DE3888085D1 - Bipolartransistor mit Heteroübergang. - Google Patents

Bipolartransistor mit Heteroübergang.

Info

Publication number: DE3888085D1
Authority: DE; Germany
Prior art keywords: heterojunction; bipolar transistor; bipolar; transistor
Prior art date: 1987-10-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE88113410T

Other languages

English (en)

Other versions

DE3888085T2 (de

Inventor

David J Frank

Ronald F Marks

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-10-30

Filing date

1988-08-18

Publication date

1994-04-07

1988-08-18 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1994-04-07 Application granted granted Critical

1994-04-07 Publication of DE3888085D1 publication Critical patent/DE3888085D1/de

1994-09-15 Publication of DE3888085T2 publication Critical patent/DE3888085T2/de

2008-08-19 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Bipolar Transistors (AREA)

DE3888085T 1987-10-30 1988-08-18 Bipolartransistor mit Heteroübergang. Expired - Fee Related DE3888085T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US07/115,778 US4821082A (en)	1987-10-30	1987-10-30	Heterojunction bipolar transistor with substantially aligned energy levels

Publications (2)

Publication Number	Publication Date
DE3888085D1 true DE3888085D1 (de)	1994-04-07
DE3888085T2 DE3888085T2 (de)	1994-09-15

Family

ID=22363335

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE3888085T Expired - Fee Related DE3888085T2 (de)	1987-10-30	1988-08-18	Bipolartransistor mit Heteroübergang.

Country Status (4)

Country	Link
US (1)	US4821082A (de)
EP (1)	EP0313749B1 (de)
JP (1)	JP2501625B2 (de)
DE (1)	DE3888085T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2630445B2 (ja) *	1988-10-08	1997-07-16	富士通株式会社	半導体装置
US5164800A (en) *	1990-08-30	1992-11-17	Sumitomo Electric Industries, Ltd.	Semiconductor device
US5027182A (en) *	1990-10-11	1991-06-25	The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration	High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks
JPH0766984B2 (ja) *	1992-02-13	1995-07-19	インターナショナル・ビジネス・マシーンズ・コーポレイション	ヘテロ超格子ｐｎ接合
JPH05243256A (ja) *	1992-03-02	1993-09-21	Matsushita Electric Ind Co Ltd	ヘテロ接合バイポーラトランジスタおよびその製造方法
US5631477A (en) *	1995-06-02	1997-05-20	Trw Inc.	Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor
US5610086A (en) *	1995-06-06	1997-03-11	Hughes Aircraft Company	Method of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications
JP3628873B2 (ja) *	1998-04-28	2005-03-16	富士通株式会社	半導体装置及びその製造方法
WO2000079600A1 (en) *	1999-06-22	2000-12-28	Hrl Laboratories, Llc	SINGLE HETEROJUNCTION InP-COLLECTOR BJT DEVICE AND METHOD
US6670653B1 (en) *	1999-07-30	2003-12-30	Hrl Laboratories, Llc	InP collector InGaAsSb base DHBT device and method of forming same
US6762480B2 (en)	2001-02-27	2004-07-13	Agilent Technologies, Inc.	Thin gallium-arsenide-antimonide base heterojunction bipolar transistor (HBT) having improved gain
US6696710B2 (en)	2001-02-27	2004-02-24	Agilent Technologies, Inc.	Heterojunction bipolar transistor (HBT) having an improved emitter-base junction
WO2003009396A2 (en) *	2001-07-20	2003-01-30	Microlink Devices, Inc.	Algaas or ingap low turn-on voltage gaas-based heterojunction bipolar transistor
US6992337B2 (en) *	2004-04-02	2006-01-31	Agilent Technologies, Inc.	Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability
CA2529595C (en) *	2004-07-01	2013-02-26	Nippon Telegraph And Telephone Corporation	Heterostructure bipolar transistor
JP5098193B2 (ja) *	2005-03-23	2012-12-12	ソニー株式会社	ヘテロ接合バイポーラトランジスタ
JP2006303222A (ja) *	2005-04-21	2006-11-02	Mitsubishi Electric Corp	ヘテロ接合バイポーラトランジスタおよびそれを備える増幅器
US7868335B1 (en) *	2008-08-18	2011-01-11	Hrl Laboratories, Llc	Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs
US9040929B2 (en) *	2012-07-30	2015-05-26	International Business Machines Corporation	Charge sensors using inverted lateral bipolar junction transistors
US9530708B1 (en)	2013-05-31	2016-12-27	Hrl Laboratories, Llc	Flexible electronic circuit and method for manufacturing same
US9548408B2 (en)	2014-04-15	2017-01-17	L-3 Communications Cincinnati Electronics Corporation	Tunneling barrier infrared detector devices

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4195305A (en) *	1978-09-25	1980-03-25	Varian Associates, Inc.	Lattice constant grading in the Aly Ga1-y As1-x Sbx alloy system
FR2493047A1 (fr) *	1980-10-28	1982-04-30	Thomson Csf	Transistor emetteur-recepteur de lumiere pour telecommunications a l'alternat sur fibre optique
US4573064A (en) *	1981-11-02	1986-02-25	Texas Instruments Incorporated	GaAs/GaAlAs Heterojunction bipolar integrated circuit devices
US4538165A (en) *	1982-03-08	1985-08-27	International Business Machines Corporation	FET With heterojunction induced channel
DE3380047D1 (en) *	1982-09-17	1989-07-13	France Etat	Ballistic heterojunction bipolar transistor
US4672404A (en) *	1982-09-17	1987-06-09	Cornell Research Foundation, Inc.	Ballistic heterojunction bipolar transistor
US4728616A (en) *	1982-09-17	1988-03-01	Cornell Research Foundation, Inc.	Ballistic heterojunction bipolar transistor
US4583105A (en) *	1982-12-30	1986-04-15	International Business Machines Corporation	Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage
US4529996A (en) *	1983-04-14	1985-07-16	Allied Coporation	Indium phosphide-boron phosphide heterojunction bipolar transistor
JPS59211268A (ja) *	1983-05-17	1984-11-30	Toshiba Corp	ヘテロ接合バイポ−ラトランジスタ
US4593305A (en) *	1983-05-17	1986-06-03	Kabushiki Kaisha Toshiba	Heterostructure bipolar transistor
US4617724A (en) *	1983-06-30	1986-10-21	Fujitsu Limited	Process for fabricating heterojunction bipolar transistor with low base resistance
US4586071A (en) *	1984-05-11	1986-04-29	International Business Machines Corporation	Heterostructure bipolar transistor
US4581621A (en) *	1984-07-02	1986-04-08	Texas Instruments Incorporated	Quantum device output switch
US4559696A (en) *	1984-07-11	1985-12-24	Fairchild Camera & Instrument Corporation	Ion implantation to increase emitter energy gap in bipolar transistors
JPS61107758A (ja) *	1984-10-31	1986-05-26	Fujitsu Ltd	ＧａＡｓ集積回路及びその製造方法
JPH0763065B2 (ja) *	1984-12-25	1995-07-05	日本電気株式会社	低閾値電圧のバイポーラトランジスタ
JPS61203675A (ja) *	1985-03-07	1986-09-09	Nec Corp	半導体装置
JPH088350B2 (ja) *	1985-04-08	1996-01-29	日本電気株式会社	半導体装置
JPH0621591A (ja) *	1992-07-06	1994-01-28	Mitsubishi Electric Corp	プリント配線板

1987
- 1987-10-30 US US07/115,778 patent/US4821082A/en not_active Expired - Lifetime
1988
- 1988-08-18 JP JP63203976A patent/JP2501625B2/ja not_active Expired - Lifetime
- 1988-08-18 DE DE3888085T patent/DE3888085T2/de not_active Expired - Fee Related
- 1988-08-18 EP EP88113410A patent/EP0313749B1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US4821082A (en)	1989-04-11
JP2501625B2 (ja)	1996-05-29
EP0313749B1 (de)	1994-03-02
JPH01136368A (ja)	1989-05-29
EP0313749A3 (en)	1990-05-16
DE3888085T2 (de)	1994-09-15
EP0313749A2 (de)	1989-05-03

Legal Events

Date	Code	Title	Description
1995-03-30	8364	No opposition during term of opposition
1997-08-14	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3884292D1 (de)	1993-10-28	Bipolarer Transistor mit Heteroübergang.
DE69032597D1 (de)	1998-10-01	Bipolartransistor mit Heteroübergang
DE3583119D1 (de)	1991-07-11	Bipolartransistor mit heterouebergang.
DE3888085D1 (de)	1994-04-07	Bipolartransistor mit Heteroübergang.
DE3851079D1 (de)	1994-09-22	Vernetzbare Kunststoff-Zusammensetzung.
DE3751972D1 (de)	1997-01-16	Bipolarer Transistor
EP0408252A3 (en)	1991-06-12	Heterojunction bipolar transistor
DE3788453D1 (de)	1994-01-27	Komplementäres vertikales bipolares Transistorpaar mit flachem Übergang.
DE3785196D1 (de)	1993-05-06	Bipolartransistor mit heterouebergang.
DE3889610D1 (de)	1994-06-23	Halbleiteranordnung mit einem Trench-Bipolartransistor.
DE3882304D1 (de)	1993-08-19	Mikrowellentransistor mit doppelheterouebergang.
DE3853026D1 (de)	1995-03-23	Transistor mit heissen Elektronen.
DE3860836D1 (de)	1990-11-29	Bipolarer transistor mit heterouebergang.
DE3884665D1 (de)	1993-11-11	Hochleistungstransistor mit Seitenwandemitter.
FR2606214B1 (fr)	1989-12-15	Transistor bipolaire du type heterojonction
DE68906095D1 (de)	1993-05-27	Vertikaler bipolartransistor.
DE3851175D1 (de)	1994-09-29	Bipolartransistor mit Heteroübergängen.
DE3788500D1 (de)	1994-01-27	Bipolarer Halbleitertransistor.
DE3750310D1 (de)	1994-09-08	Heteroübergangs-Feldeffektanordnung.
EP0273363A3 (en)	1988-11-02	Heterojunction bipolar transistor with ballistic operation
DE3882565D1 (de)	1993-09-02	Bipolartransistor.
DE3851991D1 (de)	1994-12-08	Bipolartransistoren.
DE3687049D1 (de)	1992-12-10	Bipolare eigenschaften aufweisender transistor mit heterouebergang.
DE3888602D1 (de)	1994-04-28	Bipolartransistor mit Heteroübergängen.
DE3481746D1 (de)	1990-04-26	Bipolartransistor mit heterouebergang zwischen basis und kollektor.