DE3885863D1 - Musterherstellungsverfahren. - Google Patents

Musterherstellungsverfahren.

Info

Publication number
DE3885863D1
DE3885863D1 DE88311696T DE3885863T DE3885863D1 DE 3885863 D1 DE3885863 D1 DE 3885863D1 DE 88311696 T DE88311696 T DE 88311696T DE 3885863 T DE3885863 T DE 3885863T DE 3885863 D1 DE3885863 D1 DE 3885863D1
Authority
DE
Germany
Prior art keywords
making process
pattern making
pattern
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE88311696T
Other languages
English (en)
Inventor
Kenji Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3885863D1 publication Critical patent/DE3885863D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE88311696T 1987-12-10 1988-12-09 Musterherstellungsverfahren. Expired - Lifetime DE3885863D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62314761A JPH01154064A (ja) 1987-12-10 1987-12-10 微細パターンの形成方法

Publications (1)

Publication Number Publication Date
DE3885863D1 true DE3885863D1 (de) 1994-01-05

Family

ID=18057264

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88311696T Expired - Lifetime DE3885863D1 (de) 1987-12-10 1988-12-09 Musterherstellungsverfahren.

Country Status (4)

Country Link
US (1) US5004927A (de)
EP (1) EP0320292B1 (de)
JP (1) JPH01154064A (de)
DE (1) DE3885863D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0833654B2 (ja) * 1989-08-16 1996-03-29 松下電子工業株式会社 パターン修正装置
US5149974A (en) * 1990-10-29 1992-09-22 International Business Machines Corporation Gas delivery for ion beam deposition and etching
DE4421517A1 (de) * 1993-06-28 1995-01-05 Schlumberger Technologies Inc Verfahren zum Abtrag oder Auftrag von Material mittels eines Partikelstrahls und Vorrichtung zu seiner Durchführung
US5438197A (en) * 1993-07-09 1995-08-01 Seiko Instruments Inc. Focused ion beam apparatus
US5401972A (en) * 1993-09-02 1995-03-28 Schlumberger Technologies, Inc. Layout overlay for FIB operations
SG48773A1 (en) * 1993-09-21 1998-05-18 Advantest Corp Ic analysis system having charged particle beam apparatus
US5580419A (en) * 1994-03-23 1996-12-03 Trw Inc. Process of making semiconductor device using focused ion beam for resistless in situ etching, deposition, and nucleation
US6261850B1 (en) 1998-09-03 2001-07-17 Micron Technology, Inc. Direct writing of low carbon conductive material
US8202440B1 (en) 2002-08-27 2012-06-19 Kla-Tencor Corporation Methods and apparatus for electron beam assisted etching at low temperatures
JP2008233035A (ja) * 2007-03-23 2008-10-02 Toshiba Corp 基板検査方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
EP0198908A4 (de) * 1984-10-26 1987-03-02 Ion Beam Systems Inc Veränderung eines substrats durch einen fokussierten strahl.
JPS61123843A (ja) * 1984-11-20 1986-06-11 Seiko Instr & Electronics Ltd 集束イオンビ−ムを用いたマスク修正装置
JPS61190941A (ja) * 1985-02-19 1986-08-25 Fujitsu Ltd Ｘ線用マスクの製造方法
JP2543680B2 (ja) * 1985-10-02 1996-10-16 セイコー電子工業株式会社 マスクリペア装置
JPS62195662A (ja) * 1986-02-24 1987-08-28 Seiko Instr & Electronics Ltd マスクリペア方法及び装置
US4874947A (en) * 1988-02-26 1989-10-17 Micrion Corporation Focused ion beam imaging and process control
US4908226A (en) * 1988-05-23 1990-03-13 Hughes Aircraft Company Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams

Also Published As

Publication number Publication date
JPH01154064A (ja) 1989-06-16
EP0320292A3 (en) 1990-03-07
EP0320292B1 (de) 1993-11-24
EP0320292A2 (de) 1989-06-14
US5004927A (en) 1991-04-02

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Legal Events

Date Code Title Description
8332 No legal effect for de