DE60137885D1 - Halogenplasma beständiger Teil und Herstellungsverfahren dafür - Google Patents

Halogenplasma beständiger Teil und Herstellungsverfahren dafür

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Publication number
DE60137885D1
DE60137885D1 DE60137885T DE60137885T DE60137885D1 DE 60137885 D1 DE60137885 D1 DE 60137885D1 DE 60137885 T DE60137885 T DE 60137885T DE 60137885 T DE60137885 T DE 60137885T DE 60137885 D1 DE60137885 D1 DE 60137885D1
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Germany
Prior art keywords
manufacturing process
resistant part
plasma resistant
halogen plasma
halogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60137885T
Other languages
English (en)
Inventor
Hirotake Yamada
Yuji Katsuda
Tsuneaki Ohashi
Masaaki Masuda
Masashi Harada
Hiroyuki Iwasaki
Shigenori Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000376151A external-priority patent/JP4540221B2/ja
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE60137885D1 publication Critical patent/DE60137885D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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Families Citing this family (338)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3510993B2 (ja) * 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
TW514996B (en) * 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
EP1642994B8 (de) * 2000-06-29 2017-04-19 Shin-Etsu Chemical Co., Ltd. Pulver aus Oxyden der seltenen Erden für ein thermisches Sprühbeschichtungsverfahren.
JP2002356387A (ja) * 2001-03-30 2002-12-13 Toshiba Ceramics Co Ltd 耐プラズマ性部材
JP4277973B2 (ja) * 2001-07-19 2009-06-10 日本碍子株式会社 イットリア−アルミナ複合酸化物膜の製造方法、イットリア−アルミナ複合酸化物膜および耐蝕性部材
JP4663927B2 (ja) * 2001-08-29 2011-04-06 信越化学工業株式会社 希土類含有酸化物部材
US20080213496A1 (en) * 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
US20080264564A1 (en) * 2007-04-27 2008-10-30 Applied Materials, Inc. Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas
US7479304B2 (en) * 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
US6780787B2 (en) * 2002-03-21 2004-08-24 Lam Research Corporation Low contamination components for semiconductor processing apparatus and methods for making components
JP2003277051A (ja) * 2002-03-22 2003-10-02 Ngk Insulators Ltd イットリア−アルミナ複合酸化物膜を有する積層体、イットリア−アルミナ複合酸化物膜、耐蝕性部材、耐蝕性膜およびイットリア−アルミナ複合酸化物膜の製造方法
US7026009B2 (en) * 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7137353B2 (en) 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US6798519B2 (en) * 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7250220B1 (en) * 2002-10-03 2007-07-31 Tosoh Set, Inc. Bond strength of coatings to ceramic components
JP4096692B2 (ja) * 2002-10-16 2008-06-04 株式会社デンソー ガスセンサ素子の製造方法
US7964085B1 (en) 2002-11-25 2011-06-21 Applied Materials, Inc. Electrochemical removal of tantalum-containing materials
TW200423195A (en) 2002-11-28 2004-11-01 Tokyo Electron Ltd Internal member of a plasma processing vessel
DE602004011185T2 (de) 2003-02-12 2008-12-24 Ngk Insulators, Ltd., Nagoya Plasmareaktionsgefäss und herstellungsverfahren dafür
JP2004332081A (ja) * 2003-05-12 2004-11-25 Shin Etsu Chem Co Ltd 耐プラズマ部材及びその製造方法
JP2005008483A (ja) * 2003-06-19 2005-01-13 Shin Etsu Chem Co Ltd 被覆部材及びその製造方法
JP2005041746A (ja) * 2003-07-24 2005-02-17 Ngk Insulators Ltd セラミック焼結体
US7329467B2 (en) * 2003-08-22 2008-02-12 Saint-Gobain Ceramics & Plastics, Inc. Ceramic article having corrosion-resistant layer, semiconductor processing apparatus incorporating same, and method for forming same
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7220497B2 (en) * 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
JP4606121B2 (ja) * 2004-01-29 2011-01-05 京セラ株式会社 耐食膜積層耐食性部材およびその製造方法
US20050215059A1 (en) * 2004-03-24 2005-09-29 Davis Ian M Process for producing semi-conductor coated substrate
KR100953707B1 (ko) * 2004-08-24 2010-04-19 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 반도체 프로세싱 부품 및 이를 사용하는 반도체 제조방법
KR101226120B1 (ko) * 2004-10-26 2013-01-24 쿄세라 코포레이션 내식성 부재 및 그 제조방법
US7579067B2 (en) 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7554052B2 (en) * 2005-07-29 2009-06-30 Applied Materials, Inc. Method and apparatus for the application of twin wire arc spray coatings
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
JP2007115973A (ja) * 2005-10-21 2007-05-10 Shin Etsu Chem Co Ltd 耐食性部材
JP4996868B2 (ja) * 2006-03-20 2012-08-08 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US7479464B2 (en) 2006-10-23 2009-01-20 Applied Materials, Inc. Low temperature aerosol deposition of a plasma resistive layer
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
CN103102157A (zh) * 2007-04-27 2013-05-15 应用材料公司 降低暴露于含卤素等离子体表面的腐蚀速率的装置和方法
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8367227B2 (en) * 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
US8138060B2 (en) 2007-10-26 2012-03-20 Shin-Etsu Chemical Co., Ltd. Wafer
US20090214825A1 (en) * 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
US20090261065A1 (en) * 2008-04-18 2009-10-22 Lam Research Corporation Components for use in a plasma chamber having reduced particle generation and method of making
JP2010052384A (ja) * 2008-08-29 2010-03-11 Ricoh Co Ltd 画像形成装置、印刷制御方法、及びプログラム
KR20110088549A (ko) * 2008-11-04 2011-08-03 프랙스에어 테크놀로지, 인코포레이티드 반도체 응용을 위한 열 분무 코팅
US10157731B2 (en) * 2008-11-12 2018-12-18 Applied Materials, Inc. Semiconductor processing apparatus with protective coating including amorphous phase
US9017765B2 (en) * 2008-11-12 2015-04-28 Applied Materials, Inc. Protective coatings resistant to reactive plasma processing
US8858745B2 (en) 2008-11-12 2014-10-14 Applied Materials, Inc. Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US20110091700A1 (en) * 2009-10-20 2011-04-21 Saint-Gobain Ceramics & Plastics, Inc. Microelectronic processing component having a corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer
US9103358B2 (en) * 2010-03-16 2015-08-11 Eaton Corporation Corrosion-resistant position measurement system and method of forming same
US8865291B2 (en) * 2011-05-25 2014-10-21 Ngk Insulators, Ltd. Plasma-resistant member
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
TW201334035A (zh) * 2011-10-06 2013-08-16 Greene Tweed Of Delaware 抗電漿蝕刻膜,承載抗電漿蝕刻膜之物品及相關的方法
US9428825B1 (en) 2012-02-01 2016-08-30 U.S. Department Of Energy MCrAlY bond coat with enhanced yttrium
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) * 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9090046B2 (en) * 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US9394615B2 (en) * 2012-04-27 2016-07-19 Applied Materials, Inc. Plasma resistant ceramic coated conductive article
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
SG10201709699RA (en) * 2013-05-23 2017-12-28 Applied Materials Inc A coated liner assembly for a semiconductor processing chamber
US9708713B2 (en) 2013-05-24 2017-07-18 Applied Materials, Inc. Aerosol deposition coating for semiconductor chamber components
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US9711334B2 (en) 2013-07-19 2017-07-18 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US10468235B2 (en) * 2013-09-18 2019-11-05 Applied Materials, Inc. Plasma spray coating enhancement using plasma flame heat treatment
US20150126036A1 (en) 2013-11-05 2015-05-07 Tokyo Electron Limited Controlling etch rate drift and particles during plasma processing
US9440886B2 (en) 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
WO2015134135A1 (en) 2014-03-05 2015-09-11 Applied Materials, Inc. Critical chamber component surface improvement to reduce chamber particles
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US20150311043A1 (en) * 2014-04-25 2015-10-29 Applied Materials, Inc. Chamber component with fluorinated thin film coating
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
US9869013B2 (en) 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
CN104458370A (zh) * 2014-11-23 2015-03-25 昆明贵金属研究所 一种辉光放电质谱仪分析试样的制备方法
CN105986245A (zh) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
KR102674364B1 (ko) 2015-11-16 2024-06-13 쿠어스 테크, 인코포레이티드 내부식성 부품 및 제조 방법
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US9957192B2 (en) 2016-03-29 2018-05-01 Applied Materials, Inc. Low temperature fluoride glasses and glazes
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11572617B2 (en) 2016-05-03 2023-02-07 Applied Materials, Inc. Protective metal oxy-fluoride coatings
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
CN109963825B (zh) * 2016-11-16 2022-08-09 阔斯泰公司 耐腐蚀组件和制造方法
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10443125B2 (en) 2017-05-10 2019-10-15 Applied Materials, Inc. Flourination process to create sacrificial oxy-flouride layer
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US11401611B2 (en) * 2017-11-09 2022-08-02 Solution Spray Technologies, LLC Thermal barrier coatings with CMAS resistance
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
KR102633318B1 (ko) 2017-11-27 2024-02-05 에이에스엠 아이피 홀딩 비.브이. 청정 소형 구역을 포함한 장치
WO2019103613A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. A storage device for storing wafer cassettes for use with a batch furnace
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Asm 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
WO2019158960A1 (en) 2018-02-14 2019-08-22 Asm Ip Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
TWI709653B (zh) * 2018-02-15 2020-11-11 日商京瓷股份有限公司 電漿處理裝置用構件及具備其之電漿處理裝置
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11014853B2 (en) 2018-03-07 2021-05-25 Applied Materials, Inc. Y2O3—ZrO2 erosion resistant material for chamber components in plasma environments
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) * 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TWI704843B (zh) 2018-04-03 2020-09-11 日商京瓷股份有限公司 電漿處理裝置用構件及具備其之電漿處理裝置
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR20190128558A (ko) 2018-05-08 2019-11-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
TW202349473A (zh) 2018-05-11 2023-12-16 荷蘭商Asm Ip私人控股有限公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
TW202405221A (zh) 2018-06-27 2024-02-01 荷蘭商Asm Ip私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
TW202409324A (zh) 2018-06-27 2024-03-01 荷蘭商Asm Ip私人控股有限公司 用於形成含金屬材料之循環沉積製程
TWI751420B (zh) 2018-06-29 2022-01-01 荷蘭商Asm知識產權私人控股有限公司 薄膜沉積方法
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的***及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Asm 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
JP7509548B2 (ja) 2019-02-20 2024-07-02 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための周期的堆積方法および装置
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
JP2020133004A (ja) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材を処理するための基材処理装置および方法
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー.ブイ. ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー.ブイ. ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Asm Ip私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
TW202113936A (zh) 2019-07-29 2021-04-01 荷蘭商Asm Ip私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
KR102435986B1 (ko) * 2019-08-08 2022-08-26 세메스 주식회사 코팅 장치 및 코팅 방법
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー.ブイ. 成膜原料混合ガス生成装置及び成膜装置
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
CN112635282A (zh) 2019-10-08 2021-04-09 Asm Ip私人控股有限公司 具有连接板的基板处理装置、基板处理方法
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Asm Ip私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー.ブイ. 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210078405A (ko) 2019-12-17 2021-06-28 에이에스엠 아이피 홀딩 비.브이. 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Asm Ip私人控股有限公司 氣體供應總成以及閥板總成
KR20210089079A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Asm Ip私人控股有限公司 形成包括釩或銦層的結構之方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Asm Ip控股公司 專用於零件清潔的系統
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Asm Ip控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Asm Ip私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
CN113539771B (zh) * 2020-04-16 2024-04-12 中微半导体设备(上海)股份有限公司 零部件、其表面形成涂层的方法和等离子体反应装置
KR20210132605A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
CN113555279A (zh) 2020-04-24 2021-10-26 Asm Ip私人控股有限公司 形成含氮化钒的层的方法及包含其的结构
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR20210145080A (ko) 2020-05-22 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Asm Ip私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Asm Ip私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Asm Ip私人控股有限公司 基板處理方法
TW202202649A (zh) 2020-07-08 2022-01-16 荷蘭商Asm Ip私人控股有限公司 基板處理方法
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Asm Ip私人控股有限公司 用於沉積鉬層之方法及系統
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Asm Ip私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Asm Ip私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Asm Ip私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
CN114639631A (zh) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 跳动和摆动测量固定装置
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Asm Ip私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5251776A (en) * 1975-10-22 1977-04-25 Hitachi Ltd Metal vapor discharge lamp
JPH0234737A (ja) * 1988-07-22 1990-02-05 Masumoto Takeshi 耐食、耐熱性アルミニウム基合金薄膜とその製造法
JPH05238855A (ja) 1992-02-28 1993-09-17 Tokyo Electric Power Co Inc:The セラミックコーティング部材の製造方法
JPH06256926A (ja) 1993-03-08 1994-09-13 Mitsubishi Heavy Ind Ltd 遮熱コーティング膜
JPH07207459A (ja) * 1994-01-24 1995-08-08 Kobe Steel Ltd 多層皮膜被覆金属材料
JP3456545B2 (ja) * 1994-01-26 2003-10-14 日本電信電話株式会社 光導波路
US5798016A (en) 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
JP3507179B2 (ja) * 1995-01-13 2004-03-15 日本碍子株式会社 高圧放電灯
KR200162209Y1 (ko) 1995-12-28 1999-12-01 정몽규 상용차용 스페어타이어의 보관구조
US6071627A (en) * 1996-03-29 2000-06-06 Kabushiki Kaisha Toshiba Heat-resistant member and a method for evaluating quality of a heat-resistant member
JP3619330B2 (ja) 1996-07-31 2005-02-09 京セラ株式会社 プラズマプロセス装置用部材
US6447937B1 (en) * 1997-02-26 2002-09-10 Kyocera Corporation Ceramic materials resistant to halogen plasma and components using the same
JP3362113B2 (ja) * 1997-07-15 2003-01-07 日本碍子株式会社 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法
US6379575B1 (en) 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
JP3550306B2 (ja) 1998-11-27 2004-08-04 京セラ株式会社 耐プラズマ性部材及びその製造方法
US6383964B1 (en) * 1998-11-27 2002-05-07 Kyocera Corporation Ceramic member resistant to halogen-plasma corrosion
JP3046288B1 (ja) 1998-12-28 2000-05-29 京セラ株式会社 半導体・液晶製造装置用部材
JP3706488B2 (ja) 1998-11-27 2005-10-12 京セラ株式会社 耐食性セラミック部材
JP3456915B2 (ja) 1999-02-23 2003-10-14 太平洋セメント株式会社 半導体製造装置用部材
JP2000313656A (ja) * 1999-04-28 2000-11-14 Taiheiyo Cement Corp 耐蝕性セラミックス材料および耐蝕性部材
US6444083B1 (en) 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US6294260B1 (en) * 1999-09-10 2001-09-25 Siemens Westinghouse Power Corporation In-situ formation of multiphase air plasma sprayed barrier coatings for turbine components
TW514996B (en) 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
JP3510993B2 (ja) 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法

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KR20010098643A (ko) 2001-11-08
US6783875B2 (en) 2004-08-31
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