DE60035736D1 - EEPROM mit Redundanz - Google Patents

EEPROM mit Redundanz

Info

Publication number
DE60035736D1
DE60035736D1 DE60035736T DE60035736T DE60035736D1 DE 60035736 D1 DE60035736 D1 DE 60035736D1 DE 60035736 T DE60035736 T DE 60035736T DE 60035736 T DE60035736 T DE 60035736T DE 60035736 D1 DE60035736 D1 DE 60035736D1
Authority
DE
Germany
Prior art keywords
redundancy
eeprom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60035736T
Other languages
English (en)
Other versions
DE60035736T2 (de
Inventor
Hidetoshi Saito
Masao Kuriyama
Yasuhiko Honda
Hideo Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE60035736D1 publication Critical patent/DE60035736D1/de
Application granted granted Critical
Publication of DE60035736T2 publication Critical patent/DE60035736T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE60035736T 1999-06-03 2000-06-05 EEPROM mit Redundanz Expired - Lifetime DE60035736T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP15625599 1999-06-03
JP15625599 1999-06-03
JP2000065398A JP2001052495A (ja) 1999-06-03 2000-03-09 半導体メモリ
JP2000065398 2000-03-09

Publications (2)

Publication Number Publication Date
DE60035736D1 true DE60035736D1 (de) 2007-09-13
DE60035736T2 DE60035736T2 (de) 2008-04-30

Family

ID=26484060

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60035736T Expired - Lifetime DE60035736T2 (de) 1999-06-03 2000-06-05 EEPROM mit Redundanz

Country Status (5)

Country Link
US (2) US6320800B1 (de)
EP (1) EP1058192B1 (de)
JP (1) JP2001052495A (de)
KR (1) KR100351596B1 (de)
DE (1) DE60035736T2 (de)

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KR100555574B1 (ko) * 2004-09-20 2006-03-03 삼성전자주식회사 결함 어드레스 프로그래밍 회로 및 이를 구비하는 반도체메모리 장치.
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Also Published As

Publication number Publication date
US20020012282A1 (en) 2002-01-31
EP1058192A3 (de) 2001-01-10
US6532181B2 (en) 2003-03-11
US6320800B1 (en) 2001-11-20
EP1058192A2 (de) 2000-12-06
KR20010069203A (ko) 2001-07-23
KR100351596B1 (ko) 2002-09-11
JP2001052495A (ja) 2001-02-23
EP1058192B1 (de) 2007-08-01
DE60035736T2 (de) 2008-04-30

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