DE3783249D1 - Anordnung zur stromab-bearbeitung mit mikrowellenerzeugtem plasma mit kopplungsstruktur zwischen mikrowellen und plasma. - Google Patents
Anordnung zur stromab-bearbeitung mit mikrowellenerzeugtem plasma mit kopplungsstruktur zwischen mikrowellen und plasma.Info
- Publication number
- DE3783249D1 DE3783249D1 DE8787103642T DE3783249T DE3783249D1 DE 3783249 D1 DE3783249 D1 DE 3783249D1 DE 8787103642 T DE8787103642 T DE 8787103642T DE 3783249 T DE3783249 T DE 3783249T DE 3783249 D1 DE3783249 D1 DE 3783249D1
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- microwaves
- arrangement
- coupling structure
- microwave generated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61055447A JPS62213126A (ja) | 1986-03-13 | 1986-03-13 | マイクロ波プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3783249D1 true DE3783249D1 (de) | 1993-02-11 |
DE3783249T2 DE3783249T2 (de) | 1993-04-29 |
Family
ID=12998851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787103642T Expired - Fee Related DE3783249T2 (de) | 1986-03-13 | 1987-03-13 | Anordnung zur stromab-bearbeitung mit mikrowellenerzeugtem plasma mit kopplungsstruktur zwischen mikrowellen und plasma. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4987284A (de) |
EP (1) | EP0237078B1 (de) |
JP (1) | JPS62213126A (de) |
KR (1) | KR900003613B1 (de) |
DE (1) | DE3783249T2 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0777211B2 (ja) * | 1987-08-19 | 1995-08-16 | 富士通株式会社 | アッシング方法 |
JPH01135017A (ja) * | 1987-11-20 | 1989-05-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0225577A (ja) * | 1988-07-15 | 1990-01-29 | Mitsubishi Electric Corp | 薄膜形成装置 |
KR930004115B1 (ko) * | 1988-10-31 | 1993-05-20 | 후지쓰 가부시끼가이샤 | 애싱(ashing)처리방법 및 장치 |
JP2790341B2 (ja) * | 1988-10-31 | 1998-08-27 | 富士通株式会社 | 灰化処理方法 |
JP2890432B2 (ja) * | 1989-01-10 | 1999-05-17 | 富士通株式会社 | 有機物の灰化方法 |
JPH07101685B2 (ja) * | 1989-01-26 | 1995-11-01 | 富士通株式会社 | マイクロ波プラズマ処理装置 |
JPH0744017Y2 (ja) * | 1989-03-28 | 1995-10-09 | 住友金属工業株式会社 | プラズマアッシング装置 |
FR2653633B1 (fr) * | 1989-10-19 | 1991-12-20 | Commissariat Energie Atomique | Dispositif de traitement chimique assiste par un plasma de diffusion. |
US5111111A (en) * | 1990-09-27 | 1992-05-05 | Consortium For Surface Processing, Inc. | Method and apparatus for coupling a microwave source in an electron cyclotron resonance system |
US5359177A (en) * | 1990-11-14 | 1994-10-25 | Mitsubishi Denki Kabushiki Kaisha | Microwave plasma apparatus for generating a uniform plasma |
JPH04337076A (ja) * | 1991-05-14 | 1992-11-25 | Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk | 高圧力下でのプラズマ及びラジカルcvd法による高速成膜方法 |
DE4126216B4 (de) * | 1991-08-08 | 2004-03-11 | Unaxis Deutschland Holding Gmbh | Vorrichtung für Dünnschichtverfahren zur Behandlung großflächiger Substrate |
US5302803A (en) * | 1991-12-23 | 1994-04-12 | Consortium For Surface Processing, Inc. | Apparatus and method for uniform microwave plasma processing using TE1101 modes |
JP3231426B2 (ja) * | 1992-10-28 | 2001-11-19 | 富士通株式会社 | 水素プラズマダウンフロー処理方法及び水素プラズマダウンフロー処理装置 |
US5417941A (en) * | 1994-01-14 | 1995-05-23 | E/H Technologies, Inc. | Microwave powered steam pressure generator |
JP3438109B2 (ja) * | 1994-08-12 | 2003-08-18 | 富士通株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US5714009A (en) * | 1995-01-11 | 1998-02-03 | Deposition Sciences, Inc. | Apparatus for generating large distributed plasmas by means of plasma-guided microwave power |
US6132550A (en) * | 1995-08-11 | 2000-10-17 | Sumitomo Electric Industries, Ltd. | Apparatuses for desposition or etching |
US5645644A (en) * | 1995-10-20 | 1997-07-08 | Sumitomo Metal Industries, Ltd. | Plasma processing apparatus |
US5961851A (en) * | 1996-04-02 | 1999-10-05 | Fusion Systems Corporation | Microwave plasma discharge device |
US20020142612A1 (en) * | 2001-03-30 | 2002-10-03 | Han-Ming Wu | Shielding plate in plasma for uniformity improvement |
JP3903730B2 (ja) * | 2001-04-04 | 2007-04-11 | 松下電器産業株式会社 | エッチング方法 |
KR101127294B1 (ko) * | 2003-02-14 | 2012-03-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 수소-함유 라디칼을 이용한 자연 산화물 세정 |
US7910166B2 (en) * | 2005-04-26 | 2011-03-22 | First Solar, Inc. | System and method for depositing a material on a substrate |
US7931937B2 (en) * | 2005-04-26 | 2011-04-26 | First Solar, Inc. | System and method for depositing a material on a substrate |
US7927659B2 (en) * | 2005-04-26 | 2011-04-19 | First Solar, Inc. | System and method for depositing a material on a substrate |
US7968145B2 (en) | 2005-04-26 | 2011-06-28 | First Solar, Inc. | System and method for depositing a material on a substrate |
JP4864093B2 (ja) | 2005-07-28 | 2012-01-25 | ナノコンプ テクノロジーズ インコーポレイテッド | ナノ繊維質材料の形成および収穫に関するシステムおよび方法 |
US20100270262A1 (en) * | 2009-04-22 | 2010-10-28 | Applied Materials, Inc. | Etching low-k dielectric or removing resist with a filtered ionized gas |
JP5457754B2 (ja) * | 2009-08-07 | 2014-04-02 | 株式会社日立ハイテクノロジーズ | 透過型電極体を用いたプラズマ処理装置 |
EP3064765A1 (de) * | 2015-03-03 | 2016-09-07 | MWI Micro Wave Ignition AG | Verbrennungsmotor |
EP3064767A1 (de) * | 2015-03-03 | 2016-09-07 | MWI Micro Wave Ignition AG | Verfahren und zum Einbringen von Mikrowellenenergie in einen Brennraum eines Verbrennungsmotors und Verbrennungsmotor |
US10581082B2 (en) | 2016-11-15 | 2020-03-03 | Nanocomp Technologies, Inc. | Systems and methods for making structures defined by CNT pulp networks |
US20210305024A1 (en) * | 2020-03-24 | 2021-09-30 | Texas Instruments Incorporated | Plasma cleaning for packaging electronic devices |
CN112996209B (zh) * | 2021-05-07 | 2021-08-10 | 四川大学 | 一种微波激发常压等离子体射流的结构和阵列结构 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3879597A (en) * | 1974-08-16 | 1975-04-22 | Int Plasma Corp | Plasma etching device and process |
JPS5211175A (en) * | 1975-07-18 | 1977-01-27 | Toshiba Corp | Activated gas reacting apparatus |
GB1523267A (en) * | 1976-04-15 | 1978-08-31 | Hitachi Ltd | Plasma etching apparatus |
US4304983A (en) * | 1980-06-26 | 1981-12-08 | Rca Corporation | Plasma etching device and process |
JPS5782955A (en) * | 1980-11-12 | 1982-05-24 | Hitachi Ltd | Microwave plasma generating apparatus |
US4431898A (en) * | 1981-09-01 | 1984-02-14 | The Perkin-Elmer Corporation | Inductively coupled discharge for plasma etching and resist stripping |
JPS58113377A (ja) * | 1981-12-28 | 1983-07-06 | Fujitsu Ltd | マイクロ波プラズマ処理装置 |
US4718976A (en) * | 1982-03-31 | 1988-01-12 | Fujitsu Limited | Process and apparatus for plasma treatment |
JPS5941838A (ja) * | 1982-08-31 | 1984-03-08 | Fujitsu Ltd | マイクロ波プラズマ装置 |
JPS6016424A (ja) * | 1983-07-08 | 1985-01-28 | Fujitsu Ltd | マイクロ波プラズマ処理方法及びその装置 |
JPS6025234A (ja) * | 1983-07-21 | 1985-02-08 | Fujitsu Ltd | マイクロ波プラズマ処理装置 |
JPS61131454A (ja) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | マイクロ波プラズマ処理方法と装置 |
JPS61174639A (ja) * | 1985-01-28 | 1986-08-06 | Semiconductor Energy Lab Co Ltd | 光エツチング方法 |
-
1986
- 1986-03-13 JP JP61055447A patent/JPS62213126A/ja active Granted
-
1987
- 1987-03-05 KR KR1019870001982A patent/KR900003613B1/ko not_active IP Right Cessation
- 1987-03-13 EP EP87103642A patent/EP0237078B1/de not_active Expired - Lifetime
- 1987-03-13 DE DE8787103642T patent/DE3783249T2/de not_active Expired - Fee Related
-
1990
- 1990-01-08 US US07/462,954 patent/US4987284A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0237078B1 (de) | 1992-12-30 |
JPH0521335B2 (de) | 1993-03-24 |
KR880011894A (ko) | 1988-10-31 |
EP0237078A3 (en) | 1989-09-06 |
US4987284A (en) | 1991-01-22 |
JPS62213126A (ja) | 1987-09-19 |
KR900003613B1 (ko) | 1990-05-26 |
DE3783249T2 (de) | 1993-04-29 |
EP0237078A2 (de) | 1987-09-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |