DE3578262D1 - Elektrode eines halbleiterbauelements und verfahren zu ihrer herstellung. - Google Patents
Elektrode eines halbleiterbauelements und verfahren zu ihrer herstellung.Info
- Publication number
- DE3578262D1 DE3578262D1 DE8585102349T DE3578262T DE3578262D1 DE 3578262 D1 DE3578262 D1 DE 3578262D1 DE 8585102349 T DE8585102349 T DE 8585102349T DE 3578262 T DE3578262 T DE 3578262T DE 3578262 D1 DE3578262 D1 DE 3578262D1
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- production
- semiconductor component
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59038629A JPS60183726A (ja) | 1984-03-02 | 1984-03-02 | 半導体装置の電極パタ−ンの形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3578262D1 true DE3578262D1 (de) | 1990-07-19 |
Family
ID=12530530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585102349T Expired - Lifetime DE3578262D1 (de) | 1984-03-02 | 1985-03-01 | Elektrode eines halbleiterbauelements und verfahren zu ihrer herstellung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4650543A (de) |
EP (1) | EP0156185B1 (de) |
JP (1) | JPS60183726A (de) |
DE (1) | DE3578262D1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61117868A (ja) * | 1984-11-14 | 1986-06-05 | Toshiba Corp | 半導体装置及びその製造方法 |
US4965218A (en) * | 1985-10-21 | 1990-10-23 | Itt Corporation | Self-aligned gate realignment employing planarizing overetch |
US4735913A (en) * | 1986-05-06 | 1988-04-05 | Bell Communications Research, Inc. | Self-aligned fabrication process for GaAs MESFET devices |
US4849376A (en) * | 1987-01-12 | 1989-07-18 | Itt A Division Of Itt Corporation Gallium Arsenide Technology Center | Self-aligned refractory gate process with self-limiting undercut of an implant mask |
US4824803A (en) * | 1987-06-22 | 1989-04-25 | Standard Microsystems Corporation | Multilayer metallization method for integrated circuits |
JPH01109770A (ja) * | 1987-10-22 | 1989-04-26 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US4935805A (en) * | 1988-05-16 | 1990-06-19 | Eaton Corporation | T-type undercut electrical contact on a semiconductor substrate |
US4923827A (en) * | 1988-05-16 | 1990-05-08 | Eaton Corporation | T-type undercut electrical contact process on a semiconductor substrate |
ATE86797T1 (de) * | 1988-12-16 | 1993-03-15 | Siemens Ag | Verfahren zur selbstjustierten herstellung von kontakten zwischen in uebereinander angeordneten verdrahtungsebenen einer integrierten schaltung enthaltenen leiterbahnen. |
US5153754A (en) * | 1989-06-30 | 1992-10-06 | General Electric Company | Multi-layer address lines for amorphous silicon liquid crystal display devices |
US5126007A (en) * | 1990-11-16 | 1992-06-30 | At&T Bell Laboratories | Method for etching a pattern in layer of gold |
EP0499979A3 (en) * | 1991-02-16 | 1993-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
JP2794499B2 (ja) | 1991-03-26 | 1998-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5168071A (en) * | 1991-04-05 | 1992-12-01 | At&T Bell Laboratories | Method of making semiconductor devices |
US5212147A (en) * | 1991-05-15 | 1993-05-18 | Hewlett-Packard Company | Method of forming a patterned in-situ high Tc superconductive film |
JP2845303B2 (ja) | 1991-08-23 | 1999-01-13 | 株式会社 半導体エネルギー研究所 | 半導体装置とその作製方法 |
JPH07161659A (ja) * | 1993-12-07 | 1995-06-23 | Nec Corp | 半導体装置およびその製造方法 |
US6057604A (en) * | 1993-12-17 | 2000-05-02 | Stmicroelectronics, Inc. | Integrated circuit contact structure having gate electrode protection for self-aligned contacts with zero enclosure |
US5843289A (en) * | 1996-01-22 | 1998-12-01 | Etex Corporation | Surface modification of medical implants |
AU1448301A (en) * | 1999-11-01 | 2001-05-14 | Bmc Industries, Inc. | Metal composite articles and method of manufacture |
US6365057B1 (en) | 1999-11-01 | 2002-04-02 | Bmc Industries, Inc. | Circuit manufacturing using etched tri-metal media |
US6409930B1 (en) | 1999-11-01 | 2002-06-25 | Bmc Industries, Inc. | Lamination of circuit sub-elements while assuring registration |
US6468439B1 (en) | 1999-11-01 | 2002-10-22 | Bmc Industries, Inc. | Etching of metallic composite articles |
DE102004019588A1 (de) * | 2004-04-22 | 2005-11-17 | Osram Opto Semiconductors Gmbh | Verfahren zur Strukturierung von zumindest einer Schicht sowie elektrisches Bauelement mit Strukturen aus der Schicht |
US20070155899A1 (en) * | 2005-12-21 | 2007-07-05 | Ips Corporation | Elastic methacrylate compositions |
US20070155879A1 (en) * | 2005-12-22 | 2007-07-05 | Ips Corporation | Adhesive compositions for bonding metals |
JP2008179466A (ja) * | 2007-01-26 | 2008-08-07 | Ss Pharmaceut Co Ltd | 錠剤搬送装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3994758A (en) * | 1973-03-19 | 1976-11-30 | Nippon Electric Company, Ltd. | Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection |
JPS5279664A (en) * | 1975-12-25 | 1977-07-04 | Mitsubishi Electric Corp | Forming method for electrodes of semiconductor devices |
US4272348A (en) * | 1978-11-20 | 1981-06-09 | International Business Machines Corporation | Bubble device fabrication |
US4301233A (en) * | 1980-05-29 | 1981-11-17 | Eaton Corporation | Beam lead Schottky barrier diode for operation at millimeter and submillimeter wave frequencies |
JPS57128071A (en) * | 1981-01-30 | 1982-08-09 | Fujitsu Ltd | Field-effect type semiconductor device and manufacture thereof |
JPS5886724A (ja) * | 1981-11-18 | 1983-05-24 | Nec Corp | 電極および配線の製造方法 |
-
1984
- 1984-03-02 JP JP59038629A patent/JPS60183726A/ja active Pending
-
1985
- 1985-02-28 US US06/706,617 patent/US4650543A/en not_active Expired - Lifetime
- 1985-03-01 DE DE8585102349T patent/DE3578262D1/de not_active Expired - Lifetime
- 1985-03-01 EP EP85102349A patent/EP0156185B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0156185A1 (de) | 1985-10-02 |
JPS60183726A (ja) | 1985-09-19 |
US4650543A (en) | 1987-03-17 |
EP0156185B1 (de) | 1990-06-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |