DE60014907D1 - Schleifmittelzusammensetzung - Google Patents

Schleifmittelzusammensetzung

Info

Publication number
DE60014907D1
DE60014907D1 DE2000614907 DE60014907T DE60014907D1 DE 60014907 D1 DE60014907 D1 DE 60014907D1 DE 2000614907 DE2000614907 DE 2000614907 DE 60014907 T DE60014907 T DE 60014907T DE 60014907 D1 DE60014907 D1 DE 60014907D1
Authority
DE
Germany
Prior art keywords
abrasive composition
abrasive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2000614907
Other languages
English (en)
Other versions
DE60014907T2 (de
Inventor
Yasuhiro Yoneda
Ryoichi Hashimoto
Toshiya Hagihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Publication of DE60014907D1 publication Critical patent/DE60014907D1/de
Application granted granted Critical
Publication of DE60014907T2 publication Critical patent/DE60014907T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE60014907T 1999-07-13 2000-07-07 Schleifmittelzusammensetzung Expired - Lifetime DE60014907T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP19826399 1999-07-13
JP19826399 1999-07-13
JP2000030477 2000-02-08
JP2000030477 2000-02-08
PCT/JP2000/004571 WO2001004231A1 (en) 1999-07-13 2000-07-07 Polishing liquid composition

Publications (2)

Publication Number Publication Date
DE60014907D1 true DE60014907D1 (de) 2004-11-18
DE60014907T2 DE60014907T2 (de) 2006-03-09

Family

ID=26510869

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60014907T Expired - Lifetime DE60014907T2 (de) 1999-07-13 2000-07-07 Schleifmittelzusammensetzung

Country Status (6)

Country Link
US (3) US7118685B1 (de)
EP (1) EP1198534B1 (de)
KR (2) KR100490963B1 (de)
DE (1) DE60014907T2 (de)
TW (1) TW467794B (de)
WO (1) WO2001004231A1 (de)

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US7118685B1 (en) * 1999-07-13 2006-10-10 Kao Corporation Polishing liquid composition
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
WO2003104350A1 (en) * 2002-06-07 2003-12-18 Showa Denko K.K. Metal polish composition, polishing method using the composition and method for producing wafer using the polishing method
KR20050071677A (ko) * 2002-11-08 2005-07-07 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 린싱용 조성물
KR100850878B1 (ko) * 2002-12-20 2008-08-07 주식회사 동진쎄미켐 금속막의 화학-기계적 연마 슬러리 조성물
JP2004273547A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
JP5147185B2 (ja) * 2005-01-24 2013-02-20 昭和電工株式会社 研磨組成物及び研磨方法
KR100661273B1 (ko) * 2005-04-28 2006-12-26 테크노세미켐 주식회사 고단차 산화막의 평탄화를 위한 화학기계적 연마조성물
EP1880410A2 (de) * 2005-05-13 2008-01-23 Sachem, Inc. Selektive nassätzung von oxiden
US7316977B2 (en) 2005-08-24 2008-01-08 Air Products And Chemicals, Inc. Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
TW200734436A (en) * 2006-01-30 2007-09-16 Fujifilm Corp Metal-polishing liquid and chemical mechanical polishing method using the same
US20070176142A1 (en) * 2006-01-31 2007-08-02 Fujifilm Corporation Metal- polishing liquid and chemical-mechanical polishing method using the same
JP2007214518A (ja) * 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
WO2009032460A1 (en) * 2007-08-02 2009-03-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of residue from a microelectronic device
US8778803B2 (en) * 2007-09-21 2014-07-15 Hitachi Chemical Company, Ltd. CPM slurry for silicon film polishing and polishing method
US8337716B2 (en) * 2008-01-23 2012-12-25 Uwiz Technology Co., Ltd. Sarcosine compound used as corrosion inhibitor
WO2009154164A1 (ja) * 2008-06-18 2009-12-23 株式会社 フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
KR101752684B1 (ko) 2008-10-21 2017-07-04 엔테그리스, 아이엔씨. 구리 세척 및 보호 조성물
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
US9368367B2 (en) * 2009-04-13 2016-06-14 Sinmat, Inc. Chemical mechanical polishing of silicon carbide comprising surfaces
US8426349B2 (en) * 2009-05-26 2013-04-23 Delaval Holding Ab Chlorinated alkaline pipeline cleaner with methane sulfonic acid
FR2965260B1 (fr) * 2010-09-27 2012-08-31 Arkema France Composition neutralisante et biostatique pour fluides aqueux
KR102048022B1 (ko) * 2012-12-18 2019-12-02 주식회사 동진쎄미켐 금속막 식각액 조성물 및 이를 이용한 식각 방법
KR20150103169A (ko) * 2013-01-04 2015-09-09 가부시키가이샤 후지미인코퍼레이티드 합금 재료의 연마 방법 및 합금 재료의 제조 방법
KR102087791B1 (ko) * 2013-03-27 2020-03-12 삼성디스플레이 주식회사 식각 조성물, 이를 이용한 금속 패턴의 형성 방법 및 표시 기판의 제조방법
RU2561086C1 (ru) * 2014-02-07 2015-08-20 Константин Борисович Голубев Жидкая полировальная паста
KR101741707B1 (ko) * 2015-02-27 2017-05-30 유비머트리얼즈주식회사 연마 슬러리 및 이를 이용한 기판 연마 방법
US10515820B2 (en) 2016-03-30 2019-12-24 Tokyo Electron Limited Process and apparatus for processing a nitride structure without silica deposition
US10325779B2 (en) 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
CN106433647B (zh) * 2016-09-19 2019-02-15 苏州诺菲纳米科技有限公司 基于纳米银导电膜的蚀刻膏及其制备方法
CN112030165B (zh) * 2020-08-28 2022-05-20 武汉迪赛新材料有限公司 Tft-lcd制程用铜钼合层蚀刻液

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US7118685B1 (en) * 1999-07-13 2006-10-10 Kao Corporation Polishing liquid composition
JP4075247B2 (ja) * 1999-09-30 2008-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体
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Also Published As

Publication number Publication date
EP1198534A1 (de) 2002-04-24
WO2001004231A1 (en) 2001-01-18
US20060240672A1 (en) 2006-10-26
US7604751B2 (en) 2009-10-20
KR20020026947A (ko) 2002-04-12
EP1198534B1 (de) 2004-10-13
TW467794B (en) 2001-12-11
KR100525031B1 (ko) 2005-10-31
DE60014907T2 (de) 2006-03-09
KR100490963B1 (ko) 2005-05-24
US20070045233A1 (en) 2007-03-01
KR20050005562A (ko) 2005-01-13
US7118685B1 (en) 2006-10-10

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