DE3682954D1 - Zerstaeubungsvorrichtung. - Google Patents

Zerstaeubungsvorrichtung.

Info

Publication number
DE3682954D1
DE3682954D1 DE8686106446T DE3682954T DE3682954D1 DE 3682954 D1 DE3682954 D1 DE 3682954D1 DE 8686106446 T DE8686106446 T DE 8686106446T DE 3682954 T DE3682954 T DE 3682954T DE 3682954 D1 DE3682954 D1 DE 3682954D1
Authority
DE
Germany
Prior art keywords
spraying device
spraying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686106446T
Other languages
English (en)
Inventor
Jerome John Cuomo
Harold Richard Kaufman
Stephen Mark Rossnagel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3682954D1 publication Critical patent/DE3682954D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
DE8686106446T 1985-05-22 1986-05-13 Zerstaeubungsvorrichtung. Expired - Fee Related DE3682954D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/736,918 US4588490A (en) 1985-05-22 1985-05-22 Hollow cathode enhanced magnetron sputter device

Publications (1)

Publication Number Publication Date
DE3682954D1 true DE3682954D1 (de) 1992-01-30

Family

ID=24961865

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686106446T Expired - Fee Related DE3682954D1 (de) 1985-05-22 1986-05-13 Zerstaeubungsvorrichtung.

Country Status (4)

Country Link
US (1) US4588490A (de)
EP (1) EP0205874B1 (de)
JP (1) JPS61266585A (de)
DE (1) DE3682954D1 (de)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
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US4716340A (en) * 1985-12-10 1987-12-29 Denton Vacuum Inc Pre-ionization aided sputter gun
JPS63126556A (ja) * 1986-11-17 1988-05-30 Nippon Shokubai Kagaku Kogyo Co Ltd アルカノ−ルアミン類の気相分子内脱水反応用触媒
JPS63126557A (ja) * 1986-11-17 1988-05-30 Nippon Shokubai Kagaku Kogyo Co Ltd アルカノ−ルアミン類の気相分子内脱水反応用触媒
JPS63126558A (ja) * 1986-11-17 1988-05-30 Nippon Shokubai Kagaku Kogyo Co Ltd アルカノ−ルアミン類の気相分子内脱水反応用触媒
DE4017111C2 (de) * 1990-05-28 1998-01-29 Hauzer Holding Lichtbogen-Magnetron-Vorrichtung
KR920002864B1 (ko) * 1987-07-20 1992-04-06 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리방법 및 그 장치
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
US4824544A (en) * 1987-10-29 1989-04-25 International Business Machines Corporation Large area cathode lift-off sputter deposition device
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
US5225057A (en) * 1988-02-08 1993-07-06 Optical Coating Laboratory, Inc. Process for depositing optical films on both planar and non-planar substrates
US5798027A (en) * 1988-02-08 1998-08-25 Optical Coating Laboratory, Inc. Process for depositing optical thin films on both planar and non-planar substrates
DE3837487A1 (de) * 1988-11-04 1990-05-10 Leybold Ag Verfahren und vorrichtung zum aetzen von substraten mit einer magnetfeldunterstuetzten niederdruck-entladung
US4915805A (en) * 1988-11-21 1990-04-10 At&T Bell Laboratories Hollow cathode type magnetron apparatus construction
US4985657A (en) * 1989-04-11 1991-01-15 Lk Technologies, Inc. High flux ion gun apparatus and method for enhancing ion flux therefrom
US5234560A (en) * 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
JPH0544969A (ja) * 1990-07-17 1993-02-23 Awaa Bureen Kankyo Sekkei Kk 室内換気システム
US5089442A (en) * 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
JPH04280968A (ja) * 1990-10-22 1992-10-06 Varian Assoc Inc 高真空マグネトロンスパッタ装置
EP0581902A4 (de) * 1991-04-19 1994-03-23 Surface Solutions Inc Verfahren und vorrichtung zur linearen magnetronzerstäubung.
US5482611A (en) * 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
JPH05126385A (ja) * 1991-11-08 1993-05-21 Matsushita Seiko Co Ltd 防カビ装置
US5490910A (en) * 1992-03-09 1996-02-13 Tulip Memory Systems, Inc. Circularly symmetric sputtering apparatus with hollow-cathode plasma devices
US5457298A (en) * 1993-07-27 1995-10-10 Tulip Memory Systems, Inc. Coldwall hollow-cathode plasma device for support of gas discharges
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US5527438A (en) * 1994-12-16 1996-06-18 Applied Materials, Inc. Cylindrical sputtering shield
US5702573A (en) * 1996-01-29 1997-12-30 Varian Associates, Inc. Method and apparatus for improved low pressure collimated magnetron sputter deposition of metal films
US5733418A (en) * 1996-05-07 1998-03-31 Pld Advanced Automation Systems, Inc. Sputtering method and apparatus
US6599399B2 (en) 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
US5855745A (en) * 1997-04-23 1999-01-05 Sierra Applied Sciences, Inc. Plasma processing system utilizing combined anode/ ion source
SE511139C2 (sv) * 1997-11-20 1999-08-09 Hana Barankova Plasmabearbetningsapparat med vridbara magneter
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
DE19854573A1 (de) 1998-11-26 2000-05-31 Basf Ag Verfahren zur Nachvernetzung von Hydrogelen mit 2-Oxo-tetrahydro-1,3-oxazinen
JP4351755B2 (ja) * 1999-03-12 2009-10-28 キヤノンアネルバ株式会社 薄膜作成方法および薄膜作成装置
US6444100B1 (en) 2000-02-11 2002-09-03 Seagate Technology Llc Hollow cathode sputter source
WO2002043466A2 (en) * 2000-11-30 2002-06-06 North Carolina State University Non-thermionic sputter material transport device, methods of use, and materials produced thereby
US6784085B2 (en) 2000-11-30 2004-08-31 North Carolina State University MIIIN based materials and methods and apparatus for producing same
US6554914B1 (en) * 2001-02-02 2003-04-29 Novellus Systems, Inc. Passivation of copper in dual damascene metalization
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
US8043484B1 (en) 2001-03-13 2011-10-25 Novellus Systems, Inc. Methods and apparatus for resputtering process that improves barrier coverage
US7781327B1 (en) 2001-03-13 2010-08-24 Novellus Systems, Inc. Resputtering process for eliminating dielectric damage
US7931787B2 (en) * 2002-02-26 2011-04-26 Donald Bennett Hilliard Electron-assisted deposition process and apparatus
DE10225943A1 (de) 2002-06-11 2004-01-08 Basf Ag Verfahren zur Herstellung von Estern von Polyalkoholen
US6830664B2 (en) * 2002-08-05 2004-12-14 Tegal Corporation Cluster tool with a hollow cathode array
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US6896775B2 (en) * 2002-10-29 2005-05-24 Zond, Inc. High-power pulsed magnetically enhanced plasma processing
US6853142B2 (en) * 2002-11-04 2005-02-08 Zond, Inc. Methods and apparatus for generating high-density plasma
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
US8298933B2 (en) 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US7663319B2 (en) * 2004-02-22 2010-02-16 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
DE102004015230B4 (de) * 2004-03-29 2007-07-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Intensivieren einer gepulsten Magnetronentladung
US7750575B2 (en) * 2004-04-07 2010-07-06 Zond, Inc. High density plasma source
EP1803142A1 (de) * 2004-09-24 2007-07-04 Zond, Inc. Vorrichtung zum erzeugen von elektrischen hochstrom-entladungen
US20090214787A1 (en) * 2005-10-18 2009-08-27 Southwest Research Institute Erosion Resistant Coatings
WO2007048098A2 (en) * 2005-10-18 2007-04-26 Southwest Research Institute Erosion resistant coatings
US7855147B1 (en) 2006-06-22 2010-12-21 Novellus Systems, Inc. Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US7645696B1 (en) 2006-06-22 2010-01-12 Novellus Systems, Inc. Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer
US7510634B1 (en) 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
US7682966B1 (en) 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US7897516B1 (en) 2007-05-24 2011-03-01 Novellus Systems, Inc. Use of ultra-high magnetic fields in resputter and plasma etching
US7922880B1 (en) 2007-05-24 2011-04-12 Novellus Systems, Inc. Method and apparatus for increasing local plasma density in magnetically confined plasma
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
US8017523B1 (en) 2008-05-16 2011-09-13 Novellus Systems, Inc. Deposition of doped copper seed layers having improved reliability
US20120164353A1 (en) * 2009-09-05 2012-06-28 John Madocks Plasma enhanced chemical vapor deposition apparatus
US8790791B2 (en) 2010-04-15 2014-07-29 Southwest Research Institute Oxidation resistant nanocrystalline MCrAl(Y) coatings and methods of forming such coatings
US9144455B2 (en) 2010-06-07 2015-09-29 Just Right Surgical, Llc Low power tissue sealing device and method
DE102010050311A1 (de) 2010-11-03 2012-05-03 Bsn Medical Gmbh Wundauflage mit einer Biocelluloseschicht, die Bakterien adsorbierend ausgerüstet ist
US9511572B2 (en) 2011-05-25 2016-12-06 Southwest Research Institute Nanocrystalline interlayer coating for increasing service life of thermal barrier coating on high temperature components
US10304665B2 (en) 2011-09-07 2019-05-28 Nano-Product Engineering, LLC Reactors for plasma-assisted processes and associated methods
US9761424B1 (en) 2011-09-07 2017-09-12 Nano-Product Engineering, LLC Filtered cathodic arc method, apparatus and applications thereof
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9412569B2 (en) 2012-09-14 2016-08-09 Vapor Technologies, Inc. Remote arc discharge plasma assisted processes
US9793098B2 (en) 2012-09-14 2017-10-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
US9508532B2 (en) 2013-03-13 2016-11-29 Bb Plasma Design Ab Magnetron plasma apparatus
US9736920B2 (en) 2015-02-06 2017-08-15 Mks Instruments, Inc. Apparatus and method for plasma ignition with a self-resonating device
US9523146B1 (en) 2015-06-17 2016-12-20 Southwest Research Institute Ti—Si—C—N piston ring coatings
US11823859B2 (en) 2016-09-09 2023-11-21 Ionquest Corp. Sputtering a layer on a substrate using a high-energy density plasma magnetron
US10227691B2 (en) 2015-12-21 2019-03-12 IonQuest LLC Magnetically enhanced low temperature-high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond like films
US11359274B2 (en) 2015-12-21 2022-06-14 IonQuestCorp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US10957519B2 (en) 2015-12-21 2021-03-23 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US11482404B2 (en) 2015-12-21 2022-10-25 Ionquest Corp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US9980361B2 (en) * 2016-06-16 2018-05-22 The United States Of America, As Represented By The Secretary Of The Navy Thermally isolated thermionic hollow cathodes
US20200176234A1 (en) * 2017-04-07 2020-06-04 Ionquest Corp. High-power resonance pulse ac hedp sputtering source and method for material processing
US11834204B1 (en) 2018-04-05 2023-12-05 Nano-Product Engineering, LLC Sources for plasma assisted electric propulsion

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
US4155825A (en) * 1977-05-02 1979-05-22 Fournier Paul R Integrated sputtering apparatus and method
GB2096177B (en) * 1981-04-07 1985-07-17 Fournier Paul R Improved integrated sputtering apparatus and method
JPS5816078A (ja) * 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
US4407712A (en) * 1982-06-01 1983-10-04 The United States Of America As Represented By The Secretary Of The Army Hollow cathode discharge source of metal vapor
US4521286A (en) * 1983-03-09 1985-06-04 Unisearch Limited Hollow cathode sputter etcher
JPS61238958A (ja) * 1985-04-15 1986-10-24 Hitachi Ltd 複合薄膜形成法及び装置

Also Published As

Publication number Publication date
EP0205874B1 (de) 1991-12-18
JPS6363635B2 (de) 1988-12-08
JPS61266585A (ja) 1986-11-26
US4588490A (en) 1986-05-13
EP0205874A2 (de) 1986-12-30
EP0205874A3 (en) 1989-04-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee