DE3688318T2 - Feldeffekttransistor. - Google Patents
Feldeffekttransistor.Info
- Publication number
- DE3688318T2 DE3688318T2 DE8686117164T DE3688318T DE3688318T2 DE 3688318 T2 DE3688318 T2 DE 3688318T2 DE 8686117164 T DE8686117164 T DE 8686117164T DE 3688318 T DE3688318 T DE 3688318T DE 3688318 T2 DE3688318 T2 DE 3688318T2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- transistor
- field
- effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60286747A JPS62145779A (ja) | 1985-12-19 | 1985-12-19 | 電界効果トランジスタ |
JP61017571A JPS62174976A (ja) | 1986-01-28 | 1986-01-28 | 電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3688318D1 DE3688318D1 (de) | 1993-05-27 |
DE3688318T2 true DE3688318T2 (de) | 1993-07-29 |
Family
ID=26354120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686117164T Expired - Fee Related DE3688318T2 (de) | 1985-12-19 | 1986-12-09 | Feldeffekttransistor. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4764796A (de) |
EP (1) | EP0228624B1 (de) |
KR (1) | KR900000073B1 (de) |
CA (1) | CA1247755A (de) |
DE (1) | DE3688318T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63276267A (ja) * | 1987-05-08 | 1988-11-14 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2630445B2 (ja) * | 1988-10-08 | 1997-07-16 | 富士通株式会社 | 半導体装置 |
JP2873583B2 (ja) * | 1989-05-10 | 1999-03-24 | 富士通株式会社 | 高速半導体装置 |
JP2919581B2 (ja) * | 1990-08-31 | 1999-07-12 | 三洋電機株式会社 | 速度変調トランジスタ |
JP2786327B2 (ja) * | 1990-10-25 | 1998-08-13 | 三菱電機株式会社 | ヘテロ接合電界効果トランジスタ |
DE69117866T2 (de) * | 1990-10-26 | 1996-10-10 | Nippon Telegraph & Telephone | Heteroübergangsfeldeffekttransistor |
JPH04184973A (ja) * | 1990-11-19 | 1992-07-01 | Mitsubishi Electric Corp | 長波長光送信oeic |
JP2914049B2 (ja) * | 1992-10-27 | 1999-06-28 | 株式会社デンソー | ヘテロ接合を有する化合物半導体基板およびそれを用いた電界効果トランジスタ |
JP4186032B2 (ja) * | 2000-06-29 | 2008-11-26 | 日本電気株式会社 | 半導体装置 |
US20050116290A1 (en) * | 2003-12-02 | 2005-06-02 | De Souza Joel P. | Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layers |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54124991A (en) * | 1978-03-23 | 1979-09-28 | Fujitsu Ltd | Semiconductor luminous unit |
JPS58196057A (ja) * | 1982-05-11 | 1983-11-15 | Fujitsu Ltd | 半導体装置 |
JPS593920A (ja) * | 1982-06-29 | 1984-01-10 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS59100576A (ja) * | 1982-11-30 | 1984-06-09 | Fujitsu Ltd | 半導体装置 |
JPS60140874A (ja) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | 半導体装置 |
-
1986
- 1986-12-09 US US06/939,716 patent/US4764796A/en not_active Expired - Lifetime
- 1986-12-09 EP EP86117164A patent/EP0228624B1/de not_active Expired - Lifetime
- 1986-12-09 DE DE8686117164T patent/DE3688318T2/de not_active Expired - Fee Related
- 1986-12-17 KR KR1019860010809A patent/KR900000073B1/ko not_active IP Right Cessation
- 1986-12-17 CA CA000525579A patent/CA1247755A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
KR900000073B1 (ko) | 1990-01-19 |
EP0228624A2 (de) | 1987-07-15 |
EP0228624A3 (en) | 1989-10-18 |
EP0228624B1 (de) | 1993-04-21 |
CA1247755A (en) | 1988-12-28 |
KR870006679A (ko) | 1987-07-13 |
US4764796A (en) | 1988-08-16 |
DE3688318D1 (de) | 1993-05-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |