DE60027680D1 - Hochstromdetektor mit einer Hall-Effektanordnung - Google Patents
Hochstromdetektor mit einer Hall-EffektanordnungInfo
- Publication number
- DE60027680D1 DE60027680D1 DE60027680T DE60027680T DE60027680D1 DE 60027680 D1 DE60027680 D1 DE 60027680D1 DE 60027680 T DE60027680 T DE 60027680T DE 60027680 T DE60027680 T DE 60027680T DE 60027680 D1 DE60027680 D1 DE 60027680D1
- Authority
- DE
- Germany
- Prior art keywords
- high current
- hall effect
- current detector
- effect arrangement
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05569—Disposition the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP36117899 | 1999-12-20 | ||
JP36117899A JP4164615B2 (ja) | 1999-12-20 | 1999-12-20 | ホ−ル素子を備えた電流検出装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60027680D1 true DE60027680D1 (de) | 2006-06-08 |
DE60027680T2 DE60027680T2 (de) | 2007-04-26 |
Family
ID=18472517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60027680T Expired - Fee Related DE60027680T2 (de) | 1999-12-20 | 2000-11-29 | Hochstromdetektor mit einer Hall-Effektanordnung |
Country Status (4)
Country | Link |
---|---|
US (2) | US6683448B1 (de) |
EP (1) | EP1111693B1 (de) |
JP (1) | JP4164615B2 (de) |
DE (1) | DE60027680T2 (de) |
Families Citing this family (78)
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TWI273266B (en) * | 2001-11-01 | 2007-02-11 | Asahi Kasei Emd Corp | Current sensor and current sensor manufacturing method |
DE10392295T5 (de) * | 2002-04-04 | 2005-05-19 | Hitachi, Ltd. | Stromrichter und damit ausgestatteter Elektroantrieb und damit ausgestattete mobile Vorrichtung |
US6781359B2 (en) | 2002-09-20 | 2004-08-24 | Allegro Microsystems, Inc. | Integrated current sensor |
US7259545B2 (en) * | 2003-02-11 | 2007-08-21 | Allegro Microsystems, Inc. | Integrated sensor |
US20060219436A1 (en) * | 2003-08-26 | 2006-10-05 | Taylor William P | Current sensor |
US7709754B2 (en) * | 2003-08-26 | 2010-05-04 | Allegro Microsystems, Inc. | Current sensor |
US7476816B2 (en) | 2003-08-26 | 2009-01-13 | Allegro Microsystems, Inc. | Current sensor |
US6995315B2 (en) * | 2003-08-26 | 2006-02-07 | Allegro Microsystems, Inc. | Current sensor |
US7166807B2 (en) | 2003-08-26 | 2007-01-23 | Allegro Microsystems, Inc. | Current sensor |
US7075287B1 (en) | 2003-08-26 | 2006-07-11 | Allegro Microsystems, Inc. | Current sensor |
FR2877436B1 (fr) * | 2004-11-03 | 2007-01-26 | Mitsubishi Electric Corp | Dispositif de detection de courant |
DE102004054317B4 (de) * | 2004-11-10 | 2014-05-15 | Mitsubishi Denki K.K. | Strommessvorrichtung |
ATE381024T1 (de) * | 2005-02-15 | 2007-12-15 | Fiat Ricerche | Oberflächenmontierter integrierter stromsensor |
EP1772737A3 (de) | 2005-10-08 | 2008-02-20 | Melexis Technologies SA | Baugruppe zur Strommessung |
JP4224483B2 (ja) * | 2005-10-14 | 2009-02-12 | Tdk株式会社 | 電流センサ |
JP2007121239A (ja) * | 2005-10-31 | 2007-05-17 | Denso Corp | 電流センサ及びその製造方法 |
US7768083B2 (en) | 2006-01-20 | 2010-08-03 | Allegro Microsystems, Inc. | Arrangements for an integrated sensor |
US20070279053A1 (en) | 2006-05-12 | 2007-12-06 | Taylor William P | Integrated current sensor |
EP1882953A1 (de) * | 2006-07-26 | 2008-01-30 | Siemens Aktiengesellschaft | Stromerfassungsvorrichtung |
DE202006013311U1 (de) * | 2006-08-30 | 2008-01-03 | Merten Gmbh & Co. Kg | Anschlusseinheit eines Bussystems |
JP2008151530A (ja) * | 2006-12-14 | 2008-07-03 | Denso Corp | 磁界検出用半導体集積回路 |
JP2009042003A (ja) * | 2007-08-07 | 2009-02-26 | Denso Corp | 電流センサ |
US7768254B1 (en) * | 2007-10-23 | 2010-08-03 | Exaflop Llc | Server power measurement |
DE102007062633B4 (de) * | 2007-12-22 | 2010-04-15 | Sensitec Gmbh | Anordnung zum potentialfreien Messen von Strömen |
JP5095460B2 (ja) * | 2008-01-17 | 2012-12-12 | シャープ株式会社 | 半導体装置および表示装置 |
US7816905B2 (en) * | 2008-06-02 | 2010-10-19 | Allegro Microsystems, Inc. | Arrangements for a current sensing circuit and integrated current sensor |
US8093670B2 (en) | 2008-07-24 | 2012-01-10 | Allegro Microsystems, Inc. | Methods and apparatus for integrated circuit having on chip capacitor with eddy current reductions |
US8063634B2 (en) * | 2008-07-31 | 2011-11-22 | Allegro Microsystems, Inc. | Electronic circuit and method for resetting a magnetoresistance element |
US7973527B2 (en) | 2008-07-31 | 2011-07-05 | Allegro Microsystems, Inc. | Electronic circuit configured to reset a magnetoresistance element |
JP5058925B2 (ja) * | 2008-09-18 | 2012-10-24 | 矢崎総業株式会社 | 電流センサ |
US9222992B2 (en) | 2008-12-18 | 2015-12-29 | Infineon Technologies Ag | Magnetic field current sensors |
US20110006763A1 (en) * | 2009-07-07 | 2011-01-13 | Anthonius Bakker | Hall effect current sensor system and associated flip-chip packaging |
US8493053B2 (en) * | 2009-12-18 | 2013-07-23 | GRID20/20, Inc. | System and device for measuring voltage in a conductor |
US8717016B2 (en) * | 2010-02-24 | 2014-05-06 | Infineon Technologies Ag | Current sensors and methods |
US8760149B2 (en) | 2010-04-08 | 2014-06-24 | Infineon Technologies Ag | Magnetic field current sensors |
US8680843B2 (en) | 2010-06-10 | 2014-03-25 | Infineon Technologies Ag | Magnetic field current sensors |
US9121885B2 (en) * | 2010-08-16 | 2015-09-01 | Infineon Technologies Ag | Sensor package and method of manufacturing thereof |
US8283742B2 (en) | 2010-08-31 | 2012-10-09 | Infineon Technologies, A.G. | Thin-wafer current sensors |
US9476915B2 (en) | 2010-12-09 | 2016-10-25 | Infineon Technologies Ag | Magnetic field current sensors |
US8975889B2 (en) | 2011-01-24 | 2015-03-10 | Infineon Technologies Ag | Current difference sensors, systems and methods |
US8963536B2 (en) | 2011-04-14 | 2015-02-24 | Infineon Technologies Ag | Current sensors, systems and methods for sensing current in a conductor |
JP5632078B2 (ja) * | 2011-05-20 | 2014-11-26 | 本田技研工業株式会社 | コアレス電流センサ構造体、コアレス電流センサ及び電流検知方法 |
JP5695196B2 (ja) * | 2011-07-13 | 2015-04-01 | 旭化成エレクトロニクス株式会社 | 電流センサ用基板及び電流センサ |
EP2733496B1 (de) * | 2011-07-13 | 2016-09-07 | Asahi Kasei Microdevices Corporation | Stromsensorträger und stromsensor |
US8907437B2 (en) | 2011-07-22 | 2014-12-09 | Allegro Microsystems, Llc | Reinforced isolation for current sensor with magnetic field transducer |
US8629539B2 (en) | 2012-01-16 | 2014-01-14 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
US9812588B2 (en) | 2012-03-20 | 2017-11-07 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US9494660B2 (en) | 2012-03-20 | 2016-11-15 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US9666788B2 (en) | 2012-03-20 | 2017-05-30 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US10234513B2 (en) | 2012-03-20 | 2019-03-19 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US10345343B2 (en) | 2013-03-15 | 2019-07-09 | Allegro Microsystems, Llc | Current sensor isolation |
US9190606B2 (en) | 2013-03-15 | 2015-11-17 | Allegro Micosystems, LLC | Packaging for an electronic device |
US9411025B2 (en) | 2013-04-26 | 2016-08-09 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame and a magnet |
TWI504904B (zh) | 2013-07-30 | 2015-10-21 | Asahi Kasei Microdevices Corp | Current sensor |
EP2884289A1 (de) | 2013-12-10 | 2015-06-17 | ams AG | Chip-Stromsensorpaket und Herstellungsverfahren eines Stromsensorpakets |
JP6314010B2 (ja) * | 2014-03-28 | 2018-04-18 | 旭化成エレクトロニクス株式会社 | 電流センサ |
US9354284B2 (en) | 2014-05-07 | 2016-05-31 | Allegro Microsystems, Llc | Magnetic field sensor configured to measure a magnetic field in a closed loop manner |
JP6321800B2 (ja) * | 2014-06-27 | 2018-05-09 | 旭化成エレクトロニクス株式会社 | 電流センサ |
GB2531536A (en) * | 2014-10-21 | 2016-04-27 | Melexis Technologies Nv | Vertical hall sensors with reduced offset error |
US9322887B1 (en) | 2014-12-01 | 2016-04-26 | Allegro Microsystems, Llc | Magnetic field sensor with magnetoresistance elements and conductive-trace magnetic source |
JP6341427B2 (ja) * | 2015-01-21 | 2018-06-13 | 株式会社オートネットワーク技術研究所 | 回路構成体及び電気接続箱 |
US10041811B2 (en) * | 2016-06-17 | 2018-08-07 | Texas Instruments Incorporated | Transimpedance amplifier-based reduction of hall sensor parasitic impedance |
JP6767212B2 (ja) * | 2016-09-02 | 2020-10-14 | 旭化成エレクトロニクス株式会社 | 電流センサ |
KR102445270B1 (ko) * | 2016-12-20 | 2022-09-20 | 한국전자기술연구원 | 전류센서 및 그의 제조방법 |
KR102165935B1 (ko) * | 2016-12-20 | 2020-10-14 | 한국전자기술연구원 | 전류센서 및 그의 제조방법 |
US10935612B2 (en) | 2018-08-20 | 2021-03-02 | Allegro Microsystems, Llc | Current sensor having multiple sensitivity ranges |
JP7258526B2 (ja) * | 2018-11-30 | 2023-04-17 | 株式会社東芝 | 電流検出装置 |
US10991644B2 (en) | 2019-08-22 | 2021-04-27 | Allegro Microsystems, Llc | Integrated circuit package having a low profile |
JP7289782B2 (ja) | 2019-12-19 | 2023-06-12 | 株式会社東芝 | 電流検出装置 |
US11800813B2 (en) | 2020-05-29 | 2023-10-24 | Allegro Microsystems, Llc | High isolation current sensor |
US11320466B1 (en) | 2020-10-29 | 2022-05-03 | Allegro Microsystems, Llc | Differential current sensor |
US11935844B2 (en) * | 2020-12-31 | 2024-03-19 | Texas Instruments Incorporated | Semiconductor device and method of the same |
US11402409B1 (en) | 2021-03-22 | 2022-08-02 | Allegro Microsystems, Llc | Differential current sensor package |
US11567108B2 (en) | 2021-03-31 | 2023-01-31 | Allegro Microsystems, Llc | Multi-gain channels for multi-range sensor |
DE102021114943A1 (de) | 2021-06-10 | 2022-12-15 | Infineon Technologies Ag | Sensorvorrichtungen mit Weichmagneten und zugehörige Herstellungsverfahren |
US11644485B2 (en) | 2021-10-07 | 2023-05-09 | Allegro Microsystems, Llc | Current sensor integrated circuits |
US11768230B1 (en) | 2022-03-30 | 2023-09-26 | Allegro Microsystems, Llc | Current sensor integrated circuit with a dual gauge lead frame |
US11994541B2 (en) | 2022-04-15 | 2024-05-28 | Allegro Microsystems, Llc | Current sensor assemblies for low currents |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL170069C (nl) * | 1973-06-18 | 1982-09-16 | Philips Nv | Halfgeleiderinrichting met hall-element. |
JPS537183A (en) | 1976-07-09 | 1978-01-23 | Ichikoh Industries Ltd | Magneto electro transducer |
US5041780A (en) * | 1988-09-13 | 1991-08-20 | California Institute Of Technology | Integrable current sensors |
JPH0390872A (ja) * | 1989-09-01 | 1991-04-16 | Toshiba Corp | 半導体装置 |
JPH04364472A (ja) | 1991-06-12 | 1992-12-16 | Fuji Electric Co Ltd | 磁電変換装置 |
DE59109002D1 (de) * | 1991-07-31 | 1998-07-09 | Micronas Intermetall Gmbh | Hallsensor mit Selbstkompensation |
CN1032610C (zh) * | 1992-08-08 | 1996-08-21 | 易明镜 | 线性霍尔电路 |
DE4410180A1 (de) * | 1994-03-24 | 1995-09-28 | Bosch Gmbh Robert | Stromstärkemeßgerät |
US6232832B1 (en) * | 1994-07-19 | 2001-05-15 | Honeywell International Inc | Circuit for limiting an output voltage to a percent of a variable supply voltage |
DE4431703C2 (de) * | 1994-09-06 | 1997-01-30 | Itt Ind Gmbh Deutsche | Magnetfeldsensor mit Hallelement |
EP0727669B1 (de) * | 1995-02-17 | 2002-03-20 | Siemens Metering AG | Anordnung zur Temperaturkompensation |
US5841272A (en) * | 1995-12-20 | 1998-11-24 | Sundstrand Corporation | Frequency-insensitive current sensor |
JPH10282156A (ja) | 1997-04-09 | 1998-10-23 | Yasusuke Yamamoto | 電流センサー |
JPH10293141A (ja) | 1997-04-18 | 1998-11-04 | Yasusuke Yamamoto | 電流センサー |
EP0944839B1 (de) * | 1997-09-15 | 2006-03-29 | AMS International AG | Eine stromüberwachungseinrichtung und ein verfahren zu ihrer herstellung |
DE19821492A1 (de) * | 1998-05-14 | 1999-11-25 | Daimler Chrysler Ag | Verfahren zur berührungslosen Messung eines einen Leiter durchfließenden Stromes mittels eines Hallsensors sowie Hallsensoranordnung |
JP2001165963A (ja) * | 1999-12-09 | 2001-06-22 | Sanken Electric Co Ltd | ホール素子を備えた電流検出装置 |
-
1999
- 1999-12-20 JP JP36117899A patent/JP4164615B2/ja not_active Expired - Fee Related
-
2000
- 2000-11-28 US US09/723,440 patent/US6683448B1/en not_active Expired - Lifetime
- 2000-11-29 EP EP00126092A patent/EP1111693B1/de not_active Expired - Lifetime
- 2000-11-29 DE DE60027680T patent/DE60027680T2/de not_active Expired - Fee Related
-
2003
- 2003-10-20 US US10/689,017 patent/US6791313B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6791313B2 (en) | 2004-09-14 |
JP2001174486A (ja) | 2001-06-29 |
US6683448B1 (en) | 2004-01-27 |
EP1111693A2 (de) | 2001-06-27 |
US20040080307A1 (en) | 2004-04-29 |
DE60027680T2 (de) | 2007-04-26 |
JP4164615B2 (ja) | 2008-10-15 |
EP1111693A3 (de) | 2004-10-13 |
EP1111693B1 (de) | 2006-05-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |