DE3579333D1 - Spannungsdetektor. - Google Patents

Spannungsdetektor.

Info

Publication number
DE3579333D1
DE3579333D1 DE8585301327T DE3579333T DE3579333D1 DE 3579333 D1 DE3579333 D1 DE 3579333D1 DE 8585301327 T DE8585301327 T DE 8585301327T DE 3579333 T DE3579333 T DE 3579333T DE 3579333 D1 DE3579333 D1 DE 3579333D1
Authority
DE
Germany
Prior art keywords
voltage detector
detector
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585301327T
Other languages
English (en)
Inventor
Hideki Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3579333D1 publication Critical patent/DE3579333D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Measurement Of Current Or Voltage (AREA)
DE8585301327T 1984-02-28 1985-02-27 Spannungsdetektor. Expired - Fee Related DE3579333D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59035115A JPS60179998A (ja) 1984-02-28 1984-02-28 電圧検出回路

Publications (1)

Publication Number Publication Date
DE3579333D1 true DE3579333D1 (de) 1990-10-04

Family

ID=12432927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585301327T Expired - Fee Related DE3579333D1 (de) 1984-02-28 1985-02-27 Spannungsdetektor.

Country Status (5)

Country Link
US (1) US4636658A (de)
EP (1) EP0155117B1 (de)
JP (1) JPS60179998A (de)
KR (1) KR890004304B1 (de)
DE (1) DE3579333D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8714849U1 (de) * 1986-12-23 1987-12-23 Jenoptik Jena Gmbh, Ddr 6900 Jena Geregelter CMOS-Substratspannungsgenerator
NL8800287A (nl) * 1988-02-08 1989-09-01 Philips Nv Geheugenschakeling met een uitwisbaar programmeerbaar geheugen, generator voor het opwekken van een programmeerspanning voor het geheugen, spanningsregelaar en flankregelaar, beide geschikt voor toepassing in de generator, en een diode-element.
JP3124781B2 (ja) * 1990-03-30 2001-01-15 富士通株式会社 半導体集積回路装置
GB9320246D0 (en) * 1993-10-01 1993-11-17 Sgs Thomson Microelectronics A driver circuit
KR100384854B1 (ko) * 1997-03-21 2003-08-06 기아자동차주식회사 가변댐퍼의회전각측정장치
US5874854A (en) * 1997-03-28 1999-02-23 International Business Machines Corporation Control scheme for on-chip capacitor degating
US6204723B1 (en) * 1999-04-29 2001-03-20 International Business Machines Corporation Bias circuit for series connected decoupling capacitors
US6518814B1 (en) * 1999-12-28 2003-02-11 Koninklijke Philips Electronics N.V. High-voltage capacitor voltage divider circuit having a high-voltage silicon-on-insulation (SOI) capacitor
US6407898B1 (en) * 2000-01-18 2002-06-18 Taiwan Semiconductor Manufacturing Company Ltd. Protection means for preventing power-on sequence induced latch-up
US7061308B2 (en) * 2003-10-01 2006-06-13 International Business Machines Corporation Voltage divider for integrated circuits
WO2006052233A1 (en) * 2004-11-04 2006-05-18 International Business Machines Corporation Voltage divider for integrated circuits

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1357515A (en) * 1972-03-10 1974-06-26 Matsushita Electronics Corp Method for manufacturing an mos integrated circuit
US3893146A (en) * 1973-12-26 1975-07-01 Teletype Corp Semiconductor capacitor structure and memory cell, and method of making
CH615277A5 (en) * 1976-08-31 1980-01-15 Hitachi Ltd Circuit arrangement for voltage detection
JPS55149871A (en) * 1978-07-31 1980-11-21 Fujitsu Ltd Line voltage detector
US4451748A (en) * 1982-01-15 1984-05-29 Intel Corporation MOS High voltage switching circuit
US4521696A (en) * 1982-07-06 1985-06-04 Motorola, Inc. Voltage detecting circuit
US4543594A (en) * 1982-09-07 1985-09-24 Intel Corporation Fusible link employing capacitor structure
US4527180A (en) * 1983-01-31 1985-07-02 Intel Corporation MOS Voltage divider structure suitable for higher potential feedback regulation

Also Published As

Publication number Publication date
JPH0127519B2 (de) 1989-05-29
EP0155117B1 (de) 1990-08-29
KR850006899A (ko) 1985-10-21
US4636658A (en) 1987-01-13
EP0155117A3 (en) 1986-12-10
JPS60179998A (ja) 1985-09-13
KR890004304B1 (ko) 1989-10-30
EP0155117A2 (de) 1985-09-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee