DE3675811D1 - Elektrodenstruktur fuer halbleiteranordnung und verfahren zu ihrer herstellung. - Google Patents

Elektrodenstruktur fuer halbleiteranordnung und verfahren zu ihrer herstellung.

Info

Publication number
DE3675811D1
DE3675811D1 DE8686200755T DE3675811T DE3675811D1 DE 3675811 D1 DE3675811 D1 DE 3675811D1 DE 8686200755 T DE8686200755 T DE 8686200755T DE 3675811 T DE3675811 T DE 3675811T DE 3675811 D1 DE3675811 D1 DE 3675811D1
Authority
DE
Germany
Prior art keywords
production
electrode structure
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686200755T
Other languages
English (en)
Inventor
Geert Jan Thomas Davids
Arendonk Anton Maria Petru Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3675811D1 publication Critical patent/DE3675811D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66946—Charge transfer devices
    • H01L29/66954—Charge transfer devices with an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE8686200755T 1985-05-10 1986-05-02 Elektrodenstruktur fuer halbleiteranordnung und verfahren zu ihrer herstellung. Expired - Lifetime DE3675811D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8501339A NL8501339A (nl) 1985-05-10 1985-05-10 Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.

Publications (1)

Publication Number Publication Date
DE3675811D1 true DE3675811D1 (de) 1991-01-10

Family

ID=19845961

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686200755T Expired - Lifetime DE3675811D1 (de) 1985-05-10 1986-05-02 Elektrodenstruktur fuer halbleiteranordnung und verfahren zu ihrer herstellung.

Country Status (6)

Country Link
US (2) US4754311A (de)
EP (1) EP0202704B1 (de)
JP (1) JPS61260656A (de)
CA (1) CA1243132A (de)
DE (1) DE3675811D1 (de)
NL (1) NL8501339A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63202067A (ja) * 1987-02-17 1988-08-22 Mitsubishi Electric Corp 半導体装置の製造方法
US5194751A (en) * 1989-07-17 1993-03-16 Sony Corporation Structure of solid-state image sensing devices
US5017515A (en) * 1989-10-02 1991-05-21 Texas Instruments Incorporated Process for minimizing lateral distance between elements in an integrated circuit by using sidewall spacers
JP2971085B2 (ja) * 1990-02-13 1999-11-02 沖電気工業株式会社 半導体装置の製造方法
KR920010433B1 (ko) * 1990-07-10 1992-11-27 금성일렉트론 주식회사 자기정렬 방식에 의한 전하 촬상소자의 제조방법
NL9100094A (nl) * 1991-01-21 1992-08-17 Koninkl Philips Electronics Nv Halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
KR960015271B1 (ko) * 1993-08-18 1996-11-07 엘지반도체 주식회사 전하전송장치의 제조방법
BE1007768A3 (nl) * 1993-11-10 1995-10-17 Philips Electronics Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd met een dergelijke werkwijze.
US5460997A (en) * 1995-01-23 1995-10-24 Eastman Kodak Company Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes
JP3150050B2 (ja) * 1995-03-30 2001-03-26 日本電気株式会社 電荷結合装置およびその製造方法
US5719075A (en) * 1995-07-31 1998-02-17 Eastman Kodak Company Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal
KR100215882B1 (ko) * 1996-05-16 1999-08-16 구본준 고체촬상소자 제조방법
DE69732520T2 (de) * 1996-09-10 2006-02-09 Dalsa Corp., Waterloo Ladungsgekoppelte anordnung und verfahren zur herstellung
US6174824B1 (en) 1999-03-04 2001-01-16 International Business Machines Corporation Post-processing a completed semiconductor device
JP2006013460A (ja) * 2004-05-21 2006-01-12 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法および固体撮像素子

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163239A (en) * 1971-12-30 1979-07-31 Texas Instruments Incorporated Second level phase lines for CCD line imager
JPS532696B2 (de) * 1973-06-18 1978-01-31
US3931674A (en) * 1974-02-08 1976-01-13 Fairchild Camera And Instrument Corporation Self aligned CCD element including two levels of electrodes and method of manufacture therefor
US4053349A (en) * 1976-02-02 1977-10-11 Intel Corporation Method for forming a narrow gap
JPS606108B2 (ja) * 1976-07-07 1985-02-15 株式会社東芝 半導体装置の製造方法
US4097886A (en) * 1976-10-22 1978-06-27 General Electric Company Split electrode structure for semiconductor devices
US4227202A (en) * 1977-10-27 1980-10-07 Texas Instruments Incorporated Dual plane barrier-type two-phase CCD
US4228445A (en) * 1977-10-27 1980-10-14 Texas Instruments Incorporated Dual plane well-type two-phase ccd
US4222165A (en) * 1978-09-25 1980-09-16 Emm Semi, Inc. Two-phase continuous poly silicon gate CCD
US4375652A (en) * 1981-10-22 1983-03-01 International Business Machines Corporation High-speed time delay and integration solid state scanner
JPS5994458A (ja) * 1982-11-19 1984-05-31 Fujitsu Ltd 電荷転送装置
NL8400224A (nl) * 1984-01-25 1985-08-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting en inrichting vervaardigd door toepassing daarvan.
NL8402223A (nl) * 1984-07-13 1986-02-03 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting en inrichting, vervaardigd door toepassing daarvan.
US4658278A (en) * 1985-04-15 1987-04-14 Rca Corporation High density charge-coupled device imager and method of making the same

Also Published As

Publication number Publication date
JPS61260656A (ja) 1986-11-18
US4754311A (en) 1988-06-28
NL8501339A (nl) 1986-12-01
CA1243132A (en) 1988-10-11
EP0202704A1 (de) 1986-11-26
EP0202704B1 (de) 1990-11-28
US4766089A (en) 1988-08-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee