DE3670513D1 - Verfahren zur herstellung eines einkristalls. - Google Patents
Verfahren zur herstellung eines einkristalls.Info
- Publication number
- DE3670513D1 DE3670513D1 DE8686300926T DE3670513T DE3670513D1 DE 3670513 D1 DE3670513 D1 DE 3670513D1 DE 8686300926 T DE8686300926 T DE 8686300926T DE 3670513 T DE3670513 T DE 3670513T DE 3670513 D1 DE3670513 D1 DE 3670513D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- single crystal
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60026742A JPH06102589B2 (ja) | 1985-02-14 | 1985-02-14 | 単結晶の製造方法及び製造装置 |
JP6446785A JPS61222990A (ja) | 1985-03-28 | 1985-03-28 | 化合物半導体単結晶の製造装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3670513D1 true DE3670513D1 (de) | 1990-05-23 |
Family
ID=26364552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686300926T Expired - Lifetime DE3670513D1 (de) | 1985-02-14 | 1986-02-11 | Verfahren zur herstellung eines einkristalls. |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP0194051B1 (de) |
DE (1) | DE3670513D1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2561072B2 (ja) * | 1986-04-30 | 1996-12-04 | 東芝セラミツクス株式会社 | 単結晶の育成方法及びその装置 |
JP2546736B2 (ja) * | 1990-06-21 | 1996-10-23 | 信越半導体株式会社 | シリコン単結晶引上方法 |
JP2767074B2 (ja) * | 1990-07-13 | 1998-06-18 | 信越半導体 株式会社 | シリコン単結晶の引上方法 |
US7291221B2 (en) * | 2004-12-30 | 2007-11-06 | Memc Electronic Materials, Inc. | Electromagnetic pumping of liquid silicon in a crystal growing process |
US7223304B2 (en) | 2004-12-30 | 2007-05-29 | Memc Electronic Materials, Inc. | Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4606037A (en) * | 1983-01-18 | 1986-08-12 | Agency Of Industrial Science & Technology | Apparatus for manufacturing semiconductor single crystal |
-
1986
- 1986-02-11 EP EP19860300926 patent/EP0194051B1/de not_active Expired
- 1986-02-11 DE DE8686300926T patent/DE3670513D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0194051A1 (de) | 1986-09-10 |
EP0194051B1 (de) | 1990-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |