DE3785509D1 - Nichtfluechtige halbleiterspeicheranordnung. - Google Patents
Nichtfluechtige halbleiterspeicheranordnung.Info
- Publication number
- DE3785509D1 DE3785509D1 DE8787830234T DE3785509T DE3785509D1 DE 3785509 D1 DE3785509 D1 DE 3785509D1 DE 8787830234 T DE8787830234 T DE 8787830234T DE 3785509 T DE3785509 T DE 3785509T DE 3785509 D1 DE3785509 D1 DE 3785509D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- volatile semiconductor
- memory arrangement
- arrangement
- volatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT83630/86A IT1201834B (it) | 1986-07-10 | 1986-07-10 | Dispositivo di memoria non volatile a semiconduttore |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3785509D1 true DE3785509D1 (de) | 1993-05-27 |
DE3785509T2 DE3785509T2 (de) | 1993-07-29 |
Family
ID=11323394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787830234T Expired - Fee Related DE3785509T2 (de) | 1986-07-10 | 1987-06-22 | Nichtfluechtige halbleiterspeicheranordnung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4816883A (de) |
EP (1) | EP0255489B1 (de) |
JP (1) | JPS6329980A (de) |
DE (1) | DE3785509T2 (de) |
IT (1) | IT1201834B (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5060195A (en) * | 1989-12-29 | 1991-10-22 | Texas Instruments Incorporated | Hot electron programmable, tunnel electron erasable contactless EEPROM |
US5106772A (en) * | 1990-01-09 | 1992-04-21 | Intel Corporation | Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide |
US5260593A (en) * | 1991-12-10 | 1993-11-09 | Micron Technology, Inc. | Semiconductor floating gate device having improved channel-floating gate interaction |
US5444279A (en) * | 1993-08-11 | 1995-08-22 | Micron Semiconductor, Inc. | Floating gate memory device having discontinuous gate oxide thickness over the channel region |
US5519653A (en) * | 1994-03-11 | 1996-05-21 | Thomas; Mammen | Channel accelerated carrier tunneling-(CACT) method for programming memories |
US5471422A (en) * | 1994-04-11 | 1995-11-28 | Motorola, Inc. | EEPROM cell with isolation transistor and methods for making and operating the same |
JP3238576B2 (ja) * | 1994-08-19 | 2001-12-17 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5552338A (en) * | 1994-09-26 | 1996-09-03 | Intel Corporation | Method of using latchup current to blow a fuse in an integrated circuit |
EP0730310B1 (de) * | 1995-03-03 | 2001-10-17 | STMicroelectronics S.r.l. | Elektrisch programmierbare und löschbare nichtflüchtige Speicherzelle und FLASH- und EEPROM-Typ-Speicheranordnungen |
US6965142B2 (en) * | 1995-03-07 | 2005-11-15 | Impinj, Inc. | Floating-gate semiconductor structures |
US5687118A (en) * | 1995-11-14 | 1997-11-11 | Programmable Microelectronics Corporation | PMOS memory cell with hot electron injection programming and tunnelling erasing |
US5666307A (en) * | 1995-11-14 | 1997-09-09 | Programmable Microelectronics Corporation | PMOS flash memory cell capable of multi-level threshold voltage storage |
US5706227A (en) * | 1995-12-07 | 1998-01-06 | Programmable Microelectronics Corporation | Double poly split gate PMOS flash memory cell |
US6060360A (en) * | 1997-04-14 | 2000-05-09 | Taiwan Semiconductor Manufacturing Company | Method of manufacture of P-channel EEprom and flash EEprom devices |
US5933732A (en) | 1997-05-07 | 1999-08-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nonvolatile devices with P-channel EEPROM devices as injector |
US6965123B1 (en) | 1997-07-29 | 2005-11-15 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
US6936849B1 (en) | 1997-07-29 | 2005-08-30 | Micron Technology, Inc. | Silicon carbide gate transistor |
US6031263A (en) * | 1997-07-29 | 2000-02-29 | Micron Technology, Inc. | DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate |
US7196929B1 (en) | 1997-07-29 | 2007-03-27 | Micron Technology Inc | Method for operating a memory device having an amorphous silicon carbide gate insulator |
US6794255B1 (en) | 1997-07-29 | 2004-09-21 | Micron Technology, Inc. | Carburized silicon gate insulators for integrated circuits |
US7154153B1 (en) * | 1997-07-29 | 2006-12-26 | Micron Technology, Inc. | Memory device |
US6746893B1 (en) | 1997-07-29 | 2004-06-08 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
US6509603B2 (en) | 2000-03-13 | 2003-01-21 | Taiwan Semiconductor Manufacturing Company | P-channel EEPROM and flash EEPROM devices |
US6664909B1 (en) | 2001-08-13 | 2003-12-16 | Impinj, Inc. | Method and apparatus for trimming high-resolution digital-to-analog converter |
DE10201303A1 (de) * | 2002-01-15 | 2003-07-31 | Infineon Technologies Ag | Nichtflüchtige Zweitransistor-Halbleiterspeicherzelle sowie zugehöriges Herstellungsverfahren |
US7180125B2 (en) * | 2004-08-16 | 2007-02-20 | Chih-Hsin Wang | P-channel electrically alterable non-volatile memory cell |
US7626864B2 (en) * | 2006-04-26 | 2009-12-01 | Chih-Hsin Wang | Electrically alterable non-volatile memory cells and arrays |
KR102597521B1 (ko) * | 2023-03-28 | 2023-11-03 | 주식회사 이에스지케미칼 | 자외선 안정도를 향상시킨 탄산칼슘을 포함하는 친환경 바이오매스 tpu재질의 그레이팅 덮개 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
GB1517925A (en) * | 1974-09-20 | 1978-07-19 | Siemens Ag | Storage field effect transistors |
US4016588A (en) * | 1974-12-27 | 1977-04-05 | Nippon Electric Company, Ltd. | Non-volatile semiconductor memory device |
JPS5228229A (en) * | 1975-08-28 | 1977-03-03 | Mitsubishi Electric Corp | Semiconductor memory |
JPS5427778A (en) * | 1977-08-04 | 1979-03-02 | Seiko Instr & Electronics Ltd | Non-volatile semiconductor memory device |
US4162504A (en) * | 1977-12-27 | 1979-07-24 | Rca Corp. | Floating gate solid-state storage device |
CH631287A5 (fr) * | 1979-03-14 | 1982-07-30 | Centre Electron Horloger | Element de memoire non-volatile, electriquement reprogrammable. |
US4608585A (en) * | 1982-07-30 | 1986-08-26 | Signetics Corporation | Electrically erasable PROM cell |
EP0103043B1 (de) * | 1982-09-15 | 1987-03-18 | Deutsche ITT Industries GmbH | CMOS-Speicherzelle mit potentialmässig schwebendem Speichergate |
JPS6197976A (ja) * | 1984-10-19 | 1986-05-16 | Hitachi Ltd | 半導体集積回路装置 |
-
1986
- 1986-07-10 IT IT83630/86A patent/IT1201834B/it active
-
1987
- 1987-06-22 EP EP87830234A patent/EP0255489B1/de not_active Expired - Lifetime
- 1987-06-22 DE DE8787830234T patent/DE3785509T2/de not_active Expired - Fee Related
- 1987-06-22 US US07/064,480 patent/US4816883A/en not_active Expired - Lifetime
- 1987-07-10 JP JP62171373A patent/JPS6329980A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE3785509T2 (de) | 1993-07-29 |
IT1201834B (it) | 1989-02-02 |
IT8683630A0 (it) | 1986-07-10 |
US4816883A (en) | 1989-03-28 |
JPS6329980A (ja) | 1988-02-08 |
EP0255489A3 (en) | 1988-07-06 |
EP0255489A2 (de) | 1988-02-03 |
EP0255489B1 (de) | 1993-04-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |