DE60010837D1 - Optische Halbleitervorrichtung und zugehöriges Herstellungsverfahren - Google Patents
Optische Halbleitervorrichtung und zugehöriges HerstellungsverfahrenInfo
- Publication number
- DE60010837D1 DE60010837D1 DE60010837T DE60010837T DE60010837D1 DE 60010837 D1 DE60010837 D1 DE 60010837D1 DE 60010837 T DE60010837 T DE 60010837T DE 60010837 T DE60010837 T DE 60010837T DE 60010837 D1 DE60010837 D1 DE 60010837D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- optical semiconductor
- associated manufacturing
- manufacturing
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1215—Multiplicity of periods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33595199 | 1999-11-26 | ||
JP33595199A JP3847038B2 (ja) | 1999-11-26 | 1999-11-26 | 光半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60010837D1 true DE60010837D1 (de) | 2004-06-24 |
DE60010837T2 DE60010837T2 (de) | 2005-06-23 |
Family
ID=18294169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60010837T Expired - Fee Related DE60010837T2 (de) | 1999-11-26 | 2000-11-24 | Optische Halbleitervorrichtung und zugehöriges Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (2) | US6707839B1 (de) |
EP (1) | EP1104060B1 (de) |
JP (1) | JP3847038B2 (de) |
DE (1) | DE60010837T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003069145A (ja) * | 2001-06-14 | 2003-03-07 | Furukawa Electric Co Ltd:The | 分布帰還型半導体レーザ素子群の作製方法 |
CA2392662A1 (en) * | 2001-07-10 | 2003-01-10 | John Kenton White | All optical clock recovery |
JP2005166998A (ja) * | 2003-12-03 | 2005-06-23 | Mitsubishi Electric Corp | リッジ型分布帰還半導体レーザ |
US7440666B2 (en) * | 2004-02-25 | 2008-10-21 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Buried heterostucture device having integrated waveguide grating fabricated by single step MOCVD |
SE531353C2 (sv) * | 2005-08-17 | 2009-03-03 | Syntune Ab | Metod för att framställa ett modulerat gitter för ett optimalt reflektionsspektra |
JP4193866B2 (ja) * | 2006-04-27 | 2008-12-10 | 住友電気工業株式会社 | 半導体発光素子の製造方法 |
JP4552894B2 (ja) * | 2006-05-12 | 2010-09-29 | 住友電気工業株式会社 | 分布帰還型半導体レーザを作製する方法 |
CN100468090C (zh) * | 2006-07-05 | 2009-03-11 | 中国科学院半导体研究所 | 吸收型增益耦合分布反馈激光器的制作方法 |
KR100875929B1 (ko) * | 2006-12-05 | 2008-12-26 | 한국전자통신연구원 | 반도체막의 선택적 영역 성장용 마스크 패턴 및 그를이용한 반도체막의 선택적 영역 성장 방법 |
JP2008294124A (ja) * | 2007-05-23 | 2008-12-04 | Fujitsu Ltd | 光半導体素子 |
US8216866B2 (en) * | 2010-10-13 | 2012-07-10 | Sumitomo Electric Industries, Ltd. | Method to manufacture semiconductor device with optical grating |
KR102475891B1 (ko) * | 2015-10-08 | 2022-12-12 | 삼성전자주식회사 | 측면 발광 레이저 광원, 및 이를 포함한 3차원 영상 획득 장치 |
CN107369750B (zh) * | 2016-05-11 | 2019-06-25 | 群创光电股份有限公司 | 显示装置 |
JP7196792B2 (ja) * | 2019-07-11 | 2022-12-27 | 株式会社ニューフレアテクノロジー | マルチビーム描画方法及びマルチビーム描画装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391A (en) * | 1847-12-11 | Island | ||
US3970958A (en) * | 1974-10-15 | 1976-07-20 | Xerox Corporation | Electrically pumped, solid-state distributed feedback laser with particular grating spacing |
JPH0290688A (ja) * | 1988-09-28 | 1990-03-30 | Nec Corp | 分布帰還型半導体レーザ |
US4993036A (en) * | 1988-09-28 | 1991-02-12 | Canon Kabushiki Kaisha | Semiconductor laser array including lasers with reflecting means having different wavelength selection properties |
JPH03110884A (ja) | 1989-09-26 | 1991-05-10 | Nippon Telegr & Teleph Corp <Ntt> | 分布帰還型半導体レーザーおよびその製造方法 |
JPH03110885A (ja) | 1989-09-26 | 1991-05-10 | Nippon Telegr & Teleph Corp <Ntt> | 分布帰還型半導体レーザー |
US5295150A (en) * | 1992-12-11 | 1994-03-15 | Eastman Kodak Company | Distributed feedback-channeled substrate planar semiconductor laser |
US5565693A (en) * | 1993-01-07 | 1996-10-15 | Nec Corporation | Semiconductor optical integrated circuits |
JP3611593B2 (ja) * | 1994-02-14 | 2005-01-19 | 日本オプネクスト株式会社 | 半導体光素子の作製方法 |
DE69521157T2 (de) * | 1994-02-18 | 2001-11-08 | Canon K.K., Tokio/Tokyo | Polarisationsselektiver Halbleiterlaser, Lichtsender und optisches Kommunikationssystem unter Verwendung dieses Lasers |
FR2744292B1 (fr) * | 1996-01-29 | 1998-04-30 | Menigaux Louis | Composant d'emission laser multi-longueur d'onde |
JPH1098235A (ja) * | 1996-08-01 | 1998-04-14 | Pioneer Electron Corp | 無再成長分布帰還リッジ型半導体レーザ及びその製造方法 |
JPH10117040A (ja) * | 1996-10-08 | 1998-05-06 | Nec Corp | 半導体レーザ素子及びその製造方法 |
JP3307905B2 (ja) * | 1999-12-28 | 2002-07-29 | 日本電気株式会社 | 光半導体装置およびその製造方法 |
-
1999
- 1999-11-26 JP JP33595199A patent/JP3847038B2/ja not_active Expired - Fee Related
-
2000
- 2000-11-24 EP EP00125803A patent/EP1104060B1/de not_active Expired - Lifetime
- 2000-11-24 DE DE60010837T patent/DE60010837T2/de not_active Expired - Fee Related
- 2000-11-27 US US09/721,662 patent/US6707839B1/en not_active Expired - Lifetime
-
2004
- 2004-01-20 US US10/759,275 patent/US7083995B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6707839B1 (en) | 2004-03-16 |
JP3847038B2 (ja) | 2006-11-15 |
US20040156411A1 (en) | 2004-08-12 |
DE60010837T2 (de) | 2005-06-23 |
US7083995B2 (en) | 2006-08-01 |
EP1104060A2 (de) | 2001-05-30 |
JP2001156391A (ja) | 2001-06-08 |
EP1104060B1 (de) | 2004-05-19 |
EP1104060A3 (de) | 2002-07-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |