DE4426364B8 - Halbleiterbauelement mit einem selbstjustiert angeordneten Kontakt und Verfahren zu seiner Herstellung - Google Patents
Halbleiterbauelement mit einem selbstjustiert angeordneten Kontakt und Verfahren zu seiner Herstellung Download PDFInfo
- Publication number
- DE4426364B8 DE4426364B8 DE4426364A DE4426364A DE4426364B8 DE 4426364 B8 DE4426364 B8 DE 4426364B8 DE 4426364 A DE4426364 A DE 4426364A DE 4426364 A DE4426364 A DE 4426364A DE 4426364 B8 DE4426364 B8 DE 4426364B8
- Authority
- DE
- Germany
- Prior art keywords
- self
- production
- semiconductor component
- aligned contact
- aligned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930014472A KR960015490B1 (ko) | 1993-07-28 | 1993-07-28 | 반도체장치 및 그 제조방법 |
KR93-14472 | 1993-07-28 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE4426364A1 DE4426364A1 (de) | 1995-02-16 |
DE4426364B4 DE4426364B4 (de) | 2004-08-05 |
DE4426364B8 true DE4426364B8 (de) | 2004-10-28 |
Family
ID=19360266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4426364A Expired - Fee Related DE4426364B8 (de) | 1993-07-28 | 1994-07-26 | Halbleiterbauelement mit einem selbstjustiert angeordneten Kontakt und Verfahren zu seiner Herstellung |
Country Status (5)
Country | Link |
---|---|
US (2) | US5583357A (de) |
JP (1) | JP3510922B2 (de) |
KR (1) | KR960015490B1 (de) |
DE (1) | DE4426364B8 (de) |
GB (1) | GB2280546B (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5710073A (en) * | 1996-01-16 | 1998-01-20 | Vanguard International Semiconductor Corporation | Method for forming interconnections and conductors for high density integrated circuits |
US6096636A (en) * | 1996-02-06 | 2000-08-01 | Micron Technology, Inc. | Methods of forming conductive lines |
JP3941133B2 (ja) | 1996-07-18 | 2007-07-04 | 富士通株式会社 | 半導体装置およびその製造方法 |
US6344389B1 (en) | 1999-04-19 | 2002-02-05 | International Business Machines Corporation | Self-aligned damascene interconnect |
JP2005236322A (ja) * | 2005-03-30 | 2005-09-02 | Fujitsu Ltd | 半導体装置とその製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3910033A1 (de) * | 1988-03-25 | 1989-10-05 | Toshiba Kawasaki Kk | Halbleiterspeicher und verfahren zu dessen herstellung |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6097665A (ja) * | 1983-11-01 | 1985-05-31 | Fujitsu Ltd | 半導体記憶装置 |
US5172202A (en) * | 1989-05-31 | 1992-12-15 | Nec Corporation | Semiconductor memory cell having high density structure |
US5236859A (en) * | 1990-06-05 | 1993-08-17 | Samsung Electronics Co., Ltd. | Method of making stacked-capacitor for a dram cell same |
KR940001426B1 (ko) * | 1991-03-27 | 1994-02-23 | 삼성전자 주식회사 | 고집적 반도체 메모리장치 및 그 제조방법 |
KR960003864B1 (ko) * | 1992-01-06 | 1996-03-23 | 삼성전자주식회사 | 반도체 메모리장치 및 그 제조방법 |
-
1993
- 1993-07-28 KR KR1019930014472A patent/KR960015490B1/ko not_active IP Right Cessation
-
1994
- 1994-07-08 JP JP15707694A patent/JP3510922B2/ja not_active Expired - Fee Related
- 1994-07-26 DE DE4426364A patent/DE4426364B8/de not_active Expired - Fee Related
- 1994-07-28 GB GB9415259A patent/GB2280546B/en not_active Expired - Fee Related
- 1994-07-28 US US08/281,641 patent/US5583357A/en not_active Expired - Lifetime
-
1995
- 1995-11-03 US US08/552,535 patent/US5639682A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3910033A1 (de) * | 1988-03-25 | 1989-10-05 | Toshiba Kawasaki Kk | Halbleiterspeicher und verfahren zu dessen herstellung |
Also Published As
Publication number | Publication date |
---|---|
US5583357A (en) | 1996-12-10 |
GB2280546A (en) | 1995-02-01 |
KR960015490B1 (ko) | 1996-11-14 |
DE4426364A1 (de) | 1995-02-16 |
GB2280546B (en) | 1997-11-19 |
KR950004415A (ko) | 1995-02-18 |
JPH07147330A (ja) | 1995-06-06 |
GB9415259D0 (en) | 1994-09-21 |
DE4426364B4 (de) | 2004-08-05 |
JP3510922B2 (ja) | 2004-03-29 |
US5639682A (en) | 1997-06-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8128 | New person/name/address of the agent |
Representative=s name: PATENTANWAELTE RUFF, WILHELM, BEIER, DAUSTER & PAR |
|
8396 | Reprint of erroneous front page | ||
8364 | No opposition during term of opposition | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20120201 |