DE3752221D1 - Photoelektrischer Wandler - Google Patents

Photoelektrischer Wandler

Info

Publication number
DE3752221D1
DE3752221D1 DE3752221T DE3752221T DE3752221D1 DE 3752221 D1 DE3752221 D1 DE 3752221D1 DE 3752221 T DE3752221 T DE 3752221T DE 3752221 T DE3752221 T DE 3752221T DE 3752221 D1 DE3752221 D1 DE 3752221D1
Authority
DE
Germany
Prior art keywords
electrode region
conductivity type
main electrode
accumulation
setting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3752221T
Other languages
English (en)
Other versions
DE3752221T2 (de
Inventor
Nobuyoshi Tanaka
Yoshio Nakamura
Shigetoshi Sugawa
Hayao Ohzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3752221D1 publication Critical patent/DE3752221D1/de
Application granted granted Critical
Publication of DE3752221T2 publication Critical patent/DE3752221T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/1581—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation using linear image-sensor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/1506—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements
    • H04N3/1512—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements for MOS image-sensors, e.g. MOS-CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Amplifiers (AREA)
  • Optical Head (AREA)
  • Glass Compositions (AREA)
  • Facsimile Heads (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE3752221T 1986-07-17 1987-07-17 Photoelektrischer Wandler Expired - Fee Related DE3752221T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61168286A JPH0644619B2 (ja) 1986-07-17 1986-07-17 光電変換装置

Publications (2)

Publication Number Publication Date
DE3752221D1 true DE3752221D1 (de) 1998-11-12
DE3752221T2 DE3752221T2 (de) 1999-03-25

Family

ID=15865204

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3752221T Expired - Fee Related DE3752221T2 (de) 1986-07-17 1987-07-17 Photoelektrischer Wandler

Country Status (7)

Country Link
US (1) US4810896A (de)
EP (1) EP0253678B1 (de)
JP (1) JPH0644619B2 (de)
AT (1) ATE172056T1 (de)
CA (1) CA1278079C (de)
DE (1) DE3752221T2 (de)
ES (1) ES2120941T3 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4866293A (en) * 1986-12-09 1989-09-12 Canon Kabushiki Kaisha Photoelectric converting apparatus to prevent the outflow of excess carriers
JPS63206069A (ja) * 1987-02-23 1988-08-25 Fuji Photo Film Co Ltd イメ−ジ・センサ
US4942474A (en) * 1987-12-11 1990-07-17 Hitachi, Ltd. Solid-state imaging device having photo-electric conversion elements and other circuit elements arranged to provide improved photo-sensitivity
JP2990435B2 (ja) * 1988-02-02 1999-12-13 セイコーインスツルメンツ株式会社 イメージセンサー
US5262850A (en) * 1988-09-20 1993-11-16 Canon Kabushiki Kaisha Photoelectric converting device having reduced line sensor space
US5262870A (en) * 1989-02-10 1993-11-16 Canon Kabushiki Kaisha Image sensor in which reading and resetting are simultaneously performed
EP0382568B1 (de) * 1989-02-10 1994-06-15 Canon Kabushiki Kaisha Bildsensor und photoelektrisches Umwandlungsgerät zur Anwendung desselben
US5272345A (en) * 1989-09-22 1993-12-21 Ada Technologies, Inc. Calibration method and apparatus for measuring the concentration of components in a fluid
JP2810526B2 (ja) * 1989-11-21 1998-10-15 キヤノン株式会社 光電変換装置及び該装置を搭載した装置
US5241169A (en) * 1989-11-21 1993-08-31 Canon Kabushiki Kaisha Photoelectric conversion device having an improved control electrode structure and apparatus equipped with same
US5260560A (en) * 1990-03-02 1993-11-09 Canon Kabushiki Kaisha Photoelectric transfer device
US5184006A (en) * 1990-04-23 1993-02-02 Canon Kabushiki Kaisha Photoelectric conversion apparatus having clock signals of different frequencies
DE69133418T2 (de) * 1990-08-07 2005-08-18 Canon K.K. Photoumwandlerschaltung
US5288988A (en) * 1990-08-07 1994-02-22 Canon Kabushiki Kaisha Photoconversion device having reset control circuitry
JPH04100383A (ja) * 1990-08-18 1992-04-02 Seiko Instr Inc 固体撮像素子
JP3050583B2 (ja) * 1990-10-17 2000-06-12 ソニー株式会社 固体撮像装置
US5262873A (en) 1990-11-07 1993-11-16 Canon Kabushiki Kaisha Image signal correcting in image data processing requiring only small memory capacity
US5281803A (en) * 1990-11-26 1994-01-25 Canon Kabushiki Kaisha Image sensor and information processing apparatus
CA2056087C (en) * 1990-11-27 1998-01-27 Masakazu Morishita Photoelectric converting device and information processing apparatus employing the same
JP2662105B2 (ja) * 1991-04-08 1997-10-08 キヤノン株式会社 密着型センサおよびイメージスキャナならびにファクシミリ
JP2768453B2 (ja) 1992-03-03 1998-06-25 キヤノン株式会社 固体撮像装置及びそれを用いた装置
US5406332A (en) * 1992-03-06 1995-04-11 Canon Kabushiki Kaisha Photoelectric converting device
JPH05335615A (ja) * 1992-05-27 1993-12-17 Canon Inc 光電変換装置
DE69324406T2 (de) * 1992-06-11 1999-11-11 Canon K.K., Tokio/Tokyo Kontaktbildsensor, Verfahren zur dessen Herstellung und Informationsverarbeitungsgerät
US5453611A (en) * 1993-01-01 1995-09-26 Canon Kabushiki Kaisha Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip
EP0616464B1 (de) * 1993-03-15 1999-06-02 Canon Kabushiki Kaisha Signalprozessor
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
TW421962B (en) 1997-09-29 2001-02-11 Canon Kk Image sensing device using mos type image sensing elements
JP3467013B2 (ja) 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
WO2002027763A2 (en) 2000-09-25 2002-04-04 Foveon, Inc. Active pixel sensor with noise cancellation
US6950131B1 (en) 2000-09-26 2005-09-27 Valley Oak Semiconductor Simultaneous access and reset system for an active pixel sensor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528456B2 (de) * 1972-11-08 1980-07-28
JPS55105480A (en) * 1979-02-07 1980-08-13 Hitachi Ltd Solid state pickup device
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
US4445117A (en) * 1981-12-28 1984-04-24 Hughes Aircraft Company Transistorized focal plane having floating gate output nodes
JPS59107569A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 一次元半導体撮像装置
JPH0744661B2 (ja) * 1982-12-14 1995-05-15 オリンパス光学工業株式会社 固体撮像装置
JPS59108476A (ja) * 1982-12-14 1984-06-22 Junichi Nishizawa ２次元固体撮像装置及びその読出し方法
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JPS61157184A (ja) * 1984-12-28 1986-07-16 Canon Inc 光電変換装置

Also Published As

Publication number Publication date
JPH0644619B2 (ja) 1994-06-08
CA1278079C (en) 1990-12-18
ATE172056T1 (de) 1998-10-15
EP0253678B1 (de) 1998-10-07
US4810896A (en) 1989-03-07
ES2120941T3 (es) 1998-11-16
DE3752221T2 (de) 1999-03-25
EP0253678A2 (de) 1988-01-20
EP0253678A3 (de) 1988-06-01
JPS6324664A (ja) 1988-02-02

Similar Documents

Publication Publication Date Title
ATE172056T1 (de) Photoelektrischer wandler
DE3584203D1 (de) Hochfrequenzleistungsverstaerker mit bipolaren transistoren.
DE3786363D1 (de) Halbleiteranordnungen mit hoher beweglichkeit.
GB2029096B (en) Semiconductor devices
SE8003729L (sv) Vmos/bipoler effektomkopplingsanordning
DE3784191D1 (de) Halbleiterphotodetektor mit schottky-uebergang.
DE3582457D1 (de) Halbleitervorrichtung mit eingangs-/ausgangsschutzschaltung.
EP0274236A3 (de) Photoelektrischer Wandler
ATE77184T1 (de) Integrierte geschaltete uebertragungsschaltung.
DE3581045D1 (de) "latch-up"-freie komplementaere halbleiteranordnung mit hoher schaltgeschwindigkeit.
JPS52131449A (en) Semiconductor switch circuit
DE3583113D1 (de) Integrierte halbleiterschaltungsanordnung in polycell-technik.
DE3581159D1 (de) Halbleiteranordnung mit integrierter schaltung.
KR860005442A (ko) 신호입력부를 갖는 반도체장치
DE3850445D1 (de) Integrierter Halbleiterschaltkreis mit reduziertem Energieverbrauch.
JPS52155984A (en) Charge transfer device
JPS5286049A (en) Semiconductor switch
NL193599B (nl) Direct gekoppelde halfgeleiderschakeling.
DE3581842D1 (de) Integrierte halbleiterschaltung mit komplementaeren feldeffekttransistoren.
JPS5648720A (en) Inductive load driving circuit
JPS52133761A (en) Integrated circuit
JPS55136724A (en) Logic circuit device
JPS5736854A (en) Integrated circuit device
CS180417B1 (en) Limit collector voltage transistor maximum utilization circuit for inductive loads switching
JPS5397357A (en) Driving circuit by transistor

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee