DE3856275T2 - Kristalline Gegenstände und Verfahren zu ihrer Herstellung - Google Patents
Kristalline Gegenstände und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE3856275T2 DE3856275T2 DE19883856275 DE3856275T DE3856275T2 DE 3856275 T2 DE3856275 T2 DE 3856275T2 DE 19883856275 DE19883856275 DE 19883856275 DE 3856275 T DE3856275 T DE 3856275T DE 3856275 T2 DE3856275 T2 DE 3856275T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- processes
- crystalline articles
- crystalline
- articles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02645—Seed materials
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62073516A JP2592834B2 (ja) | 1987-03-27 | 1987-03-27 | 結晶物品およびその形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3856275D1 DE3856275D1 (de) | 1999-01-14 |
DE3856275T2 true DE3856275T2 (de) | 1999-05-12 |
Family
ID=13520487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19883856275 Expired - Fee Related DE3856275T2 (de) | 1987-03-27 | 1988-03-25 | Kristalline Gegenstände und Verfahren zu ihrer Herstellung |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0284433B1 (de) |
JP (1) | JP2592834B2 (de) |
CA (1) | CA1339827C (de) |
DE (1) | DE3856275T2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE68913254T2 (de) * | 1988-10-02 | 1994-07-07 | Canon Kk | Gegenstand aus Kristall und Verfahren zu seiner Herstellung. |
JP3207918B2 (ja) * | 1991-04-22 | 2001-09-10 | キヤノン株式会社 | Iii−v族化合物の多結晶半導体材料を用いた発光素子およびその製造方法 |
EP0514889B1 (de) * | 1991-05-23 | 1997-03-12 | Canon Kabushiki Kaisha | Lichtemittierende Vorrichtung, optischer Druckkopf mit solcher Vorrichtung, und optischer Drucker mit solchem Druckkopf |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3620833A (en) * | 1966-12-23 | 1971-11-16 | Texas Instruments Inc | Integrated circuit fabrication |
JPS6046074B2 (ja) * | 1981-06-30 | 1985-10-14 | 日本電信電話株式会社 | 半導体結晶成長方法 |
US4657603A (en) * | 1984-10-10 | 1987-04-14 | Siemens Aktiengesellschaft | Method for the manufacture of gallium arsenide thin film solar cells |
JPH0782996B2 (ja) * | 1986-03-28 | 1995-09-06 | キヤノン株式会社 | 結晶の形成方法 |
-
1987
- 1987-03-27 JP JP62073516A patent/JP2592834B2/ja not_active Expired - Fee Related
-
1988
- 1988-03-25 CA CA 562511 patent/CA1339827C/en not_active Expired - Fee Related
- 1988-03-25 DE DE19883856275 patent/DE3856275T2/de not_active Expired - Fee Related
- 1988-03-25 EP EP88302717A patent/EP0284433B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0284433B1 (de) | 1998-12-02 |
EP0284433A2 (de) | 1988-09-28 |
CA1339827C (en) | 1998-04-21 |
JP2592834B2 (ja) | 1997-03-19 |
JPS63239186A (ja) | 1988-10-05 |
EP0284433A3 (de) | 1989-03-08 |
DE3856275D1 (de) | 1999-01-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |