JPS54124991A - Semiconductor luminous unit - Google Patents
Semiconductor luminous unitInfo
- Publication number
- JPS54124991A JPS54124991A JP3340078A JP3340078A JPS54124991A JP S54124991 A JPS54124991 A JP S54124991A JP 3340078 A JP3340078 A JP 3340078A JP 3340078 A JP3340078 A JP 3340078A JP S54124991 A JPS54124991 A JP S54124991A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- striped
- type
- type inp
- grooves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To reduce a series resistance value of an ohmic contact resistance, by forming a striped structure even by using InP for the material of a luminous unit.
CONSTITUTION: On n-type InP substrate 1, n-type InP clad layer 2, In1-xGaxAs1-yPy active layer 3, p-type InP clad layer 4, and n-type InP clad layer 5 are stacked. Striped grooves 6 and provided and made to reach layer 4 sufficiently by photoetching. Next, p-type striped layer is formed filling grooves to flatten the surface, p-type In1-xGaxAs1-yPy layer 8 is stacked, and electrodes 9 and 10 are provided. In this method, the extremely-simplified formation of the striped structure can be realized only by selecting striped grooves for the clad layers. The value of the series resistance of an ohmic contact resistance is low since cap layer 8 covers the entire surface of the unit touching metal electrodes in spite of the striped structure.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3340078A JPS54124991A (en) | 1978-03-23 | 1978-03-23 | Semiconductor luminous unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3340078A JPS54124991A (en) | 1978-03-23 | 1978-03-23 | Semiconductor luminous unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54124991A true JPS54124991A (en) | 1979-09-28 |
Family
ID=12385537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3340078A Pending JPS54124991A (en) | 1978-03-23 | 1978-03-23 | Semiconductor luminous unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54124991A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4481523A (en) * | 1980-12-02 | 1984-11-06 | Fujitsu Limited | Avalanche photodiodes |
US4764796A (en) * | 1985-12-19 | 1988-08-16 | Sumitomo Electric Industries, Ltd. | Heterojunction field effect transistor with two-dimensional electron layer |
-
1978
- 1978-03-23 JP JP3340078A patent/JPS54124991A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4481523A (en) * | 1980-12-02 | 1984-11-06 | Fujitsu Limited | Avalanche photodiodes |
US4764796A (en) * | 1985-12-19 | 1988-08-16 | Sumitomo Electric Industries, Ltd. | Heterojunction field effect transistor with two-dimensional electron layer |
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