DE3778526D1 - Schaltung zur erzeugung einer zwischenspannung. - Google Patents

Schaltung zur erzeugung einer zwischenspannung.

Info

Publication number
DE3778526D1
DE3778526D1 DE8787311418T DE3778526T DE3778526D1 DE 3778526 D1 DE3778526 D1 DE 3778526D1 DE 8787311418 T DE8787311418 T DE 8787311418T DE 3778526 T DE3778526 T DE 3778526T DE 3778526 D1 DE3778526 D1 DE 3778526D1
Authority
DE
Germany
Prior art keywords
generating
circuit
intermediate voltage
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787311418T
Other languages
English (en)
Inventor
Kazuhiro C O Patent Div Sawada
Takayasu C O Patent Di Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3778526D1 publication Critical patent/DE3778526D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE8787311418T 1987-01-14 1987-12-23 Schaltung zur erzeugung einer zwischenspannung. Expired - Lifetime DE3778526D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62005108A JP2509596B2 (ja) 1987-01-14 1987-01-14 中間電位生成回路

Publications (1)

Publication Number Publication Date
DE3778526D1 true DE3778526D1 (de) 1992-05-27

Family

ID=11602161

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787311418T Expired - Lifetime DE3778526D1 (de) 1987-01-14 1987-12-23 Schaltung zur erzeugung einer zwischenspannung.

Country Status (5)

Country Link
US (1) US4812735A (de)
EP (1) EP0276572B1 (de)
JP (1) JP2509596B2 (de)
KR (1) KR900007605B1 (de)
DE (1) DE3778526D1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01269111A (ja) * 1988-04-20 1989-10-26 Matsushita Electric Ind Co Ltd 基準電圧発生回路
US5182468A (en) * 1989-02-13 1993-01-26 Ibm Corporation Current limiting clamp circuit
US5309040A (en) * 1989-11-07 1994-05-03 Fujitsu Limited Voltage reducing circuit
US5087834A (en) * 1990-03-12 1992-02-11 Texas Instruments Incorporated Buffer circuit including comparison of voltage-shifted references
US5029283A (en) * 1990-03-28 1991-07-02 Ncr Corporation Low current driver for gate array
USRE40552E1 (en) 1990-04-06 2008-10-28 Mosaid Technologies, Inc. Dynamic random access memory using imperfect isolating transistors
US5212440A (en) * 1990-05-14 1993-05-18 Micron Technology, Inc. Quick response CMOS voltage reference circuit
US5187386A (en) * 1991-01-16 1993-02-16 Samsung Semiconductor, Inc. Low standby current intermediate dc voltage generator
US5296801A (en) * 1991-07-29 1994-03-22 Kabushiki Kaisha Toshiba Bias voltage generating circuit
US5221864A (en) * 1991-12-17 1993-06-22 International Business Machines Corporation Stable voltage reference circuit with high Vt devices
JP2736483B2 (ja) * 1992-03-03 1998-04-02 三菱電機株式会社 電圧発生装置
US5302888A (en) * 1992-04-01 1994-04-12 Texas Instruments Incorporated CMOS integrated mid-supply voltage generator
JP3381937B2 (ja) * 1992-05-22 2003-03-04 株式会社東芝 中間電位発生回路
US5554953A (en) * 1992-10-07 1996-09-10 Matsushita Electric Industrial Co., Ltd. Internal reduced-voltage generator for semiconductor integrated circuit
JPH06223568A (ja) * 1993-01-29 1994-08-12 Mitsubishi Electric Corp 中間電位発生装置
KR960003219B1 (ko) * 1993-04-16 1996-03-07 삼성전자주식회사 반도체 집적회로의 중간전위 발생회로
JPH0757463A (ja) * 1993-08-18 1995-03-03 Texas Instr Japan Ltd 電圧発生回路及び１／２ｖｄｄ発生回路
US5434534A (en) * 1993-11-29 1995-07-18 Intel Corporation CMOS voltage reference circuit
JP3626521B2 (ja) 1994-02-28 2005-03-09 三菱電機株式会社 基準電位発生回路、電位検出回路および半導体集積回路装置
US5568085A (en) * 1994-05-16 1996-10-22 Waferscale Integration Inc. Unit for stabilizing voltage on a capacitive node
US5955889A (en) 1994-05-20 1999-09-21 Fujitsu Limited Electronic circuit apparatus for transmitting signals through a bus and semiconductor device for generating a predetermined stable voltage
JP3207680B2 (ja) * 1994-08-30 2001-09-10 株式会社東芝 半導体集積回路
US5786720A (en) * 1994-09-22 1998-07-28 Lsi Logic Corporation 5 volt CMOS driver circuit for driving 3.3 volt line
US5856742A (en) * 1995-06-30 1999-01-05 Harris Corporation Temperature insensitive bandgap voltage generator tracking power supply variations
JP3556328B2 (ja) * 1995-07-11 2004-08-18 株式会社ルネサステクノロジ 内部電源回路
DE19533768C1 (de) * 1995-09-12 1996-08-29 Siemens Ag Stromtreiberschaltung mit Querstromregelung
JPH09162713A (ja) * 1995-12-11 1997-06-20 Mitsubishi Electric Corp 半導体集積回路
JP3022815B2 (ja) * 1997-07-24 2000-03-21 日本電気アイシーマイコンシステム株式会社 中間電位生成回路
US5959444A (en) * 1997-12-12 1999-09-28 Micron Technology, Inc. MOS transistor circuit and method for biasing a voltage generator
FR2781317B1 (fr) * 1998-07-17 2005-08-26 St Microelectronics Sa Source de tension de basse impedance
JP4117780B2 (ja) * 2002-01-29 2008-07-16 セイコーインスツル株式会社 基準電圧回路および電子機器
US20040246042A1 (en) * 2003-05-09 2004-12-09 Ta-Yung Yang [balance apparatus for line input capacitors ]
EP2062110A1 (de) * 2006-06-26 2009-05-27 Nxp B.V. Konstantspannungserzeugungseinrichtung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310047A (en) * 1976-07-16 1978-01-30 Seiko Instr & Electronics Ltd Electronic circuit
US4100437A (en) * 1976-07-29 1978-07-11 Intel Corporation MOS reference voltage circuit
US4300061A (en) * 1979-03-15 1981-11-10 National Semiconductor Corporation CMOS Voltage regulator circuit
JPS5672530A (en) * 1979-11-19 1981-06-16 Nec Corp Semiconductor circuit
US4347476A (en) * 1980-12-04 1982-08-31 Rockwell International Corporation Voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques
JPS57157315A (en) * 1981-03-24 1982-09-28 Nec Corp Intermediate voltage generating circuit
JPS59157727A (ja) * 1983-02-28 1984-09-07 Oki Electric Ind Co Ltd 直流電圧制御回路
US4663584B1 (en) * 1985-06-10 1996-05-21 Toshiba Kk Intermediate potential generation circuit
US4675557A (en) * 1986-03-20 1987-06-23 Motorola Inc. CMOS voltage translator

Also Published As

Publication number Publication date
KR880009438A (ko) 1988-09-15
JP2509596B2 (ja) 1996-06-19
JPS63174115A (ja) 1988-07-18
EP0276572A1 (de) 1988-08-03
KR900007605B1 (ko) 1990-10-17
EP0276572B1 (de) 1992-04-22
US4812735A (en) 1989-03-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee