DE3881150D1 - Wiedergabeanordnung mit lateralen schottky-dioden. - Google Patents
Wiedergabeanordnung mit lateralen schottky-dioden.Info
- Publication number
- DE3881150D1 DE3881150D1 DE8888202200T DE3881150T DE3881150D1 DE 3881150 D1 DE3881150 D1 DE 3881150D1 DE 8888202200 T DE8888202200 T DE 8888202200T DE 3881150 T DE3881150 T DE 3881150T DE 3881150 D1 DE3881150 D1 DE 3881150D1
- Authority
- DE
- Germany
- Prior art keywords
- playback
- schottky diodes
- lateral schottky
- lateral
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8702490A NL8702490A (nl) | 1987-10-19 | 1987-10-19 | Weergeefinrichting met laterale schottky-dioden. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3881150D1 true DE3881150D1 (de) | 1993-06-24 |
DE3881150T2 DE3881150T2 (de) | 1993-12-02 |
Family
ID=19850790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88202200T Expired - Fee Related DE3881150T2 (de) | 1987-10-19 | 1988-10-04 | Wiedergabeanordnung mit lateralen Schottky-Dioden. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4952984A (de) |
EP (1) | EP0314211B1 (de) |
JP (1) | JPH0810305B2 (de) |
KR (1) | KR890007425A (de) |
DE (1) | DE3881150T2 (de) |
NL (1) | NL8702490A (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03109526A (ja) * | 1989-06-20 | 1991-05-09 | Japan Synthetic Rubber Co Ltd | 液晶表示装置用アクティブマトリックス基板 |
US5075740A (en) * | 1991-01-28 | 1991-12-24 | Sanken Electric Co., Ltd. | High speed, high voltage schottky semiconductor device |
EP0521565B1 (de) * | 1991-07-04 | 1998-01-07 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung und Verfahren zum Herstellen derselben, Wiedergabeanordnung mit einer derartigen Halbleiteranordnung |
KR20000027508A (ko) * | 1998-10-28 | 2000-05-15 | 김영환 | 표시장치 |
JP3693843B2 (ja) * | 1999-02-25 | 2005-09-14 | 株式会社日立製作所 | 液晶表示装置 |
KR100388272B1 (ko) * | 2000-12-26 | 2003-06-19 | 삼성에스디아이 주식회사 | 티알에스 소자 |
JP2002303879A (ja) * | 2001-04-03 | 2002-10-18 | Nec Corp | アクティブマトリクス基板及びその製造方法 |
EP1584114A1 (de) * | 2003-01-17 | 2005-10-12 | Diode Solutions, Inc. | Display mit einem organischen material |
JP4424982B2 (ja) * | 2003-12-26 | 2010-03-03 | 富士通コンポーネント株式会社 | タッチパネル及びその製造方法 |
WO2006085241A1 (en) * | 2005-02-14 | 2006-08-17 | Koninklijke Philips Electronics N.V. | Active matrix display devices |
RU2445258C2 (ru) * | 2006-04-04 | 2012-03-20 | Калисолар Канада Инк. | Способ очистки кремния |
US8222077B2 (en) * | 2006-11-07 | 2012-07-17 | Cbrite Inc. | Metal-insulator-metal (MIM) devices and their methods of fabrication |
US7898042B2 (en) | 2006-11-07 | 2011-03-01 | Cbrite Inc. | Two-terminal switching devices and their methods of fabrication |
US9741901B2 (en) | 2006-11-07 | 2017-08-22 | Cbrite Inc. | Two-terminal electronic devices and their methods of fabrication |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4223308A (en) * | 1979-07-25 | 1980-09-16 | Northern Telecom Limited | LCDs (Liquid crystal displays) controlled by thin film diode switches |
JPS5817680A (ja) * | 1981-07-23 | 1983-02-01 | Toshiba Corp | 半導体装置 |
FR2518788A1 (fr) * | 1981-12-23 | 1983-06-24 | Thomson Csf | Dispositif a resistance dependant de la tension, son procede de fabrication et sa mise en oeuvre dans un ecran de visualisation a commande electrique |
FR2540290A1 (fr) * | 1983-01-28 | 1984-08-03 | Thomson Csf | Diode hyperfrequence a faible capacite parasite, et procede de realisation d'une telle diode |
DE3424085A1 (de) * | 1983-06-29 | 1985-01-17 | Citizen Watch Co., Ltd., Tokio/Tokyo | Verfahren zur herstellung von hoechstminiaturisierten duennschichtdioden |
FR2579775B1 (fr) * | 1985-04-02 | 1987-05-15 | Thomson Csf | Procede de realisation d'elements de commande non lineaire pour ecran plat de visualisation electro-optique et ecran plat realise selon ce procede |
NL8502663A (nl) * | 1985-09-30 | 1987-04-16 | Philips Nv | Weergeefinrichting met verbeterde aansturing. |
JPS62109085A (ja) * | 1985-11-08 | 1987-05-20 | 富士電機株式会社 | アクテイブ・マトリクス |
US4907040A (en) * | 1986-09-17 | 1990-03-06 | Konishiroku Photo Industry Co., Ltd. | Thin film Schottky barrier device |
-
1987
- 1987-10-19 NL NL8702490A patent/NL8702490A/nl not_active Application Discontinuation
-
1988
- 1988-09-27 US US07/250,008 patent/US4952984A/en not_active Expired - Fee Related
- 1988-10-04 EP EP88202200A patent/EP0314211B1/de not_active Expired - Lifetime
- 1988-10-04 DE DE88202200T patent/DE3881150T2/de not_active Expired - Fee Related
- 1988-10-18 KR KR1019880013553A patent/KR890007425A/ko not_active Application Discontinuation
- 1988-10-18 JP JP26068488A patent/JPH0810305B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3881150T2 (de) | 1993-12-02 |
EP0314211B1 (de) | 1993-05-19 |
KR890007425A (ko) | 1989-06-19 |
NL8702490A (nl) | 1989-05-16 |
JPH01154031A (ja) | 1989-06-16 |
EP0314211A1 (de) | 1989-05-03 |
JPH0810305B2 (ja) | 1996-01-31 |
US4952984A (en) | 1990-08-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |