2006-04-26 |
EP1229584A3 (de) | 2004-10-27 |
DE60210834T2 (de) | 2006-09-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |