DE602005004752D1 - Organischer Dünnfilmtransistor welcher einen dünnen Fluoropolymerfilm enthält - Google Patents
Organischer Dünnfilmtransistor welcher einen dünnen Fluoropolymerfilm enthältInfo
- Publication number
- DE602005004752D1 DE602005004752D1 DE602005004752T DE602005004752T DE602005004752D1 DE 602005004752 D1 DE602005004752 D1 DE 602005004752D1 DE 602005004752 T DE602005004752 T DE 602005004752T DE 602005004752 T DE602005004752 T DE 602005004752T DE 602005004752 D1 DE602005004752 D1 DE 602005004752D1
- Authority
- DE
- Germany
- Prior art keywords
- thin
- transistor containing
- film
- film transistor
- organic thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010408 film Substances 0.000 title 1
- 229920002313 fluoropolymer Polymers 0.000 title 1
- 239000004811 fluoropolymer Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2005001759 | 2005-01-07 | ||
KR1020050001759A KR101086159B1 (ko) | 2005-01-07 | 2005-01-07 | 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602005004752D1 true DE602005004752D1 (de) | 2008-03-27 |
DE602005004752T2 DE602005004752T2 (de) | 2009-03-05 |
Family
ID=36101287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005004752T Active DE602005004752T2 (de) | 2005-01-07 | 2005-12-22 | Organischer Dünnfilmtransistor welcher einen dünnen Fluoropolymerfilm enthält |
Country Status (6)
Country | Link |
---|---|
US (1) | US7364940B2 (de) |
EP (1) | EP1679754B1 (de) |
JP (1) | JP4902203B2 (de) |
KR (1) | KR101086159B1 (de) |
CN (1) | CN100514696C (de) |
DE (1) | DE602005004752T2 (de) |
Families Citing this family (42)
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KR100947702B1 (ko) * | 2003-02-26 | 2010-03-16 | 삼성전자주식회사 | 경화성 작용기로 표면수식된 탄소나노튜브를 이용한패턴박막 형성방법 및 고분자 복합체의 제조방법 |
KR101151096B1 (ko) * | 2006-11-30 | 2012-06-01 | 삼성전자주식회사 | 표면 수식된 탄소나노튜브를 이용한 유기박막 트랜지스터 |
US20060231908A1 (en) * | 2005-04-13 | 2006-10-19 | Xerox Corporation | Multilayer gate dielectric |
US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
KR101186725B1 (ko) * | 2006-02-21 | 2012-09-28 | 삼성전자주식회사 | 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터 및 이의 제조방법 |
WO2007099690A1 (ja) * | 2006-02-28 | 2007-09-07 | Pioneer Corporation | 有機トランジスタ及びその製造方法 |
KR101224723B1 (ko) | 2006-09-15 | 2013-01-21 | 삼성전자주식회사 | 유기 절연막 조성물, 이를 이용하여 제조된 유기 절연막 및유기 박막 트랜지스터 |
KR20080033780A (ko) * | 2006-10-13 | 2008-04-17 | 삼성전자주식회사 | 다성분계 탄소나노튜브-고분자 복합체, 이를 형성하기 위한조성물 및 그 제조방법 |
KR101279927B1 (ko) * | 2006-10-16 | 2013-07-04 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
EP1936712A1 (de) * | 2006-12-23 | 2008-06-25 | ETH Zürich | Organische Feldeffekttransistoren mit polymerem Gate-Dielektrikum und Herstellungsverfahren dafür |
CN100456517C (zh) * | 2007-01-23 | 2009-01-28 | 中国科学院长春应用化学研究所 | 轴向取代酞菁化合物用于制备有机薄膜晶体管的应用 |
KR101316291B1 (ko) * | 2007-02-16 | 2013-10-08 | 삼성전자주식회사 | 공중합체, 유기절연층 조성물 및 그를 이용하여 제조된유기 절연층 및 유기 박막 트랜지스터 |
CN101022152B (zh) * | 2007-03-20 | 2011-03-09 | 广州新视界光电科技有限公司 | 聚合物电解质薄膜晶体管 |
JP5320746B2 (ja) * | 2007-03-28 | 2013-10-23 | 凸版印刷株式会社 | 薄膜トランジスタ |
JP5657379B2 (ja) * | 2007-04-25 | 2015-01-21 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 電子装置の製造方法 |
GB0709093D0 (en) * | 2007-05-11 | 2007-06-20 | Plastic Logic Ltd | Electronic device incorporating parylene within a dielectric bilayer |
US7879688B2 (en) * | 2007-06-29 | 2011-02-01 | 3M Innovative Properties Company | Methods for making electronic devices with a solution deposited gate dielectric |
US20090001356A1 (en) * | 2007-06-29 | 2009-01-01 | 3M Innovative Properties Company | Electronic devices having a solution deposited gate dielectric |
FR2919521B1 (fr) * | 2007-08-01 | 2012-03-09 | Commissariat Energie Atomique | Couche d'accroche sur des polymeres fluores |
TWI345671B (en) * | 2007-08-10 | 2011-07-21 | Au Optronics Corp | Thin film transistor, pixel structure and liquid crystal display panel |
KR101445876B1 (ko) * | 2008-02-19 | 2014-09-29 | 삼성전자주식회사 | 유기 절연체 조성물, 이를 이용하는 유기 절연층 및 유기 박막 트랜지스터 |
GB2458940B (en) * | 2008-04-03 | 2010-10-06 | Cambridge Display Tech Ltd | Organic thin film transistors |
CN100568574C (zh) * | 2008-06-19 | 2009-12-09 | 中国科学院化学研究所 | 一种有机场效应晶体管及其制备方法与应用 |
US7855097B2 (en) * | 2008-07-11 | 2010-12-21 | Organicid, Inc. | Method of increasing yield in OFETs by using a high-K dielectric layer in a dual dielectric layer |
JP5630036B2 (ja) | 2009-05-07 | 2014-11-26 | セイコーエプソン株式会社 | 有機トランジスター、有機トランジスターの製造方法、電気光学装置および電子機器 |
GB2474827A (en) * | 2009-08-04 | 2011-05-04 | Cambridge Display Tech Ltd | Surface modification |
TW201126606A (en) * | 2009-09-15 | 2011-08-01 | Sumitomo Chemical Co | Photocrosslinkable organic thin-film transistor insulation layer material |
US8211782B2 (en) * | 2009-10-23 | 2012-07-03 | Palo Alto Research Center Incorporated | Printed material constrained by well structures |
KR101603768B1 (ko) * | 2009-12-22 | 2016-03-15 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 평판표시장치 |
JP2011216864A (ja) * | 2010-03-15 | 2011-10-27 | Canon Inc | 半導体装置とその製造方法 |
CN103403903B (zh) * | 2010-10-07 | 2017-02-15 | 乔治亚州技术研究公司 | 场效应晶体管及其制造方法 |
CN102637825B (zh) * | 2012-04-24 | 2015-03-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种有机薄膜晶体管的制备方法 |
US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
WO2015191293A1 (en) | 2014-06-11 | 2015-12-17 | Eastman Kodak Company | Devices having dielectric layers with thiosulfate-containing polymers |
WO2017013691A1 (ja) * | 2015-07-17 | 2017-01-26 | 株式会社Joled | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
KR102450399B1 (ko) * | 2015-10-06 | 2022-09-30 | 삼성전자주식회사 | 박막 트랜지스터, 그 제조 방법, 그리고 상기 박막 트랜지스터를 포함하는 전자 장치 |
KR20170059199A (ko) * | 2015-11-20 | 2017-05-30 | 삼성전자주식회사 | 유기 박막 트랜지스터의 제조방법, 유기 박막 트랜지스터, 그리고 박막의 표면 처리 장치 |
US11222959B1 (en) * | 2016-05-20 | 2022-01-11 | Hrl Laboratories, Llc | Metal oxide semiconductor field effect transistor and method of manufacturing same |
CN108417713A (zh) * | 2018-02-28 | 2018-08-17 | 北京大学深圳研究生院 | 一种含双层介电层的有机薄膜晶体管及其制备方法 |
CN108470830A (zh) * | 2018-03-26 | 2018-08-31 | 湖北大学 | 一种有机无机杂化薄膜晶体管及其制备方法 |
CN108493229A (zh) * | 2018-05-31 | 2018-09-04 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
US20220045274A1 (en) * | 2020-08-06 | 2022-02-10 | Facebook Technologies Llc | Ofets having organic semiconductor layer with high carrier mobility and in situ isolation |
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US5981970A (en) | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
US6215130B1 (en) | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
JP2001094107A (ja) | 1999-09-20 | 2001-04-06 | Hitachi Ltd | 有機半導体装置及び液晶表示装置 |
KR100739366B1 (ko) | 1999-12-20 | 2007-07-16 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 및 그 제조방법 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
EP2207217A1 (de) * | 2001-12-19 | 2010-07-14 | Merck Patent GmbH | Elektronische Geräte |
JP4136482B2 (ja) * | 2002-06-20 | 2008-08-20 | キヤノン株式会社 | 有機半導体素子、その製造方法および有機半導体装置 |
US6803262B2 (en) | 2002-10-17 | 2004-10-12 | Xerox Corporation | Process using self-organizable polymer |
US7098525B2 (en) * | 2003-05-08 | 2006-08-29 | 3M Innovative Properties Company | Organic polymers, electronic devices, and methods |
KR100995451B1 (ko) * | 2003-07-03 | 2010-11-18 | 삼성전자주식회사 | 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터 |
JP2005136383A (ja) * | 2003-10-09 | 2005-05-26 | Canon Inc | 有機半導体素子、その製造方法および有機半導体装置 |
KR101012950B1 (ko) | 2003-10-15 | 2011-02-08 | 삼성전자주식회사 | 유기 절연체 형성용 조성물 및 이를 이용하여 제조된 유기절연체 |
KR20050058062A (ko) | 2003-12-11 | 2005-06-16 | 삼성전자주식회사 | 유기절연막 형성용 조성물 및 이를 사용하여 제조된유기절연막 |
US7282735B2 (en) * | 2005-03-31 | 2007-10-16 | Xerox Corporation | TFT having a fluorocarbon-containing layer |
-
2005
- 2005-01-07 KR KR1020050001759A patent/KR101086159B1/ko active IP Right Grant
- 2005-12-08 US US11/296,704 patent/US7364940B2/en active Active
- 2005-12-22 DE DE602005004752T patent/DE602005004752T2/de active Active
- 2005-12-22 EP EP05257977A patent/EP1679754B1/de active Active
-
2006
- 2006-01-05 JP JP2006000318A patent/JP4902203B2/ja active Active
- 2006-01-09 CN CNB2006100036371A patent/CN100514696C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR101086159B1 (ko) | 2011-11-25 |
CN100514696C (zh) | 2009-07-15 |
US7364940B2 (en) | 2008-04-29 |
JP2006191115A (ja) | 2006-07-20 |
US20060151781A1 (en) | 2006-07-13 |
JP4902203B2 (ja) | 2012-03-21 |
DE602005004752T2 (de) | 2009-03-05 |
CN1825651A (zh) | 2006-08-30 |
EP1679754B1 (de) | 2008-02-13 |
EP1679754A1 (de) | 2006-07-12 |
KR20060081443A (ko) | 2006-07-13 |
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