DE602004012793D1 - Chemisch-mechanisches Polierverfahren für STI - Google Patents

Chemisch-mechanisches Polierverfahren für STI

Info

Publication number
DE602004012793D1
DE602004012793D1 DE602004012793T DE602004012793T DE602004012793D1 DE 602004012793 D1 DE602004012793 D1 DE 602004012793D1 DE 602004012793 T DE602004012793 T DE 602004012793T DE 602004012793 T DE602004012793 T DE 602004012793T DE 602004012793 D1 DE602004012793 D1 DE 602004012793D1
Authority
DE
Germany
Prior art keywords
sti
chemical
mechanical polishing
polishing process
mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004012793T
Other languages
English (en)
Other versions
DE602004012793T2 (de
Inventor
Masayuki Hattori
Nobuo Kawahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Publication of DE602004012793D1 publication Critical patent/DE602004012793D1/de
Application granted granted Critical
Publication of DE602004012793T2 publication Critical patent/DE602004012793T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE602004012793T 2003-05-21 2004-05-19 Chemisch-mechanisches Polierverfahren für STI Expired - Lifetime DE602004012793T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003144034A JP2004349426A (ja) 2003-05-21 2003-05-21 Ｓｔｉ用化学機械研磨方法
JP2003144034 2003-05-21

Publications (2)

Publication Number Publication Date
DE602004012793D1 true DE602004012793D1 (de) 2008-05-15
DE602004012793T2 DE602004012793T2 (de) 2009-04-30

Family

ID=33095450

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004012793T Expired - Lifetime DE602004012793T2 (de) 2003-05-21 2004-05-19 Chemisch-mechanisches Polierverfahren für STI

Country Status (7)

Country Link
US (1) US7163448B2 (de)
EP (1) EP1479741B1 (de)
JP (1) JP2004349426A (de)
KR (1) KR101060441B1 (de)
CN (1) CN100457394C (de)
DE (1) DE602004012793T2 (de)
TW (1) TWI311342B (de)

Families Citing this family (34)

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US20050096246A1 (en) 2003-11-04 2005-05-05 Johnson Robert C. Solvent compositions containing chlorofluoroolefins
US20050121969A1 (en) * 2003-12-04 2005-06-09 Ismail Emesh Lubricant for wafer polishing using a fixed abrasive pad
JP4546071B2 (ja) * 2003-12-10 2010-09-15 パナソニック株式会社 半導体装置の製造方法
CN1985361A (zh) * 2004-07-23 2007-06-20 日立化成工业株式会社 Cmp研磨剂以及衬底的研磨方法
US20060088976A1 (en) * 2004-10-22 2006-04-27 Applied Materials, Inc. Methods and compositions for chemical mechanical polishing substrates
US20060097219A1 (en) * 2004-11-08 2006-05-11 Applied Materials, Inc. High selectivity slurry compositions for chemical mechanical polishing
EP1836268A4 (de) * 2004-12-13 2009-12-23 Planar Solutions Llc Auf kolloidaler kieselsäure beruhende aufschlämmung zum chemisch-mechanischen polieren
US7291280B2 (en) 2004-12-28 2007-11-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride
KR101275964B1 (ko) * 2005-02-23 2013-06-14 제이에스알 가부시끼가이샤 화학 기계 연마방법
JP4759298B2 (ja) * 2005-03-30 2011-08-31 株式会社フジミインコーポレーテッド 単結晶表面用の研磨剤及び研磨方法
TWI338329B (en) * 2005-07-11 2011-03-01 Fujitsu Semiconductor Ltd Manufacture of semiconductor device with cmp
JP5345397B2 (ja) * 2005-09-26 2013-11-20 プラナー ソリューションズ エルエルシー 化学機械研磨応用で使用するための超純度コロイド状シリカ
KR100710804B1 (ko) * 2006-02-03 2007-04-23 삼성전자주식회사 반도체 소자의 평탄화 방법
KR101067095B1 (ko) * 2006-03-20 2011-09-22 미쓰이 가가쿠 가부시키가이샤 연마용 조성물
SG139699A1 (en) * 2006-08-02 2008-02-29 Fujimi Inc Polishing composition and polishing process
KR100852242B1 (ko) * 2006-08-16 2008-08-13 삼성전자주식회사 화학 기계적 연마용 슬러리 조성물, 이를 이용한 연마 방법및 반도체 메모리 소자의 제조 방법
KR100814416B1 (ko) * 2006-09-28 2008-03-18 삼성전자주식회사 고 평탄화 슬러리 조성물 및 이를 이용한 화학 기계적 연마방법
KR100829598B1 (ko) * 2006-11-16 2008-05-14 삼성전자주식회사 고 평탄화 화학 기계적 연마 방법 및 반도체 소자의제조방법
JP4301305B2 (ja) 2007-02-16 2009-07-22 ソニー株式会社 基体研磨方法、半導体装置の製造方法
US7696095B2 (en) * 2007-02-23 2010-04-13 Ferro Corporation Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide
JP2008290169A (ja) 2007-05-23 2008-12-04 Tdk Corp アルミナ膜研磨用組成物およびそれを用いる化学機械研磨方法
US8404009B2 (en) * 2007-10-29 2013-03-26 Kao Corporation Polishing composition for hard disk substrate
CN101451049A (zh) * 2007-11-30 2009-06-10 安集微电子（上海）有限公司 一种化学机械抛光液
US20090197510A1 (en) * 2008-02-01 2009-08-06 Shohei Shima Polishing method and apparatus
JP2010135472A (ja) * 2008-12-03 2010-06-17 Fujifilm Corp 研磨用組成物および研磨方法
US8497210B2 (en) * 2010-10-04 2013-07-30 International Business Machines Corporation Shallow trench isolation chemical mechanical planarization
JP2012146975A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
JP2013084836A (ja) * 2011-10-12 2013-05-09 Toshiba Corp Ｃｍｐ方法及び半導体装置の製造方法
JP5957292B2 (ja) * 2012-05-18 2016-07-27 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
US8748317B2 (en) 2012-08-03 2014-06-10 Infineon Technologies Austria Ag Method of manufacturing a semiconductor device including a dielectric structure
KR102003276B1 (ko) * 2013-02-14 2019-07-24 삼성전자 주식회사 반도체 소자 제조 방법
CN105451940B (zh) * 2013-08-09 2018-12-11 福吉米株式会社 研磨完的研磨对象物的制造方法及研磨用组合物试剂盒
JP6694674B2 (ja) * 2014-11-07 2020-05-20 株式会社フジミインコーポレーテッド 研磨方法およびポリシング用組成物
CN117904636B (zh) * 2024-01-19 2024-07-02 揭阳市潜信不锈钢制品有限公司 一种五金餐具高效抛光工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11181403A (ja) * 1997-12-18 1999-07-06 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
JPH11256141A (ja) * 1998-03-12 1999-09-21 Sony Corp 研磨スラリーおよび研磨方法
US6326309B2 (en) 1998-06-30 2001-12-04 Fujitsu Limited Semiconductor device manufacturing method
US6638143B2 (en) * 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
TW572980B (en) 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
JP4123685B2 (ja) 2000-05-18 2008-07-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP2002124493A (ja) * 2000-10-13 2002-04-26 Mitsubishi Materials Silicon Corp 半導体ウェーハの研磨装置
US6617487B2 (en) * 2001-08-15 2003-09-09 Su Jen Chou Water absorbable cloth member for surgical operation purposes
CN1384166A (zh) * 2002-05-16 2002-12-11 深圳市纳科实业有限公司 用于存储器硬盘磁头表面抛光的抛光组合物及其抛光方法
US20050287931A1 (en) * 2002-10-25 2005-12-29 Showa Denko K.K. Polishing slurry and polished substrate
US6964600B2 (en) * 2003-11-21 2005-11-15 Praxair Technology, Inc. High selectivity colloidal silica slurry

Also Published As

Publication number Publication date
CN1572424A (zh) 2005-02-02
US20040235396A1 (en) 2004-11-25
KR101060441B1 (ko) 2011-08-29
EP1479741A2 (de) 2004-11-24
EP1479741B1 (de) 2008-04-02
CN100457394C (zh) 2009-02-04
US7163448B2 (en) 2007-01-16
TWI311342B (en) 2009-06-21
JP2004349426A (ja) 2004-12-09
EP1479741A3 (de) 2005-01-05
TW200426935A (en) 2004-12-01
DE602004012793T2 (de) 2009-04-30
KR20040100964A (ko) 2004-12-02

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