DE60207658D1 - Nichtflüchtiger Halbleiterspeicher und Verfahren zu dessen Herstellung - Google Patents

Nichtflüchtiger Halbleiterspeicher und Verfahren zu dessen Herstellung

Info

Publication number
DE60207658D1
DE60207658D1 DE60207658T DE60207658T DE60207658D1 DE 60207658 D1 DE60207658 D1 DE 60207658D1 DE 60207658 T DE60207658 T DE 60207658T DE 60207658 T DE60207658 T DE 60207658T DE 60207658 D1 DE60207658 D1 DE 60207658D1
Authority
DE
Germany
Prior art keywords
production
semiconductor memory
volatile semiconductor
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60207658T
Other languages
English (en)
Other versions
DE60207658T2 (de
Inventor
Hiromasa Fujimoto
Fumihiko Noro
Masataka Kusumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE60207658D1 publication Critical patent/DE60207658D1/de
Publication of DE60207658T2 publication Critical patent/DE60207658T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
DE60207658T 2001-09-11 2002-09-10 Nichtflüchtiger Halbleiterspeicher und Verfahren zu dessen Herstellung Expired - Fee Related DE60207658T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001274471 2001-09-11
JP2001274471A JP2003086716A (ja) 2001-09-11 2001-09-11 不揮発性半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE60207658D1 true DE60207658D1 (de) 2006-01-05
DE60207658T2 DE60207658T2 (de) 2006-06-08

Family

ID=19099493

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60207658T Expired - Fee Related DE60207658T2 (de) 2001-09-11 2002-09-10 Nichtflüchtiger Halbleiterspeicher und Verfahren zu dessen Herstellung

Country Status (6)

Country Link
US (2) US6830973B2 (de)
EP (1) EP1293987B1 (de)
JP (1) JP2003086716A (de)
KR (1) KR20030022735A (de)
DE (1) DE60207658T2 (de)
TW (1) TW587342B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7309629B2 (en) 2002-01-02 2007-12-18 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor device
JP4540993B2 (ja) 2004-01-20 2010-09-08 パナソニック株式会社 半導体装置の製造方法
CN100394562C (zh) * 2003-12-12 2008-06-11 联华电子股份有限公司 异质接面双极晶体管制造方法
KR100665396B1 (ko) * 2004-01-09 2007-01-04 에스티마이크로일렉트로닉스 엔.브이. 플래쉬 메모리 소자의 제조 방법
US7910429B2 (en) * 2004-04-07 2011-03-22 Promos Technologies, Inc. Method of forming ONO-type sidewall with reduced bird's beak
US7297597B2 (en) * 2004-07-23 2007-11-20 Promos Technologies, Inc. Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics for associated high voltage write transistors and gate dielectrics for low voltage logic transistors by using ISSG
US7118968B2 (en) * 2004-08-17 2006-10-10 Macronix International Co., Ltd. Method for manufacturing interpoly dielectric
KR100646085B1 (ko) * 2005-03-08 2006-11-14 매그나칩 반도체 유한회사 비휘발성 메모리 소자, 그 제조방법, 및 이를 이용한 반도체 소자의 제조방법
KR100673242B1 (ko) * 2005-06-24 2007-01-22 주식회사 하이닉스반도체 플래쉬 메모리 소자의 유전체막 제조방법
JP4507108B2 (ja) * 2005-09-06 2010-07-21 エルピーダメモリ株式会社 膜厚分布制御方法及び半導体装置の製造方法
KR100641075B1 (ko) * 2005-09-20 2006-11-01 삼성전자주식회사 트랜지스터, 이의 형성 방법, 이를 포함하는 반도체 장치및 그 제조 방법
JP2007311695A (ja) * 2006-05-22 2007-11-29 Renesas Technology Corp 半導体装置の製造方法
JP2009032808A (ja) * 2007-07-25 2009-02-12 Toshiba Corp 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4288256A (en) * 1977-12-23 1981-09-08 International Business Machines Corporation Method of making FET containing stacked gates
US4380863A (en) * 1979-12-10 1983-04-26 Texas Instruments Incorporated Method of making double level polysilicon series transistor devices
US4698787A (en) 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
US5016215A (en) * 1987-09-30 1991-05-14 Texas Instruments Incorporated High speed EPROM with reverse polarity voltages applied to source and drain regions during reading and writing
US5677867A (en) * 1991-06-12 1997-10-14 Hazani; Emanuel Memory with isolatable expandable bit lines
JP2585180B2 (ja) * 1992-09-02 1997-02-26 三菱電機株式会社 半導体記憶装置およびその製造方法
KR100193101B1 (ko) * 1994-07-22 1999-06-15 모리시다 요이치 비휘발성 반도체 기억장치 및 그 구동방법
JP3600326B2 (ja) * 1994-09-29 2004-12-15 旺宏電子股▲ふん▼有限公司 不揮発性半導体メモリ装置およびその製造方法
US5429971A (en) * 1994-10-03 1995-07-04 United Microelectronics Corporation Method of making single bit erase flash EEPROM
US5464785A (en) * 1994-11-30 1995-11-07 United Microelectronics Corporation Method of making a flash EPROM device having a drain edge P+ implant
US5963808A (en) * 1997-01-15 1999-10-05 Macronix International Co., Ltd. Method of forming an asymmetric bird's beak cell for a flash EEPROM
US6272050B1 (en) * 1999-05-28 2001-08-07 Vlsi Technology, Inc. Method and apparatus for providing an embedded flash-EEPROM technology
US20030017670A1 (en) * 2001-07-20 2003-01-23 Macronix International Co., Ltd. Method of manufacturing a semiconductor memory device with a gate dielectric stack

Also Published As

Publication number Publication date
EP1293987B1 (de) 2005-11-30
US20030047775A1 (en) 2003-03-13
JP2003086716A (ja) 2003-03-20
US20050051837A1 (en) 2005-03-10
DE60207658T2 (de) 2006-06-08
US6830973B2 (en) 2004-12-14
TW587342B (en) 2004-05-11
EP1293987A1 (de) 2003-03-19
KR20030022735A (ko) 2003-03-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee