DE3481746D1 - Bipolartransistor mit heterouebergang zwischen basis und kollektor. - Google Patents
Bipolartransistor mit heterouebergang zwischen basis und kollektor.Info
- Publication number
- DE3481746D1 DE3481746D1 DE8484302952T DE3481746T DE3481746D1 DE 3481746 D1 DE3481746 D1 DE 3481746D1 DE 8484302952 T DE8484302952 T DE 8484302952T DE 3481746 T DE3481746 T DE 3481746T DE 3481746 D1 DE3481746 D1 DE 3481746D1
- Authority
- DE
- Germany
- Prior art keywords
- heterouition
- collector
- base
- bipolar transistor
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8607183A JPS59211267A (ja) | 1983-05-17 | 1983-05-17 | ヘテロ接合バイポ−ラトランジスタ |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3481746D1 true DE3481746D1 (de) | 1990-04-26 |
Family
ID=13876469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484302952T Expired - Lifetime DE3481746D1 (de) | 1983-05-17 | 1984-05-02 | Bipolartransistor mit heterouebergang zwischen basis und kollektor. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0134069B1 (de) |
JP (1) | JPS59211267A (de) |
DE (1) | DE3481746D1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2647824B2 (ja) * | 1984-08-10 | 1997-08-27 | 三洋電機株式会社 | 半導体積層構造 |
US4788579A (en) * | 1985-09-30 | 1988-11-29 | The General Electric Company | Semiconductor superlattice |
GB2181299B (en) * | 1985-09-30 | 1989-03-15 | Gen Electric Plc | Semiconductor devices |
CA1299771C (en) * | 1987-02-06 | 1992-04-28 | Tadao Ishibashi | Heterojunction bipolar transistor with collector buffer layer |
EP0355464A3 (de) * | 1988-08-15 | 1990-04-18 | Motorola, Inc. | Auf kritisch fehlorientiertem Substrat gebildeter Heterojunction-Bipolartransistor |
JP2801624B2 (ja) * | 1988-12-09 | 1998-09-21 | 株式会社東芝 | ヘテロ接合バイポーラトランジスタ |
US5162243A (en) * | 1991-08-30 | 1992-11-10 | Trw Inc. | Method of producing high reliability heterojunction bipolar transistors |
JP2731089B2 (ja) * | 1991-10-02 | 1998-03-25 | 三菱電機株式会社 | 高速動作半導体装置およびその製造方法 |
DE102008044069B3 (de) | 2008-11-26 | 2010-08-05 | Airbus Deutschland Gmbh | Formkörper zur Herstellung eines Faserverbundbauteils |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5511330A (en) * | 1978-07-08 | 1980-01-26 | Shunpei Yamazaki | Semiconductor device having continuous junction |
JPS5511329A (en) * | 1978-07-08 | 1980-01-26 | Shunpei Yamazaki | Semiconductor device |
DE2847451C2 (de) * | 1978-11-02 | 1986-06-12 | Telefunken electronic GmbH, 7100 Heilbronn | Halbleiterbauelement und Verfahren zum Herstellen |
DE3380047D1 (en) * | 1982-09-17 | 1989-07-13 | France Etat | Ballistic heterojunction bipolar transistor |
-
1983
- 1983-05-17 JP JP8607183A patent/JPS59211267A/ja active Granted
-
1984
- 1984-05-02 DE DE8484302952T patent/DE3481746D1/de not_active Expired - Lifetime
- 1984-05-02 EP EP19840302952 patent/EP0134069B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0134069B1 (de) | 1990-03-21 |
JPS59211267A (ja) | 1984-11-30 |
EP0134069A3 (en) | 1986-12-30 |
JPH0315353B2 (de) | 1991-02-28 |
EP0134069A2 (de) | 1985-03-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |