DE602006018369D1 - Halbleiterspeicher und testsystem - Google Patents
Halbleiterspeicher und testsystemInfo
- Publication number
- DE602006018369D1 DE602006018369D1 DE602006018369T DE602006018369T DE602006018369D1 DE 602006018369 D1 DE602006018369 D1 DE 602006018369D1 DE 602006018369 T DE602006018369 T DE 602006018369T DE 602006018369 T DE602006018369 T DE 602006018369T DE 602006018369 D1 DE602006018369 D1 DE 602006018369D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- test system
- test
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2006/306266 WO2007110926A1 (ja) | 2006-03-28 | 2006-03-28 | 半導体メモリおよびテストシステム |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602006018369D1 true DE602006018369D1 (de) | 2010-12-30 |
Family
ID=38540866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602006018369T Active DE602006018369D1 (de) | 2006-03-28 | 2006-03-28 | Halbleiterspeicher und testsystem |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7719914B2 (de) |
| EP (1) | EP2003652B1 (de) |
| JP (1) | JP4777417B2 (de) |
| KR (1) | KR100959848B1 (de) |
| CN (1) | CN101405818B (de) |
| DE (1) | DE602006018369D1 (de) |
| WO (1) | WO2007110926A1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI406290B (zh) * | 2009-06-26 | 2013-08-21 | Etron Technology Inc | 一種字元線缺陷之偵測裝置與方法 |
| CN102376348B (zh) * | 2010-08-20 | 2013-11-27 | 中国科学院微电子研究所 | 一种低功耗的动态随机存储器 |
| KR20130072086A (ko) * | 2011-12-21 | 2013-07-01 | 에스케이하이닉스 주식회사 | 퓨즈 회로 및 이의 검증 방법 |
| KR102003894B1 (ko) * | 2012-09-20 | 2019-07-25 | 에스케이하이닉스 주식회사 | 셀 어레이, 메모리 및 이를 포함하는 메모리 시스템 |
| KR20170033593A (ko) | 2015-09-17 | 2017-03-27 | 에스케이하이닉스 주식회사 | 반도체장치 및 반도체시스템 |
| KR102650154B1 (ko) | 2016-12-08 | 2024-03-22 | 삼성전자주식회사 | 가상 페일 생성기를 포함하는 메모리 장치 및 그것의 메모리 셀 리페어 방법 |
| WO2020153054A1 (ja) * | 2019-01-22 | 2020-07-30 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置及び電子機器 |
| JP6994649B2 (ja) * | 2019-07-09 | 2022-01-14 | パナソニックＩｐマネジメント株式会社 | 半導体メモリデバイス、エラー通知方法 |
| US11960759B2 (en) * | 2022-06-28 | 2024-04-16 | Macronix International Co., Ltd. | Memory device and data searching method thereof |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07182893A (ja) * | 1993-12-24 | 1995-07-21 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR19980052127A (ko) * | 1996-12-24 | 1998-09-25 | 구자홍 | 메모리 검사기의 비교 장치 |
| JPH11102598A (ja) | 1997-09-29 | 1999-04-13 | Toshiba Corp | メモリ不良救済解析装置 |
| US6282145B1 (en) * | 1999-01-14 | 2001-08-28 | Silicon Storage Technology, Inc. | Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system |
| JP2001035187A (ja) * | 1999-07-21 | 2001-02-09 | Hitachi Ltd | 半導体装置およびその冗長救済方法 |
| WO2001020614A1 (en) * | 1999-09-15 | 2001-03-22 | Koninklijke Philips Electronics N.V. | Method of testing a memory |
| JP2001273788A (ja) * | 2000-03-29 | 2001-10-05 | Hitachi Ltd | 半導体記憶装置 |
| US6563743B2 (en) * | 2000-11-27 | 2003-05-13 | Hitachi, Ltd. | Semiconductor device having dummy cells and semiconductor device having dummy cells for redundancy |
| JP2003007091A (ja) | 2001-06-21 | 2003-01-10 | Mitsubishi Electric Corp | 半導体記憶装置の不良ビット救済装置および方法 |
| JP2004220722A (ja) * | 2003-01-16 | 2004-08-05 | Renesas Technology Corp | 半導体記憶装置 |
| JP2005063529A (ja) | 2003-08-08 | 2005-03-10 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| KR100716660B1 (ko) * | 2004-05-06 | 2007-05-09 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 |
-
2006
- 2006-03-28 CN CN2006800539542A patent/CN101405818B/zh not_active Expired - Fee Related
- 2006-03-28 DE DE602006018369T patent/DE602006018369D1/de active Active
- 2006-03-28 EP EP06730214A patent/EP2003652B1/de not_active Expired - Fee Related
- 2006-03-28 KR KR1020087023475A patent/KR100959848B1/ko not_active IP Right Cessation
- 2006-03-28 WO PCT/JP2006/306266 patent/WO2007110926A1/ja active Application Filing
- 2006-03-28 JP JP2008507312A patent/JP4777417B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-26 US US12/239,052 patent/US7719914B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7719914B2 (en) | 2010-05-18 |
| CN101405818B (zh) | 2012-10-03 |
| KR100959848B1 (ko) | 2010-05-27 |
| JPWO2007110926A1 (ja) | 2009-08-06 |
| WO2007110926A1 (ja) | 2007-10-04 |
| EP2003652A9 (de) | 2009-04-08 |
| CN101405818A (zh) | 2009-04-08 |
| JP4777417B2 (ja) | 2011-09-21 |
| US20090027982A1 (en) | 2009-01-29 |
| EP2003652A2 (de) | 2008-12-17 |
| EP2003652B1 (de) | 2010-11-17 |
| KR20080098080A (ko) | 2008-11-06 |
| EP2003652A4 (de) | 2009-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8328 | Change in the person/name/address of the agent |
Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE |