DE60016245D1 - Halbleiterlaservorrichtung für elektro-optische verwendungen und herstellungsverfahren - Google Patents
Halbleiterlaservorrichtung für elektro-optische verwendungen und herstellungsverfahrenInfo
- Publication number
- DE60016245D1 DE60016245D1 DE60016245T DE60016245T DE60016245D1 DE 60016245 D1 DE60016245 D1 DE 60016245D1 DE 60016245 T DE60016245 T DE 60016245T DE 60016245 T DE60016245 T DE 60016245T DE 60016245 D1 DE60016245 D1 DE 60016245D1
- Authority
- DE
- Germany
- Prior art keywords
- electro
- semiconductor laser
- laser device
- production methods
- optical uses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0637—Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1628—Solid materials characterised by a semiconducting matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3004—Structure or shape of the active region; Materials used for the active region employing a field effect structure for inducing charge-carriers, e.g. FET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99830544A EP1081812A1 (de) | 1999-09-02 | 1999-09-02 | Halbleitervorrichtung für elektro-optische Verwendung, Herstellungsverfahren und Halbleiterlaservorrichtung |
PCT/EP2000/008555 WO2001017074A1 (en) | 1999-09-02 | 2000-09-01 | Semiconductor device for electro-optic applications, method for manufacturing said device and corresponding semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60016245D1 true DE60016245D1 (de) | 2004-12-30 |
Family
ID=8243562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60016245T Expired - Lifetime DE60016245D1 (de) | 1999-09-02 | 2000-09-01 | Halbleiterlaservorrichtung für elektro-optische verwendungen und herstellungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US6828598B1 (de) |
EP (2) | EP1081812A1 (de) |
AU (1) | AU1383501A (de) |
DE (1) | DE60016245D1 (de) |
WO (1) | WO2001017074A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1258927B1 (de) * | 2001-05-15 | 2005-08-17 | STMicroelectronics S.r.l. | Halbleiter-Photodetektor mit hoher Verstärkung und Herstellungsverfahren |
AUPR534201A0 (en) * | 2001-05-30 | 2001-06-21 | Unisearch Limited | High efficiency silicon light emitting device |
KR100450749B1 (ko) * | 2001-12-28 | 2004-10-01 | 한국전자통신연구원 | 어븀이 도핑된 실리콘 나노 점 어레이 제조 방법 및 이에이용되는 레이저 기화 증착 장비 |
US7242027B2 (en) | 2004-08-13 | 2007-07-10 | Paul Steven Schranz | Light emitting and image sensing device and apparatus |
JP2008526003A (ja) * | 2004-12-24 | 2008-07-17 | ピレリ・アンド・チ・ソチエタ・ペル・アツィオーニ | ゲルマニウムオンシリコンの光検出器 |
US7528403B1 (en) * | 2005-04-25 | 2009-05-05 | California Institute Of Technology | Hybrid silicon-on-insulator waveguide devices |
WO2007137157A2 (en) * | 2006-05-18 | 2007-11-29 | Massachusetts Institute Of Technology | Extrinsic gain laser and optical amplification device |
US20080002929A1 (en) | 2006-06-30 | 2008-01-03 | Bowers John E | Electrically pumped semiconductor evanescent laser |
US8111729B2 (en) * | 2008-03-25 | 2012-02-07 | Intel Corporation | Multi-wavelength hybrid silicon laser array |
DE102009003544B4 (de) * | 2009-02-26 | 2012-10-18 | Q-Cells Se | Verfahren zur Überprüfung von Solarzellenoberflächen |
CN102254818B (zh) * | 2010-05-19 | 2013-05-01 | 中国科学院微电子研究所 | 一种半导体结型二极管器件及其制造方法 |
US9450381B1 (en) | 2015-03-19 | 2016-09-20 | International Business Machines Corporation | Monolithic integrated photonics with lateral bipolar and BiCMOS |
US9372307B1 (en) | 2015-03-30 | 2016-06-21 | International Business Machines Corporation | Monolithically integrated III-V optoelectronics with SI CMOS |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6474783A (en) * | 1987-09-17 | 1989-03-20 | Fujitsu Ltd | Semiconductor light-emitting device |
US5045498A (en) * | 1990-08-10 | 1991-09-03 | Hewlett-Packard Company | Method of fabricating an atomic element doped semiconductor injection laser using ion implantation and epitaxial growth on the implanted surface |
US5107538A (en) * | 1991-06-06 | 1992-04-21 | At&T Bell Laboratories | Optical waveguide system comprising a rare-earth Si-based optical device |
-
1999
- 1999-09-02 EP EP99830544A patent/EP1081812A1/de not_active Withdrawn
-
2000
- 2000-09-01 US US09/653,390 patent/US6828598B1/en not_active Expired - Lifetime
- 2000-09-01 AU AU13835/01A patent/AU1383501A/en not_active Abandoned
- 2000-09-01 DE DE60016245T patent/DE60016245D1/de not_active Expired - Lifetime
- 2000-09-01 WO PCT/EP2000/008555 patent/WO2001017074A1/en active IP Right Grant
- 2000-09-01 EP EP00975849A patent/EP1210752B9/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AU1383501A (en) | 2001-03-26 |
EP1081812A1 (de) | 2001-03-07 |
EP1210752B9 (de) | 2005-08-31 |
US6828598B1 (en) | 2004-12-07 |
EP1210752A1 (de) | 2002-06-05 |
WO2001017074A1 (en) | 2001-03-08 |
EP1210752B1 (de) | 2004-11-24 |
WO2001017074A9 (en) | 2002-09-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |