CN100456517C - 轴向取代酞菁化合物用于制备有机薄膜晶体管的应用 - Google Patents
轴向取代酞菁化合物用于制备有机薄膜晶体管的应用 Download PDFInfo
- Publication number
- CN100456517C CN100456517C CNB2007100552581A CN200710055258A CN100456517C CN 100456517 C CN100456517 C CN 100456517C CN B2007100552581 A CNB2007100552581 A CN B2007100552581A CN 200710055258 A CN200710055258 A CN 200710055258A CN 100456517 C CN100456517 C CN 100456517C
- Authority
- CN
- China
- Prior art keywords
- phthalocyanine
- chlorine
- electronics
- hexafluoro
- phthalocyanine compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- -1 phthalocyanine compound Chemical class 0.000 title claims abstract description 31
- 239000010409 thin film Substances 0.000 title abstract description 7
- 239000000460 chlorine Substances 0.000 claims abstract description 62
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000003446 ligand Substances 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 3
- 239000001301 oxygen Substances 0.000 claims abstract description 3
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 46
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 claims description 13
- CDTKPYIJEPAMEH-UHFFFAOYSA-N [Cl].[In] Chemical compound [Cl].[In] CDTKPYIJEPAMEH-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- HUVXQFBFIFIDDU-UHFFFAOYSA-N aluminum phthalocyanine Chemical compound [Al+3].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 HUVXQFBFIFIDDU-UHFFFAOYSA-N 0.000 claims description 3
- XGDBOJRURXXJBF-UHFFFAOYSA-M fluoroindium Chemical compound [In]F XGDBOJRURXXJBF-UHFFFAOYSA-M 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- SGUBCGHCQOJHCM-UHFFFAOYSA-H hexafluoromanganese Chemical compound F[Mn](F)(F)(F)(F)F SGUBCGHCQOJHCM-UHFFFAOYSA-H 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical compound [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 7
- 230000005669 field effect Effects 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 23
- 230000037230 mobility Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910008449 SnF 2 Inorganic materials 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 4
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013065 commercial product Substances 0.000 description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012458 free base Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- PQIOSYKVBBWRRI-UHFFFAOYSA-N methylphosphonyl difluoride Chemical group CP(F)(F)=O PQIOSYKVBBWRRI-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- YRZZLAGRKZIJJI-UHFFFAOYSA-N oxyvanadium phthalocyanine Chemical compound [V+2]=O.C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 YRZZLAGRKZIJJI-UHFFFAOYSA-N 0.000 description 1
- VVOPUZNLRVJDJQ-UHFFFAOYSA-N phthalocyanine copper Chemical class [Cu].C12=CC=CC=C2C(N=C2NC(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2N1 VVOPUZNLRVJDJQ-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B47/00—Porphines; Azaporphines
- C09B47/04—Phthalocyanines abbreviation: Pc
- C09B47/045—Special non-pigmentary uses, e.g. catalyst, photosensitisers of phthalocyanine dyes or pigments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
本发明涉及轴向取代酞菁化合物作为有机薄膜晶体管的应用,其作为有机薄膜晶体管的源/漏电极间的半导体层。所述的轴向取代酞菁化合物的中心配体为三价以上的原子,轴向配体为氯、氟、氧可与轴向取代酞菁化合物的中心配体连接。所述的轴向取代酞菁化合物在有机衬底上采用气相沉积方法容易制备高品质的结晶薄模。这些结晶薄膜得载流子迁移率高,能级丰富,且性能稳定,容易集成加工。该有机薄膜晶体管的场效应迁移率在0.01cm2/Vs以上,开关比大于105。
Description
技术领域
本发明涉及轴向取代酞菁化合物用于制备有机薄膜晶体管的应用。
背景技术
高载流子迁移率性质的有机半导体在信息显示、集成电路、光伏电池和传感器等方面具有应用前景。然而,目前大多数有机半导体均表现出对环境的敏感性,这给有机电子器件的集成加工和应用带来了很大的困难。美国专利5,969,376公开了采用平面的金属酞菁[酞菁铜(CuPc),酞菁锌(ZnPc),自由酞菁(H2Pc),酞菁锡(SnPc)]的p-沟道有机薄膜晶体管;1998年美国化学会志(J.Am.Chem.Soc.1998,120,207-208)报道了采用平面的金属酞菁[十六氟代金属酞菁(F16MPc),十六氯代酞菁铁(Cl16FePc),八氰基取代酞菁铜((CN)8CuPc)]的n-沟道有机薄膜晶体管;2006年应用物理快报(Appl.Phys.Lett.89,163516(2006))报道了采用平面的金属酞菁[十六氯代酞菁铜(Cl16CuPc)]的n-沟道有机薄膜晶体管;中国专利02129458.5公开了采用非平面的金属酞菁[酞菁氧钛(TiOPc),酞菁氧钒(VOPc)]的p-沟道有机薄膜晶体管,这些有机半导体的迁移率达到了10-3cm2/Vs以上,且对环境不敏感,工作稳定,适合集成加工。为进一步满足有机电子器件发展的需要,半导体的载流子迁移率和电子结构有待进一步提高与丰富。
发明内容
本发明的目的是提供轴向取代酞菁化合物用于制备有机薄膜晶体管的应用,涉及的轴向取代酞菁化合物用于制备有机薄膜晶体管的源电极(5)和漏电极(6)下方的半导体层。采用轴向取代酞菁化合物作为半导体层的机薄膜晶体管的场效应迁移率在0.01cm2/Vs以上,开关比大于105。
轴向取代酞菁化合物的分子结构示意图如图1所示。(a)代表轴向取代酞菁,M代表中心取代配体,L、L代表轴向配体,其中L和L’可以相同或不相同;(b)苯基位取代位:1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25的取代原子可为氟(F),氯(Cl);如十六氯代酞菁氯铝(Cl16AlClPc)。
轴向取代酞菁化合物的中心配体为三价以上的原子,轴向配体为氯(Cl)、氟(F)、氧(O)可与轴向取代酞菁化合物的中心配体连接。
发明原理是中心配体和轴向配体能够调节轴向取代酞菁的电子结构。
所述的轴向取代酞菁化合物是:酞菁铟氟(InFPc),酞菁钛二氟(TiF2Pc),酞菁锡二氟(SnF2Pc),酞菁铁氯(FeClPc),酞菁铟氯(InClPc),酞菁镓氯(GaClPc),酞菁锰氯(MnClPc),酞菁氧锡(SnOPc),酞菁钛二氯(TiCl2Pc),酞菁锡二氯(SnCl2Pc),酞菁锗二氯(GeCl2Pc),十六氟代酞菁氧钛(F16TiOPc),十六氯代酞菁氧钛(Cl16TiOPc),十六氟代酞菁氧钒(F16VOPc),十六氯代酞菁氧钒(Cl16VOPc),十六氟代酞菁铟氯(F16InClPc),十六氯代酞菁铟氯(Cl16InClPc),十六氟代酞菁锡二氯(F16SnCl2Pc),十六氯代酞菁锡二氯(Cl16SnCl2Pc),十六氟代酞菁钛二氯(F16TiCl2Pc),十六氟代酞菁锰氯(F16MnClPc),十六氟代酞菁铝氯(F16AlClPc)和十六氯代酞菁氯铝(Cl16AlClPc)中的一种。
所述的有机薄膜晶体管的源电极(5)和漏电极(6)下方的半导体层(7)是轴向取代酞菁化合物,其厚度在10-50纳米之间。
所述的轴向取代酞菁化合物在有机衬底上采用气相沉积方法容易制备高品质的结晶薄膜。这些结晶薄膜得载流子迁移率高,能级丰富,且性能稳定,容易集成加工。采用轴向取代酞菁化合物作为半导体层的机薄膜晶体管的场效应迁移率在0.01cm2/Vs以上,开关比大于105。
采用轴向取代酞菁化合物作半导体层的机薄膜晶体管的结构如图2所示。其中,(1)衬底,(2)栅极,(3)绝缘栅层,(5),(6)源/漏电极,(7)轴向取代酞菁化合物的半导体层。
附图说明
图1轴向取代酞菁化合物的分子结构式。(a)代表轴向取代酞菁,M代表中心取代配体,L、L代表轴向配体,其中L和L’可以相同或不相同;如酞菁钛二氯(TiCl2Pc),(b)苯基位取代位:1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25的取代原子可为氟(F),氯(Cl);如十六氯代酞菁氯铝(Cl16AlClPc)。
图2有机薄膜晶体管结构示意图,其中,(1)衬底,(2)栅极,(3)绝缘栅层,(5),(6)源/漏电极,(7)轴向取代酞菁化合物的半导体层。
图3TiCl2Pc转移特性曲线。
具体实施方式
下面结合附图描述本发明。图2是采用本发明有机半导体的顶接触型薄膜晶体管的实施例结构。
实施例1:
实施例所用五氧化二钽(Ta2O5)、二氧化硅(SiO2)和三氧化二铝(Al2O3)靶材,金(Au)和铝(Al)金属电极是商业产品,直接使用。玻璃基板和塑料基板是商业产品,经过清洗后使用。实施例所用轴向取代酞菁化合物酞菁铁氯(FeClPc),酞菁钛二氯(TiCl2Pc),酞菁锡二氯(SnCl2Pc),酞菁铟氯(InClPc),酞菁锰氯(MnClPc),酞菁镓氯(GaClPc),酞菁氧锡(SnOPc)是商业产品,经过纯化后使用。聚甲基丙烯酸甲酯(PMMA)是商业产品,配成3-0.5w%丁酮溶液使用。
在7059玻璃衬底或柔性塑料衬底(1)上用射频磁控溅射方法镀上一层金属铬(Cr)膜,厚度约200纳米,并光刻成栅极(2);在栅极(2)上用磁控溅射一层五氧化二钽(Ta2O5)、二氧化硅(SiO2)或三氧化二铝(Al2O3)作为绝缘栅层(3),厚度约100纳米,在绝缘栅层(3)表面旋涂约50纳米的PMMA;然后采用分子气相沉积方法在25至250℃温度之间生长厚度约10至30纳米厚的半导体(7),再沉积厚度约20-50纳米金(Au)或铝(Al)源/漏电极(5)和(6)。
薄膜晶体管器件的源/漏电极、表面修饰层,以及薄膜晶体管器件的载流子迁移率、开关电流比性质列于表1中。
表1.薄膜晶体管器件的源/漏电极以及薄膜晶体管器件的载流子迁移率(cm2/Vs)、载流子类型和开关电流比性质
有机半导体 | 源/漏电极 | 载流子迁移率 | 载流子类型 | 开关电流比 |
TiCl<sub>2</sub>Pc | Au | 0.15 | 空穴 | 10<sup>5</sup> |
SnCl<sub>2</sub>Pc | Al | 0.16 | 电子 | 10<sup>5</sup> |
SnCl<sub>2</sub>Pc | Au | 0.14 | 电子 | 10<sup>5</sup> |
FeClPc | Au | 0.011 | 空穴 | 10<sup>5</sup> |
InClPc | Au | 0.025 | 空穴 | 10<sup>5</sup> |
MnClPc | Au | 0.011 | 空穴 | 10<sup>5</sup> |
GaClPc | Au | 0.010 | 空穴 | 10<sup>5</sup> |
SnOPc | Al | 0.017 | 电子 | 10<sup>5</sup> |
SnOPc | Au | 0.020 | 电子 | 10<sup>5</sup> |
实施例2:
实施例所用五氧化二钽(Ta2O5)、二氧化硅(SiO2)和三氧化二铝(Al2O3)靶材,金(Au)和铝(Al)金属电极是商业产品,直接使用。玻璃基板和塑料基板是商业产品,经过清洗后使用。实施例所用酞菁钛二氟(TiF2Pc),酞菁锡二氟(SnF2Pc),酞菁铟氟(InFPc),酞菁锗二氯(GeCl2Pc),十六氟代酞菁氧钛(F16TiOPc),十六氟代酞菁氧钒(F16VOPc),十六氟代酞菁铟氯(F16InClPc),十六氟代酞菁锰氯(F16MnClPc),十六氟代酞菁锡二氯(F16SnCl2Pc),十六氟代钛二氯(F16TiCl2Pc),十六氟代酞菁铝氯(F16AlClPc),十六氯代酞菁氯铝(Cl16AlClPc),十六氯代酞菁锡二氯(Cl16SnCl2Pc),十六氯代酞菁氧钛(Cl16TiOPc),十六氯代酞菁氧钒(Cl16VOPc),十六氯代酞菁铟氯(Cl16InClPc),按文献(Inorg.Chem.1962,1,331-333;InorganicaChimica Acta 1999,293,80-87)合成。
在7059玻璃衬底或柔性塑料衬底(1)上用射频磁控溅射方法镀上一层金属铬(Cr)膜,厚度约200纳米,并光刻成栅极(2);在栅极上用磁控溅射一层五氧化二钽(Ta2O5)、二氧化硅(SiO2)或三氧化二铝(Al2O3)作为绝缘栅层(3),厚度约100纳米,在绝缘栅层(3)表面修饰OTS或真空沉积6P;然后采用分子气相沉积方法在25至250℃温度之间生长厚度约10至30纳米厚的半导体(7),再沉积厚度约20-50纳米金(Au)或铝(Al)源/漏电极(5)和(6)。
薄膜晶体管器件的源/漏电极、表面修饰层,以及薄膜晶体管器件的载流子迁移率、开关电流比性质列于表2中。
表2.薄膜晶体管器件的源/漏电极、表面修饰层,以及薄膜晶体管器件的载流子迁移率(cm2/Vs)、载流子类型和开关电流比性质
有机半导体 | 源/漏电极 | 表面修饰层 | 载流子迁移率 | 载流子类型 | 开关电流比 |
F<sub>16</sub>AlClPc | Al | OTS | 0.012 | 电子 | 10<sup>5</sup> |
F<sup>16</sup>AlClPc | Al | 6P | 0.023 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>AlClPc | Au | OTS | 0.010 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>AlClPc | Au | 6P | 0.017 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>MnClPc | Al | OTS | 0.016 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>MnClPc | Al | 6P | 0.014 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>MnClPc | Au | OTS | 0.012 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>MnClPc | Au | 6P | 0.021 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>InClPc | Al | OTS | 0.015 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>InClPc | Al | 6P | 0.21 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>InClPc | Au | OTS | 0.012 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>InClPc | Au | 6P | 0.27 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>SnCl<sub>2</sub>Pc | Al | OTS | 0.010 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>SnCl<sub>2</sub>Pc | Al | 6P | 0.11 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>SnCl<sub>2</sub>Pc | Au | OTS | 0.013 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>SnCl<sub>2</sub>Pc | Au | 6P | 0.24 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>TiCl<sub>2</sub>Pc | Al | OTS | 0.011 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>TiCl<sub>2</sub>Pc | Al | 6P | 0.021 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>TiCl<sub>2</sub>Pc | Au | OTS | 0.017 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>TiCl<sub>2</sub>Pc | Au | 6P | 0.26 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>TiOPc | Al | OTS | 0.11 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>TiOPc | Al | 6P | 0.20 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>TiOPc | Au | OTS | 0.21 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>TiOPc | Au | 6P | 0.43 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>VOPc | Al | OTS | 0.12 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>VOPc | Al | 6P | 0.17 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>VOPc | Au | OTS | 0.23 | 电子 | 10<sup>5</sup> |
F<sub>16</sub>VOPc | Au | 6P | 0.39 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>SnCl<sub>2</sub>Pc | Al | OTS | 0.012 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>SnCl<sub>2</sub>Pc | Al | 6P | 0.017 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>SnCl<sub>2</sub>Pc | Au | OTS | 0.023 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>SnCl<sub>2</sub>Pc | Au | 6P | 0.17 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>AlClPc | Al | OTS | 0.014 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>AlClPc | Al | 6P | 0.022 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>AlClPc | Au | OTS | 0.013 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>AlClPc | Au | 6P | 0.017 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>InClPc | Al | OTS | 0.015 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>InClPc | Al | 6P | 0.019 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>InClPc | Au | OTS | 0.16 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>InClPc | Au | 6P | 0.21 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>VOPc | Al | OTS | 0.010 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>VOPc | Al | 6P | 0.073 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>VOPc | Au | OTS | 0.042 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>VOPc | Au | 6P | 0.37 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>TiOPc | Al | OTS | 0.012 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>TiOPc | Al | 6P | 0.012 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>TiOPc | Au | OTS | 0.016 | 电子 | 10<sup>5</sup> |
Cl<sub>16</sub>TiOPc | Au | 6P | 0.023 | 电子 | 10<sup>5</sup> |
SnF<sub>2</sub>Pc | Al | OTS | 0.010 | 电子 | 10<sup>5</sup> |
SnF<sub>2</sub>Pc | Al | 6P | 0.018 | 电子 | 10<sup>5</sup> |
SnF<sub>2</sub>Pc | Au | OTS | 0.051 | 电子 | 10<sup>5</sup> |
SnF<sub>2</sub>Pc | Au | 6P | 0.074 | 电子 | 10<sup>5</sup> |
TiF<sub>2</sub>Pc | Al | OTS | 0.012 | 电子 | 10<sup>5</sup> |
TiF<sub>2</sub>Pc | Al | 6P | 0.025 | 电子 | 10<sup>5</sup> |
TiF<sub>2</sub>Pc | Au | OTS | 0.042 | 电子 | 10<sup>5</sup> |
TiF<sub>2</sub>Pc | Au | 6P | 0.085 | 电子 | 10<sup>5</sup> |
InFPc | Al | OTS | 0.017 | 电子 | 10<sup>5</sup> |
InFPc | Al | 6P | 0.024 | 电子 | 10<sup>5</sup> |
InFPc | Au | OTS | 0.031 | 电子 | 10<sup>5</sup> |
InFPc | Au | 6P | 0.077 | 电子 | 10<sup>5</sup> |
GeCl<sub>2</sub>Pc | Au | OTS | 0.061 | 空穴 | 10<sup>5</sup> |
GeCl<sub>2</sub>Pc | Au | 6P | 0.090 | 空穴 | 10<sup>5</sup> |
本发明不限于上述实施例。一般来说,本发明所公开的有机晶体管可以加工形成二维和三维的集成器件中的元件。这些集成器件能够应用在柔性集成电路、有源矩阵显示等方面。使用基于本发明的有机薄膜晶体管元件可以低温加工。
Claims (3)
2、按权利要求1所述的轴向取代酞菁化合物用于制备有机薄膜晶体管的应用,其特征在于,所述的轴向取代酞菁化合物是酞菁铟氟,酞菁钛二氟,酞菁锡二氟,酞菁铁氯,酞菁铟氯,酞菁镓氯,酞菁锰氯,酞菁氧锡,酞菁钛二氯,酞菁锡二氯,酞菁锗二氯,十六氟代酞菁氧钛,十六氯代酞菁氧钛,十六氟代酞菁氧钒,十六氯代酞菁氧钒,十六氟代酞菁铟氯,十六氯代酞菁铟氯,十六氟代酞菁锡二氯,十六氯代酞菁锡二氯,十六氟代酞菁钛二氯,十六氟代酞菁锰氯,十六氟代酞菁铝氯和十六氯代酞菁氯铝中的一种。
3、按权利要求1所述的有机薄膜晶体管的源电极(5)和漏电极(6)下方的半导体层(7)是轴向取代酞菁化合物层,其厚度在10-50纳米之间。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100552581A CN100456517C (zh) | 2007-01-23 | 2007-01-23 | 轴向取代酞菁化合物用于制备有机薄膜晶体管的应用 |
US12/009,526 US7871855B2 (en) | 2007-01-23 | 2008-01-17 | Use of axial substituted phthalocyanine compound for preparing organic thin-film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100552581A CN100456517C (zh) | 2007-01-23 | 2007-01-23 | 轴向取代酞菁化合物用于制备有机薄膜晶体管的应用 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101005115A CN101005115A (zh) | 2007-07-25 |
CN100456517C true CN100456517C (zh) | 2009-01-28 |
Family
ID=38704115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007100552581A Expired - Fee Related CN100456517C (zh) | 2007-01-23 | 2007-01-23 | 轴向取代酞菁化合物用于制备有机薄膜晶体管的应用 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7871855B2 (zh) |
CN (1) | CN100456517C (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101260566B (zh) * | 2007-12-17 | 2011-09-14 | 中国科学院长春应用化学研究所 | 盘状分子有机半导体构成的有机超晶格材料及其制备方法 |
US8929054B2 (en) * | 2010-07-21 | 2015-01-06 | Cleanvolt Energy, Inc. | Use of organic and organometallic high dielectric constant material for improved energy storage devices and associated methods |
CN102827228B (zh) * | 2012-08-28 | 2015-03-04 | 福州大学 | 一种胞苷衍生物修饰的硅酞菁及其制备方法和应用 |
CN102827227B (zh) * | 2012-08-28 | 2015-04-15 | 福州大学 | 一种腺苷衍生物修饰的硅酞菁及其制备方法和应用 |
WO2014043860A1 (zh) * | 2012-09-19 | 2014-03-27 | 中国科学院长春应用化学研究所 | 一种可溶性酞菁化合物、其制备方法及一种有机薄膜晶体管 |
CN102863448B (zh) * | 2012-09-19 | 2015-10-07 | 中国科学院长春应用化学研究所 | 一种可溶性酞菁化合物、其制备方法及一种有机薄膜晶体管 |
EP3063233A1 (en) * | 2013-10-31 | 2016-09-07 | SABIC Global Technologies B.V. | Process for making axially fluorinated-phthalocyanines and their use in photovoltaic applications |
CN106243114B (zh) * | 2016-07-28 | 2018-08-17 | 福州大学 | 分子靶向氮杂芳香环轴向取代酞菁配合物及制备方法 |
US10611786B2 (en) * | 2017-10-09 | 2020-04-07 | The Board Of Trustees Of The University Of Illinois | Manganese (III) catalyzed C—H aminations |
US10961266B2 (en) | 2018-09-13 | 2021-03-30 | The Board Of Trustees Of The University Of Illinois | Chemoselective methylene hydroxylation in aromatic molecules |
CN113956261A (zh) * | 2021-09-16 | 2022-01-21 | 昆明学院 | 新晶体结构氯化酞菁镓纳米带及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1719636A (zh) * | 2005-05-20 | 2006-01-11 | 中国科学院长春应用化学研究所 | 含有非反应活性缓冲层的有机薄膜晶体管及其制作方法 |
US20060131564A1 (en) * | 2004-12-17 | 2006-06-22 | Deepak Shukla | Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors |
CN1825651A (zh) * | 2005-01-07 | 2006-08-30 | 三星电子株式会社 | 包括氟类聚合物薄膜的有机薄膜晶体管及其制备方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5969376A (en) * | 1996-08-23 | 1999-10-19 | Lucent Technologies Inc. | Organic thin film transistor having a phthalocyanine semiconductor layer |
CN100364108C (zh) | 2002-08-28 | 2008-01-23 | 中国科学院长春应用化学研究所 | 含有有机半导体的夹心型场效应晶体管及制作方法 |
CN100492697C (zh) * | 2003-08-22 | 2009-05-27 | 松下电器产业株式会社 | 纵型有机fet及其制造方法 |
-
2007
- 2007-01-23 CN CNB2007100552581A patent/CN100456517C/zh not_active Expired - Fee Related
-
2008
- 2008-01-17 US US12/009,526 patent/US7871855B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060131564A1 (en) * | 2004-12-17 | 2006-06-22 | Deepak Shukla | Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors |
CN1825651A (zh) * | 2005-01-07 | 2006-08-30 | 三星电子株式会社 | 包括氟类聚合物薄膜的有机薄膜晶体管及其制备方法 |
CN1719636A (zh) * | 2005-05-20 | 2006-01-11 | 中国科学院长春应用化学研究所 | 含有非反应活性缓冲层的有机薄膜晶体管及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US7871855B2 (en) | 2011-01-18 |
CN101005115A (zh) | 2007-07-25 |
US20080177060A1 (en) | 2008-07-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100456517C (zh) | 轴向取代酞菁化合物用于制备有机薄膜晶体管的应用 | |
Kim et al. | Effect of metallic composition on electrical properties of solution-processed indium-gallium-zinc-oxide thin-film transistors | |
CN101262041B (zh) | 可溶性四烷基轴向取代酞菁化合物在制备有机薄膜晶体管中的应用 | |
Giri et al. | Tuning charge transport in solution-sheared organic semiconductors using lattice strain | |
Avis et al. | Effect of channel layer thickness on the performance of indium–zinc–tin oxide thin film transistors manufactured by inkjet printing | |
KR100706090B1 (ko) | 유기 박막 트랜지스터 및 그 제조 방법 | |
Oh et al. | Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on AlOx dielectric | |
CN101013739A (zh) | 有机半导体晶体薄膜及弱取向外延生长制备方法和应用 | |
Kim et al. | Highly dense and stable p-type thin-film transistor based on atomic layer deposition SnO fabricated by two-step crystallization | |
CN105489486A (zh) | 一种基于超薄氧化镁高k介电层薄膜晶体管的制备方法 | |
US6806492B2 (en) | Heterojunction organic semiconductor field effect transistor (FET) with a gate insulation layer and manufacturing process thereof | |
Deng et al. | Precise positioning of organic semiconductor single crystals with two-component aligned structure through 3D wettability-induced sequential assembly | |
EP2518075B1 (en) | Induced layer material for preparing non-planar metal phthalocyanine weak epitaxy growth thin film | |
Kong et al. | Controlled morphology of self-assembled microstructures via solvent-vapor annealing temperature and ambipolar OFET performance based on a tris (phthalocyaninato) europium derivative | |
US6914258B2 (en) | Field effect transistor in sandwich configuration having organic semiconductors and manufacturing process thereof | |
Li et al. | Deposition-pressure-induced optimization of molecular packing for high-performance organic thin-film transistors based on copper phthalocyanine | |
Dou et al. | Influences of ion-induced defects on growth of copper-phthalocyanine film on graphene substrates | |
CN102208364B (zh) | 与卷对卷技术兼容的大面积有机薄膜晶体管列阵制备方法 | |
CN101425563A (zh) | 各向异性有机场效应管的制备方法 | |
CN104993053B (zh) | 一种改善有机薄膜晶体管性能的方法 | |
CN108511530B (zh) | 氮化碳薄膜场效应晶体管 | |
CN101260566B (zh) | 盘状分子有机半导体构成的有机超晶格材料及其制备方法 | |
CN110233204B (zh) | 一种有机薄膜晶体管及其制备方法 | |
CN102560632B (zh) | 用于非平面酞菁薄膜弱外延生长的固熔体诱导层 | |
Wang et al. | Realization of uniform large-area pentacene thin film transistor arrays by roller vacuum thermal evaporation |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180807 Address after: 130000 Chuanyu Jingyue Development Zone, Changchun City, Jilin Province Patentee after: CHANGCHUN FLEXIBLE DISPLAY TECHNOLOGY Co.,Ltd. Address before: 130022 No. 5625 Renmin Street, Jilin, Changchun Patentee before: CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY CHINESE ACADEMY OF SCIENCES |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090128 |