DE60134143D1 - Photodetektor mit grossem Dynamikbereich und erhöhtem Arbeitstemperaturbereich - Google Patents

Photodetektor mit grossem Dynamikbereich und erhöhtem Arbeitstemperaturbereich

Info

Publication number
DE60134143D1
DE60134143D1 DE60134143T DE60134143T DE60134143D1 DE 60134143 D1 DE60134143 D1 DE 60134143D1 DE 60134143 T DE60134143 T DE 60134143T DE 60134143 T DE60134143 T DE 60134143T DE 60134143 D1 DE60134143 D1 DE 60134143D1
Authority
DE
Germany
Prior art keywords
range
photodiode
photodetector
control voltage
working temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60134143T
Other languages
English (en)
Inventor
Peter Seitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre Suisse dElectronique et Microtechnique SA CSEM
Original Assignee
Centre Suisse dElectronique et Microtechnique SA CSEM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Suisse dElectronique et Microtechnique SA CSEM filed Critical Centre Suisse dElectronique et Microtechnique SA CSEM
Application granted granted Critical
Publication of DE60134143D1 publication Critical patent/DE60134143D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
DE60134143T 2001-10-16 2001-10-16 Photodetektor mit grossem Dynamikbereich und erhöhtem Arbeitstemperaturbereich Expired - Lifetime DE60134143D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01811011A EP1302986B1 (de) 2001-10-16 2001-10-16 Photodetektor mit grossem Dynamikbereich und erhöhtem Arbeitstemperaturbereich

Publications (1)

Publication Number Publication Date
DE60134143D1 true DE60134143D1 (de) 2008-07-03

Family

ID=8184192

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60134143T Expired - Lifetime DE60134143D1 (de) 2001-10-16 2001-10-16 Photodetektor mit grossem Dynamikbereich und erhöhtem Arbeitstemperaturbereich

Country Status (5)

Country Link
US (1) US6921891B2 (de)
EP (1) EP1302986B1 (de)
JP (1) JP2003202264A (de)
AT (1) ATE396499T1 (de)
DE (1) DE60134143D1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6974973B2 (en) * 2002-11-08 2005-12-13 Micron Technology, Inc. Apparatus for determining temperature of an active pixel imager and correcting temperature induced variations in an imager
US7115855B2 (en) * 2003-09-05 2006-10-03 Micron Technology, Inc. Image sensor having pinned floating diffusion diode
WO2005074250A1 (fr) * 2004-02-01 2005-08-11 Susanna Pita Capteur optoelectronique a haute dynamique avec faible bruit d’offset
KR20060023890A (ko) * 2004-09-11 2006-03-15 학교법인연세대학교 광응답특성을 제어할 수 있는 광대역 ｃｍｏｓ 이미지센서및 광응답특성 제어방법
JP4807014B2 (ja) * 2005-09-02 2011-11-02 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
EP1763220A1 (de) 2005-09-07 2007-03-14 CSEM Centre Suisse d'Electronique et de Microtechnique SA Festkörperbildsensor mit hoher Empfindlichkeit und erweitertem Dynamikbereich
EP1863091A3 (de) * 2006-05-30 2012-11-21 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement und elektronische Vorrichtung damit
JP4353224B2 (ja) 2006-09-25 2009-10-28 エプソンイメージングデバイス株式会社 光検出装置、電気光学装置、および電子機器
US20100044676A1 (en) 2008-04-18 2010-02-25 Invisage Technologies, Inc. Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals
US8525287B2 (en) 2007-04-18 2013-09-03 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
CN102017147B (zh) 2007-04-18 2014-01-29 因维萨热技术公司 用于光电装置的材料、***和方法
KR100958028B1 (ko) * 2008-02-13 2010-05-17 삼성모바일디스플레이주식회사 광센서 및 그를 이용한 평판표시장치
US8203195B2 (en) * 2008-04-18 2012-06-19 Invisage Technologies, Inc. Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
US8138567B2 (en) * 2008-04-18 2012-03-20 Invisage Technologies, Inc. Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
KR101015884B1 (ko) * 2008-07-16 2011-02-23 삼성모바일디스플레이주식회사 손가락 열에 의한 전류를 제거하는 터치 패널 구동회로 및 이를 포함하는 터치 패널
JP5491131B2 (ja) * 2008-11-12 2014-05-14 株式会社半導体エネルギー研究所 光電変換装置
IT1392502B1 (it) * 2008-12-31 2012-03-09 St Microelectronics Srl Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione
TWI400944B (zh) 2009-07-16 2013-07-01 Au Optronics Corp 影像感測器
WO2011156507A1 (en) 2010-06-08 2011-12-15 Edward Hartley Sargent Stable, sensitive photodetectors and image sensors including circuits, processes, and materials for enhanced imaging performance
JP5986551B2 (ja) * 2013-10-03 2016-09-06 旭化成エレクトロニクス株式会社 センサ処理回路及びそのオフセット検出方法
US9863808B2 (en) 2014-01-08 2018-01-09 Asahi Kasei Microdevices Corporation Output-current detection chip for diode sensors, and diode sensor device
FR3053503B1 (fr) * 2016-06-30 2019-03-29 Stmicroelectronics (Rousset) Sas Procede de protection d'un circuit integre, et circuit integre correspondant
JP6696695B2 (ja) * 2017-03-16 2020-05-20 株式会社東芝 光検出装置およびこれを用いた被写体検知システム
CN107014489B (zh) * 2017-04-27 2018-05-08 浙江工业大学 一种光多参量传感cmos单片集成电路
US10340852B2 (en) * 2017-10-13 2019-07-02 Northrop Grumman Systems Corporation Bias boosting circuit for amplifier
CN112362159B (zh) * 2017-12-05 2024-01-19 上海耕岩智能科技有限公司 光侦测像素结构、光侦测器件、光侦测装置
JP7150504B2 (ja) * 2018-07-18 2022-10-11 キヤノン株式会社 固体撮像装置及びその駆動方法
US11587962B2 (en) 2020-07-15 2023-02-21 Raytheon Company Imaging system including analog compression for simultaneous pulse detection and imaging
CN114245047B (zh) * 2021-12-21 2024-03-05 上海集成电路装备材料产业创新中心有限公司 像素单元及图像传感器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61187267A (ja) * 1985-02-14 1986-08-20 Matsushita Electric Ind Co Ltd 固体撮像装置
FR2638286B1 (fr) * 1988-10-25 1990-12-07 Thomson Csf Dispositif photosensible du type a amplification du signal au niveau des points photosensibles
US5376782A (en) * 1992-03-04 1994-12-27 Fuji Xerox Co., Ltd. Image pickup device providing decreased image lag
GB9505305D0 (en) * 1995-03-16 1995-05-03 Philips Electronics Uk Ltd Electronic devices comprising an array
US5721425A (en) * 1996-03-01 1998-02-24 National Semiconductor Corporation Active pixel sensor cell that reduces the effect of 1/f noise, increases the voltage range of the cell, and reduces the size of the cell
DE69833998T2 (de) 1998-11-18 2007-04-05 C.S.E.M. Centre Suisse D'electronique Et De Microtechnique S.A. Bilderzeugungsverfahren und -vorrichtung
US6498331B1 (en) * 1999-12-21 2002-12-24 Pictos Technologies, Inc. Method and apparatus for achieving uniform low dark current with CMOS photodiodes

Also Published As

Publication number Publication date
JP2003202264A (ja) 2003-07-18
US20030071196A1 (en) 2003-04-17
US6921891B2 (en) 2005-07-26
EP1302986B1 (de) 2008-05-21
ATE396499T1 (de) 2008-06-15
EP1302986A1 (de) 2003-04-16

Similar Documents

Publication Publication Date Title
DE60134143D1 (de) Photodetektor mit grossem Dynamikbereich und erhöhtem Arbeitstemperaturbereich
CA2073430A1 (en) Laser control circuit
KR101203249B1 (ko) 레이저 다이오드 광원의 스펙트럼 콘텐츠 유지 장치
WO1999040559A3 (en) Organic electroluminescent device
US6331062B1 (en) LED flashlight
EP0936454A3 (de) Hochempfindlicher Temperatursensor von Diodentyp, mit einstellbare Stromquelle
ATE144343T1 (de) Anzeigevorrichtung
TWI243487B (en) Brightness sensor
FI913219A0 (fi) Kopplingsanordning och foerfarande foer approximering av en olineaer oeverfoeringsfunktin.
KR20050032369A (ko) 이득 스위칭 회로를 채용한 ｐｄｉｃ용 전류 전압 변환 회로
JPS55132078A (en) Temperature compensating circuit for light detection circuit by semiconductor
RU2193761C1 (ru) Фотоприемное устройство
JPS5734572A (en) Exposure stabilization device
CN101900603B (zh) 光传感器电路
JPS5490982A (en) Light output stabilizing circuit of semiconductor laser
JP2688745B2 (ja) 半導体受光素子の電圧出力回路
RU2248670C2 (ru) Устройство включения лавинного фотодиода в приемнике оптического излучения
JPS61198934A (ja) 光送信器
JPH038384A (ja) 半導体レーザ装置
KIMINOBU Semiconductor laser driving circuit
SU1509617A1 (ru) Источник света
YOSHIHIRO Light oscillator
SU1751731A1 (ru) Фотоавтомат дл осветительной установки
YASUHIRO Automatic control circuit for optical output
KR970014478A (ko) 주위 조도에 따라 불밝기 조절을 하는 인버터스탠드

Legal Events

Date Code Title Description
8364 No opposition during term of opposition