DE3850996T2 - Musteraufzeichnungsgerät mit Mehrfach-Elektronenstrahl. - Google Patents

Musteraufzeichnungsgerät mit Mehrfach-Elektronenstrahl.

Info

Publication number
DE3850996T2
DE3850996T2 DE3850996T DE3850996T DE3850996T2 DE 3850996 T2 DE3850996 T2 DE 3850996T2 DE 3850996 T DE3850996 T DE 3850996T DE 3850996 T DE3850996 T DE 3850996T DE 3850996 T2 DE3850996 T2 DE 3850996T2
Authority
DE
Germany
Prior art keywords
electron beam
beam pattern
pattern recorder
recorder
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3850996T
Other languages
English (en)
Other versions
DE3850996D1 (de
Inventor
Masahiko Okunuki
Isamu Shimoda
Mamoru Miyawaki
Takeo Tsukamoto
Akira Suzuki
Tetsuya Kaneko
Toshihiko Takeda
Mitsuaki Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62103027A external-priority patent/JPS63269523A/ja
Priority claimed from JP62103028A external-priority patent/JPH0752707B2/ja
Priority claimed from JP10303887A external-priority patent/JPS63269531A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3850996D1 publication Critical patent/DE3850996D1/de
Publication of DE3850996T2 publication Critical patent/DE3850996T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
DE3850996T 1987-04-28 1988-04-27 Musteraufzeichnungsgerät mit Mehrfach-Elektronenstrahl. Expired - Lifetime DE3850996T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62103027A JPS63269523A (ja) 1987-04-28 1987-04-28 荷電ビ−ム装置
JP62103028A JPH0752707B2 (ja) 1987-04-28 1987-04-28 荷電ビ−ム装置
JP10303887A JPS63269531A (ja) 1987-04-28 1987-04-28 荷電ビ−ム装置

Publications (2)

Publication Number Publication Date
DE3850996D1 DE3850996D1 (de) 1994-09-15
DE3850996T2 true DE3850996T2 (de) 1994-12-15

Family

ID=27309868

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850996T Expired - Lifetime DE3850996T2 (de) 1987-04-28 1988-04-27 Musteraufzeichnungsgerät mit Mehrfach-Elektronenstrahl.

Country Status (3)

Country Link
US (1) US4897552A (de)
EP (1) EP0289279B1 (de)
DE (1) DE3850996T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172331A (en) * 1989-12-18 1992-12-15 Fujitsu Limited Apparatus and method for effecting exposure of sample to charged particle beam
US5384463A (en) * 1991-06-10 1995-01-24 Fujisu Limited Pattern inspection apparatus and electron beam apparatus
DE69223088T2 (de) * 1991-06-10 1998-03-05 Fujitsu Ltd Apparat zur Musterüberprüfung und Elektronenstrahlgerät
US5557105A (en) * 1991-06-10 1996-09-17 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
JPH07191199A (ja) * 1993-12-27 1995-07-28 Fujitsu Ltd 荷電粒子ビーム露光システム及び露光方法
JPH10294255A (ja) * 1997-04-17 1998-11-04 Canon Inc 電子ビーム照明装置、および該電子ビーム照明装置を備えた露光装置
JP4054445B2 (ja) * 1998-06-30 2008-02-27 株式会社東芝 荷電ビーム描画方法
JP3982913B2 (ja) * 1998-07-17 2007-09-26 株式会社アドバンテスト 荷電粒子ビーム露光装置
JP3320387B2 (ja) * 1998-09-07 2002-09-03 キヤノン株式会社 電子源の製造装置及び製造方法
JP2000182550A (ja) 1998-12-18 2000-06-30 Canon Inc 電子銃および電子銃を用いる照明装置または電子ビーム露光装置
JP2001015421A (ja) 1999-07-01 2001-01-19 Canon Inc データ作成方法およびそれを用いた荷電粒子ビーム描画装置
JP3940310B2 (ja) * 2002-04-04 2007-07-04 株式会社日立ハイテクノロジーズ 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法
JP4113032B2 (ja) * 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
US20040213129A1 (en) * 2003-04-25 2004-10-28 Marshall Daniel R. Emitter cluster for a data storage device
US7285779B2 (en) 2004-06-21 2007-10-23 Applied Materials Israel, Ltd. Methods of scanning an object that includes multiple regions of interest using an array of scanning beams
US7709792B2 (en) 2006-01-12 2010-05-04 Kla-Tencor Technologies Corporation Three-dimensional imaging using electron beam activated chemical etch
US8052885B2 (en) * 2006-01-12 2011-11-08 Kla-Tencor Corporation Structural modification using electron beam activated chemical etch
US7945086B2 (en) * 2006-01-12 2011-05-17 Kla-Tencor Technologies Corporation Tungsten plug deposition quality evaluation method by EBACE technology
WO2007100933A2 (en) * 2006-01-12 2007-09-07 Kla Tencor Technologies Corporation Etch selectivity enhancement, deposition quality evaluation, structural modification and three-dimensional imaging using electron beam activated chemical etch
US7879730B2 (en) * 2006-01-12 2011-02-01 Kla-Tencor Technologies Corporation Etch selectivity enhancement in electron beam activated chemical etch
JP2007231324A (ja) * 2006-02-28 2007-09-13 Canon Inc マルチ荷電ビーム加工装置
JP6689602B2 (ja) * 2014-12-22 2020-04-28 カール ツァイス マイクロスコーピー エルエルシー 荷電粒子ビームシステム及び方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753022A (en) * 1971-04-26 1973-08-14 Us Army Miniature, directed, electron-beam source
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
FR2443085A1 (fr) * 1978-07-24 1980-06-27 Thomson Csf Dispositif de microlithographie par bombardement electronique
GB8514390D0 (en) * 1985-06-07 1985-07-10 Turner D W Electron lithography
NL8502275A (nl) * 1985-08-19 1987-03-16 Philips Nv In slanke deelbundels opgedeelde bundel geladen deeltjes.
JPS62155517A (ja) * 1985-12-27 1987-07-10 Canon Inc パターン描画装置及び方法

Also Published As

Publication number Publication date
US4897552A (en) 1990-01-30
EP0289279A3 (en) 1990-03-21
DE3850996D1 (de) 1994-09-15
EP0289279A2 (de) 1988-11-02
EP0289279B1 (de) 1994-08-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition