DE3585302D1 - Halbleiterschalteranordnung mit einer vergrabenen gate-struktur. - Google Patents
Halbleiterschalteranordnung mit einer vergrabenen gate-struktur.Info
- Publication number
- DE3585302D1 DE3585302D1 DE8585105410T DE3585302T DE3585302D1 DE 3585302 D1 DE3585302 D1 DE 3585302D1 DE 8585105410 T DE8585105410 T DE 8585105410T DE 3585302 T DE3585302 T DE 3585302T DE 3585302 D1 DE3585302 D1 DE 3585302D1
- Authority
- DE
- Germany
- Prior art keywords
- burned
- gate structure
- semiconductor switch
- switch arrangement
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59109164A JPS60253269A (ja) | 1984-05-29 | 1984-05-29 | ゲ−トタ−ンオフサイリスタ |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3585302D1 true DE3585302D1 (de) | 1992-03-12 |
Family
ID=14503270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585105410T Expired - Fee Related DE3585302D1 (de) | 1984-05-29 | 1985-05-03 | Halbleiterschalteranordnung mit einer vergrabenen gate-struktur. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4651188A (de) |
EP (1) | EP0165419B1 (de) |
JP (1) | JPS60253269A (de) |
KR (1) | KR930009809B1 (de) |
DE (1) | DE3585302D1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0535293A1 (de) * | 1991-01-29 | 1993-04-07 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Verfahren zur Herstellung einer zusammengesetzten Halbleitervorrichtung |
US6383871B1 (en) * | 1999-08-31 | 2002-05-07 | Micron Technology, Inc. | Method of forming multiple oxide thicknesses for merged memory and logic applications |
US6245615B1 (en) | 1999-08-31 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction |
DE102004040524B4 (de) * | 2004-08-20 | 2006-06-29 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Thyristor mit gleichmäßigem Zündverhalten |
WO2008063704A2 (en) | 2006-05-03 | 2008-05-29 | Rochester Institute Of Technology | Nanostructured quantum dots or dashes in photovoltaic devices and methods thereof |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4813572B1 (de) * | 1969-12-01 | 1973-04-27 | ||
NL171309C (nl) * | 1970-03-02 | 1983-03-01 | Hitachi Ltd | Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium. |
DE2422748C3 (de) * | 1974-05-10 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
FR2299727A1 (fr) * | 1975-01-28 | 1976-08-27 | Alsthom Cgee | Thyristor a caracteristiques de commutation ameliorees |
JPS5598871A (en) * | 1979-01-22 | 1980-07-28 | Semiconductor Res Found | Static induction transistor |
US4268848A (en) * | 1979-05-07 | 1981-05-19 | Motorola, Inc. | Preferred device orientation on integrated circuits for better matching under mechanical stress |
JPS56104474A (en) * | 1980-01-23 | 1981-08-20 | Semiconductor Res Found | Silicon semiconductor device |
JPS5835973A (ja) * | 1981-08-28 | 1983-03-02 | Meidensha Electric Mfg Co Ltd | 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ |
JPS5927571A (ja) * | 1982-08-05 | 1984-02-14 | Meidensha Electric Mfg Co Ltd | ゲ−トタ−ンオフサイリスタ |
JPS59109163A (ja) * | 1982-12-16 | 1984-06-23 | Iseki & Co Ltd | 果実の除袋装置 |
-
1984
- 1984-05-29 JP JP59109164A patent/JPS60253269A/ja active Granted
-
1985
- 1985-05-03 DE DE8585105410T patent/DE3585302D1/de not_active Expired - Fee Related
- 1985-05-03 EP EP85105410A patent/EP0165419B1/de not_active Expired - Lifetime
- 1985-05-03 US US06/730,118 patent/US4651188A/en not_active Expired - Fee Related
- 1985-05-28 KR KR8503669A patent/KR930009809B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR930009809B1 (en) | 1993-10-11 |
JPS60253269A (ja) | 1985-12-13 |
EP0165419A3 (en) | 1988-01-20 |
US4651188A (en) | 1987-03-17 |
KR850008761A (ko) | 1985-12-21 |
JPH0543192B2 (de) | 1993-06-30 |
EP0165419A2 (de) | 1985-12-27 |
EP0165419B1 (de) | 1992-01-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |