DE60121685D1 - Herstellungsverfahren für integrierten Schaltkreis - Google Patents

Herstellungsverfahren für integrierten Schaltkreis

Info

Publication number
DE60121685D1
DE60121685D1 DE60121685T DE60121685T DE60121685D1 DE 60121685 D1 DE60121685 D1 DE 60121685D1 DE 60121685 T DE60121685 T DE 60121685T DE 60121685 T DE60121685 T DE 60121685T DE 60121685 D1 DE60121685 D1 DE 60121685D1
Authority
DE
Germany
Prior art keywords
integrated circuit
manufacturing process
manufacturing
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60121685T
Other languages
English (en)
Other versions
DE60121685T2 (de
Inventor
Thomas J Krutsick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Guardian Corp filed Critical Agere Systems Guardian Corp
Application granted granted Critical
Publication of DE60121685D1 publication Critical patent/DE60121685D1/de
Publication of DE60121685T2 publication Critical patent/DE60121685T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66166—Resistors with PN junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE60121685T 2000-08-30 2001-08-17 Herstellungsverfahren für integrierten Schaltkreis Expired - Lifetime DE60121685T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US650606 2000-08-30
US09/650,606 US6458669B1 (en) 2000-08-30 2000-08-30 Method of manufacturing an integrated circuit

Publications (2)

Publication Number Publication Date
DE60121685D1 true DE60121685D1 (de) 2006-09-07
DE60121685T2 DE60121685T2 (de) 2007-08-02

Family

ID=24609571

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60121685T Expired - Lifetime DE60121685T2 (de) 2000-08-30 2001-08-17 Herstellungsverfahren für integrierten Schaltkreis

Country Status (6)

Country Link
US (1) US6458669B1 (de)
EP (1) EP1184909B1 (de)
JP (1) JP4058710B2 (de)
KR (1) KR100847233B1 (de)
DE (1) DE60121685T2 (de)
TW (1) TW525299B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7439146B1 (en) * 2000-08-30 2008-10-21 Agere Systems Inc. Field plated resistor with enhanced routing area thereover
US20070096260A1 (en) * 2005-10-28 2007-05-03 International Business Machines Corporation Reduced parasitic and high value resistor and method of manufacture

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140817A (en) 1977-11-04 1979-02-20 Bell Telephone Laboratories, Incorporated Thick film resistor circuits
SE7900379L (sv) * 1978-01-25 1979-07-26 Western Electric Co Halvledare-integrerad-krets
JPS5621359A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Semiconductor device
JPS56167360A (en) * 1980-05-26 1981-12-23 Mitsubishi Electric Corp Diffused resistance element in semiconductor device
JPS5799764A (en) * 1980-12-12 1982-06-21 Toshiba Corp Semiconductor device
JPS60231352A (ja) * 1984-04-28 1985-11-16 Fujitsu Ltd 半導体装置
US4786612A (en) * 1986-02-03 1988-11-22 Intel Corporation Plasma enhanced chemical vapor deposited vertical silicon nitride resistor
US5326726A (en) * 1990-08-17 1994-07-05 Analog Devices, Inc. Method for fabricating monolithic chip containing integrated circuitry and suspended microstructure
US5521576A (en) 1993-10-06 1996-05-28 Collins; Franklyn M. Fine-line thick film resistors and resistor networks and method of making same
JP2932940B2 (ja) 1994-06-08 1999-08-09 株式会社デンソー 薄膜抵抗体を有する半導体装置の製造方法
US5683928A (en) 1994-12-05 1997-11-04 General Electric Company Method for fabricating a thin film resistor
US5567644A (en) 1995-09-14 1996-10-22 Micron Technology, Inc. Method of making a resistor
US5976392A (en) 1997-03-07 1999-11-02 Yageo Corporation Method for fabrication of thin film resistor
US6069398A (en) 1997-08-01 2000-05-30 Advanced Micro Devices, Inc. Thin film resistor and fabrication method thereof

Also Published As

Publication number Publication date
KR20020018164A (ko) 2002-03-07
JP2002134625A (ja) 2002-05-10
EP1184909B1 (de) 2006-07-26
TW525299B (en) 2003-03-21
US6458669B1 (en) 2002-10-01
DE60121685T2 (de) 2007-08-02
JP4058710B2 (ja) 2008-03-12
EP1184909A2 (de) 2002-03-06
KR100847233B1 (ko) 2008-07-18
EP1184909A3 (de) 2004-10-13

Similar Documents

Publication Publication Date Title
DE60227481D1 (de) Herstellungsverfahren für komplementäre Transistoren
DE60141055D1 (de) Push-Planung für Halbleiterfertigung
DE60134954D1 (de) Produktionanordnung für Halbleiter
DE69912328D1 (de) Fassung für integrierte Schaltkreise
DE60218932D1 (de) Integrierte Schaltkreisstruktur
DE60030743D1 (de) Herstellungsmethode für eine leiterplatte
DE60106107D1 (de) Verbinder für eine flache Schaltungseinheit
DE60336429D1 (de) HERSTELLUNGSVERFAHREN FÜR Ta-SPUTTERTARGET
DE69807718D1 (de) Herstellungsverfahren für integrierte schaltkreise mit reduzierter dimension
DE60230568D1 (de) Integrierte Radiofrequenz-Schaltkreise
DE60237866D1 (de) Hydraulikkreislauf für baumaschinen
DE60034345D1 (de) Abschaltprotokoll für integrierte Schaltungen
DE60216002D1 (de) Automatische Schaltung für Fahrrad
DE60135728D1 (de) Integrierte Halbleiterschaltung
DE60216133D1 (de) Reifenherstellungsverfahren
DE60229821D1 (de) Gehäuse für integrierte Schaltung
DE69839906D1 (de) Herstellungsverfahren für eine integrierte Schaltung
DE60222529D1 (de) Herstellungsverfahren für kombinationsimpfstoffe
DE60126385D1 (de) Steckvervindung für integrierte Schaltung
DE60236944D1 (de) Herstellungsverfahren für einen anneal-wafer
DE60115364D1 (de) Herstellungsverfahren für stranggussknüppel
DE60115762D1 (de) Verbindungsstruktur für eine flache Schaltungseinheit
DE60037599D1 (de) Herstellungsverfahren für halbleiteranordnung mit reduzierter signalwegverzögerungszeit
DE50011761D1 (de) Fuse für halbleiteranordnung
FI20012508A (fi) Parannettu kartonginvalmistusmenetelmä

Legal Events

Date Code Title Description
8364 No opposition during term of opposition