DE59304797D1 - Leistungshalbleiter-Modul - Google Patents

Leistungshalbleiter-Modul

Info

Publication number
DE59304797D1
DE59304797D1 DE59304797T DE59304797T DE59304797D1 DE 59304797 D1 DE59304797 D1 DE 59304797D1 DE 59304797 T DE59304797 T DE 59304797T DE 59304797 T DE59304797 T DE 59304797T DE 59304797 D1 DE59304797 D1 DE 59304797D1
Authority
DE
Germany
Prior art keywords
power semiconductor
semiconductor module
module
power
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE59304797T
Other languages
English (en)
Inventor
Gerhard Dipl Ing Schulze
Karl-Heinz Dr Rer Nat Sommer
Reinhold Dipl Ing Spanke
Gyoergy Dr Papp
Walter Springmann
Peter Zwanziger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Siemens AG
Original Assignee
Siemens AG
EUPEC GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, EUPEC GmbH filed Critical Siemens AG
Application granted granted Critical
Publication of DE59304797D1 publication Critical patent/DE59304797D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Power Conversion In General (AREA)
  • Rectifiers (AREA)
DE59304797T 1992-08-26 1993-08-12 Leistungshalbleiter-Modul Expired - Lifetime DE59304797D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92114544 1992-08-26

Publications (1)

Publication Number Publication Date
DE59304797D1 true DE59304797D1 (de) 1997-01-30

Family

ID=8209943

Family Applications (1)

Application Number Title Priority Date Filing Date
DE59304797T Expired - Lifetime DE59304797D1 (de) 1992-08-26 1993-08-12 Leistungshalbleiter-Modul

Country Status (3)

Country Link
US (1) US5459356A (de)
JP (1) JP3268081B2 (de)
DE (1) DE59304797D1 (de)

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JP3258200B2 (ja) * 1995-05-31 2002-02-18 株式会社東芝 圧接型半導体装置
JP3185540B2 (ja) * 1994-06-10 2001-07-11 松下電器産業株式会社 半導体集積回路
JP3588503B2 (ja) * 1995-06-20 2004-11-10 株式会社東芝 圧接型半導体装置
US5748456A (en) * 1995-11-24 1998-05-05 Asea Brown Boveri Ag Power semiconductor module system
US5998227A (en) * 1996-02-01 1999-12-07 International Rectifier Corporation IGBT and free-wheeling diode combination
US6404045B1 (en) 1996-02-01 2002-06-11 International Rectifier Corporation IGBT and free-wheeling diode combination
US5679979A (en) * 1996-05-21 1997-10-21 Weingand; Christopher Dirk Surface mount package with heat transfer feature
US6954368B1 (en) 1996-07-22 2005-10-11 HYDRO-QUéBEC Low stray interconnection inductance power converting molecule for converting a DC voltage into an AC voltage, and a method therefor
DE10019812B4 (de) * 2000-04-20 2008-01-17 Infineon Technologies Ag Schaltungsanordnung
JP4004715B2 (ja) * 2000-05-31 2007-11-07 三菱電機株式会社 パワーモジュール
US6651366B1 (en) 2000-06-08 2003-11-25 John Duncan Modular graphic display system
DE10037533C1 (de) * 2000-08-01 2002-01-31 Semikron Elektronik Gmbh Induktivitätsarme Schaltungsanordnung
JP4089143B2 (ja) * 2000-08-30 2008-05-28 三菱電機株式会社 電力用半導体装置
US6845017B2 (en) 2000-09-20 2005-01-18 Ballard Power Systems Corporation Substrate-level DC bus design to reduce module inductance
US20020034088A1 (en) 2000-09-20 2002-03-21 Scott Parkhill Leadframe-based module DC bus design to reduce module inductance
US7012810B2 (en) * 2000-09-20 2006-03-14 Ballard Power Systems Corporation Leadframe-based module DC bus design to reduce module inductance
DE10054489A1 (de) * 2000-11-03 2002-05-29 Zf Sachs Ag Leistungs-Umrichtermodul
JP4601874B2 (ja) * 2001-07-30 2010-12-22 三菱電機株式会社 半導体装置
US6939743B2 (en) * 2002-01-29 2005-09-06 Advanced Power Technology, Inc. Split-gate power module and method for suppressing oscillation therein
DE10237561C1 (de) * 2002-08-16 2003-10-16 Semikron Elektronik Gmbh Induktivitätsarme Schaltungsanordnung bzw. Schaltungsaufbau für Leistungshalbleitermodule
DE10255629A1 (de) * 2002-11-28 2004-06-24 Siemens Ag Schaltungsanordnung und Spannungswandler
US7256566B2 (en) * 2003-05-02 2007-08-14 Ballard Power Systems Corporation Method and apparatus for determining a maximum power point of photovoltaic cells
US7269036B2 (en) * 2003-05-12 2007-09-11 Siemens Vdo Automotive Corporation Method and apparatus for adjusting wakeup time in electrical power converter systems and transformer isolation
US6987670B2 (en) * 2003-05-16 2006-01-17 Ballard Power Systems Corporation Dual power module power system architecture
US6906404B2 (en) * 2003-05-16 2005-06-14 Ballard Power Systems Corporation Power module with voltage overshoot limiting
US7505294B2 (en) * 2003-05-16 2009-03-17 Continental Automotive Systems Us, Inc. Tri-level inverter
US7443692B2 (en) * 2003-05-16 2008-10-28 Continental Automotive Systems Us, Inc. Power converter architecture employing at least one capacitor across a DC bus
JP4342232B2 (ja) * 2003-07-11 2009-10-14 三菱電機株式会社 半導体パワーモジュールおよび該モジュールの主回路電流値を計測する主回路電流計測システム
DE10333328B3 (de) * 2003-07-23 2005-01-27 Semikron Elektronik Gmbh Leistungshalbleitermodul in skalierbarer Aufbautechnik
US20050128706A1 (en) * 2003-12-16 2005-06-16 Ballard Power Systems Corporation Power module with heat exchange
US7295448B2 (en) * 2004-06-04 2007-11-13 Siemens Vdo Automotive Corporation Interleaved power converter
US7289329B2 (en) * 2004-06-04 2007-10-30 Siemens Vdo Automotive Corporation Integration of planar transformer and/or planar inductor with power switches in power converter
US7180763B2 (en) * 2004-09-21 2007-02-20 Ballard Power Systems Corporation Power converter
JP2008517582A (ja) * 2004-10-20 2008-05-22 シーメンス ヴィディーオー オートモーティヴ コーポレイション 電力システム、方法および装置
JP4547231B2 (ja) * 2004-10-22 2010-09-22 日立オートモティブシステムズ株式会社 電力変換装置
US7170180B2 (en) * 2004-12-20 2007-01-30 General Electric Company Methods and systems for improved current sharing between parallel power semiconductors in power converters
JP2009500994A (ja) * 2005-06-30 2009-01-08 シーメンス ヴィディーオー オートモーティヴ コーポレイション 電気駆動機構に好適な制御方法、制御装置及び制御部材
JP4826845B2 (ja) * 2009-02-10 2011-11-30 三菱電機株式会社 パワー半導体モジュール
DE102009002191B4 (de) * 2009-04-03 2012-07-12 Infineon Technologies Ag Leistungshalbleitermodul, Leistungshalbleitermodulanordnung und Verfahren zur Herstellung einer Leistungshalbleitermodulanordnung
JP5707302B2 (ja) * 2011-11-02 2015-04-30 株式会社 日立パワーデバイス パワー半導体モジュール
CN107293534B (zh) * 2012-03-01 2020-06-09 三菱电机株式会社 电力用半导体模块以及电力变换装置
JP6430240B2 (ja) * 2014-12-26 2018-11-28 株式会社東芝 回転整流器及び交流発電システム
DE102015210796A1 (de) * 2015-06-12 2016-12-15 Siemens Aktiengesellschaft Leistungsstromrichter mit parallel geschalteten Halbleiterschaltern
JP2017050488A (ja) 2015-09-04 2017-03-09 株式会社東芝 半導体パッケージ
JP2018182119A (ja) * 2017-04-17 2018-11-15 三菱電機株式会社 半導体装置
JP6717270B2 (ja) * 2017-07-27 2020-07-01 株式会社デンソー 半導体モジュール
WO2020047583A1 (en) * 2018-09-03 2020-03-12 Milspec Technologies Pty Ltd A dc to dc converter for a vehicle alternator

Family Cites Families (9)

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DE427143C (de) * 1920-08-06 1926-03-27 Duncan James Ritchie Scheinwerferlampe, insbesondere fuer Automobile, mit Reflektor, Projektionslinse undObturator
JPS5688350A (en) * 1979-12-19 1981-07-17 Toshiba Corp Semiconductor device
DE3420535C2 (de) * 1984-06-01 1986-04-30 Anton Piller GmbH & Co KG, 3360 Osterode Halbleiter-Modul für eine schnelle Schaltanordnung
US4907068A (en) * 1987-01-21 1990-03-06 Siemens Aktiengesellschaft Semiconductor arrangement having at least one semiconductor body
US4816984A (en) * 1987-02-06 1989-03-28 Siemens Aktiengesellschaft Bridge arm with transistors and recovery diodes
DE4032370A1 (de) * 1990-10-12 1992-04-16 Philips Patentverwaltung Schaltungsanordnung mit wenigstens zwei identischen, integrierten schaltungen oder schaltungsmodulen
JPH0512862A (ja) * 1991-06-29 1993-01-22 Toshiba Corp 半導体集積回路装置
JPH0529457A (ja) * 1991-07-24 1993-02-05 Mitsubishi Electric Corp 半導体集積回路
DE9203000U1 (de) * 1992-03-06 1992-06-17 Siemens AG, 8000 München Halbleiteranordnung mit mehreren Halbleiterkörpern

Also Published As

Publication number Publication date
JPH07297362A (ja) 1995-11-10
JP3268081B2 (ja) 2002-03-25
US5459356A (en) 1995-10-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SIEMENS AG, 80333 MUENCHEN, DE

Owner name: INFINEON TECHNOLOGIES AG, 81669 MUENCHEN, DE