DE3478975D1 - Ion microbeam implanting apparatus - Google Patents

Ion microbeam implanting apparatus

Info

Publication number
DE3478975D1
DE3478975D1 DE8484902825T DE3478975T DE3478975D1 DE 3478975 D1 DE3478975 D1 DE 3478975D1 DE 8484902825 T DE8484902825 T DE 8484902825T DE 3478975 T DE3478975 T DE 3478975T DE 3478975 D1 DE3478975 D1 DE 3478975D1
Authority
DE
Germany
Prior art keywords
implanting apparatus
ion microbeam
microbeam
ion
implanting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484902825T
Other languages
English (en)
Inventor
Tohru Seibu Sayamadai Ishitani
Hifumi Tamura
Kaoru Hitachi Dai Kyou Umemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3478975D1 publication Critical patent/DE3478975D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H01J37/3172—Maskless patterned ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Tubes For Measurement (AREA)
DE8484902825T 1983-09-14 1984-07-20 Ion microbeam implanting apparatus Expired DE3478975D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58168137A JPS6062045A (ja) 1983-09-14 1983-09-14 イオンマイクロビ−ム打込み装置
PCT/JP1984/000372 WO1985001389A1 (en) 1983-09-14 1984-07-20 Ion microbeam implanting apparatus

Publications (1)

Publication Number Publication Date
DE3478975D1 true DE3478975D1 (en) 1989-08-17

Family

ID=15862517

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484902825T Expired DE3478975D1 (en) 1983-09-14 1984-07-20 Ion microbeam implanting apparatus

Country Status (5)

Country Link
US (1) US4697086A (de)
EP (1) EP0156913B1 (de)
JP (1) JPS6062045A (de)
DE (1) DE3478975D1 (de)
WO (1) WO1985001389A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3532781A1 (de) * 1985-09-13 1987-03-19 Siemens Ag Anordnung zur detektion von sekundaer- und/oder rueckstreuelektronen in einem elektronenstrahlgeraet
JPH06101318B2 (ja) * 1985-10-16 1994-12-12 株式会社日立製作所 イオンマイクロビ−ム装置
JPS62112844U (de) * 1986-01-08 1987-07-18
US4835399A (en) * 1986-08-22 1989-05-30 Hitachi, Ltd. Charged particle beam apparatus
AT391771B (de) * 1987-03-05 1990-11-26 Ims Ionen Mikrofab Syst Einrichtung zur verkleinernden oder 1 : 1 ionenprojektionslithographie
US4789787A (en) * 1987-05-27 1988-12-06 Microbeam Inc. Wien filter design
GB8725459D0 (en) * 1987-10-30 1987-12-02 Nat Research Dev Corpn Generating particle beams
US5063294A (en) * 1989-05-17 1991-11-05 Kabushiki Kaisha Kobe Seiko Sho Converged ion beam apparatus
US5134299A (en) * 1991-03-13 1992-07-28 Eaton Corporation Ion beam implantation method and apparatus for particulate control
US6410924B1 (en) * 1999-11-16 2002-06-25 Schlumberger Technologies, Inc. Energy filtered focused ion beam column
US6639227B1 (en) 2000-10-18 2003-10-28 Applied Materials, Inc. Apparatus and method for charged particle filtering and ion implantation
FR2823005B1 (fr) * 2001-03-28 2003-05-16 Centre Nat Rech Scient Dispositif de generation d'un faisceau d'ions et procede de reglage de ce faisceau
EP1388883B1 (de) * 2002-08-07 2013-06-05 Fei Company Koaxiale FIB-SEM-Säule
GB0320187D0 (en) * 2003-08-28 2003-10-01 Shimadzu Res Lab Europe Ltd Particle optical apparatus
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
JP5033314B2 (ja) * 2004-09-29 2012-09-26 株式会社日立ハイテクノロジーズ イオンビーム加工装置及び加工方法
JP5509239B2 (ja) * 2004-09-29 2014-06-04 株式会社日立ハイテクノロジーズ イオンビーム加工装置及び加工方法
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
JP5127148B2 (ja) 2006-03-16 2013-01-23 株式会社日立ハイテクノロジーズ イオンビーム加工装置
US7763851B2 (en) * 2006-12-22 2010-07-27 Ims Nanofabrication Ag Particle-beam apparatus with improved wien-type filter
EP1956630A1 (de) 2007-02-06 2008-08-13 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Achromatischer Massenseparator
US9443698B2 (en) * 2008-10-06 2016-09-13 Axcelis Technologies, Inc. Hybrid scanning for ion implantation
US8283629B1 (en) 2011-04-15 2012-10-09 Fei Company Aberration-corrected wien ExB mass filter with removal of neutrals from the Beam
US8835866B2 (en) 2011-05-19 2014-09-16 Fei Company Method and structure for controlling magnetic field distributions in an ExB Wien filter
JP5628862B2 (ja) * 2012-04-27 2014-11-19 株式会社日立ハイテクノロジーズ イオンビーム加工装置
CN110662335B (zh) * 2019-09-25 2020-08-14 北京航空航天大学 一种用于平衡速度选择仪端部电磁场非均匀性的结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52107897A (en) * 1976-03-05 1977-09-09 Hitachi Ltd Ion microanalyzer equipped with primary ion beam separator
US4315153A (en) * 1980-05-19 1982-02-09 Hughes Aircraft Company Focusing ExB mass separator for space-charge dominated ion beams
GB2098793A (en) * 1981-05-18 1982-11-24 Varian Associates Method of and apparatus for deflecting an ion beam of an ion implantater onto an ion absorbing target
DE3275679D1 (en) * 1981-05-26 1987-04-16 Hughes Aircraft Co Focused ion beam microfabrication column
JPS593856A (ja) * 1982-06-29 1984-01-10 Fujitsu Ltd Ｅ×ｂ速度選別器

Also Published As

Publication number Publication date
EP0156913A1 (de) 1985-10-09
US4697086A (en) 1987-09-29
EP0156913B1 (de) 1989-07-12
JPS6062045A (ja) 1985-04-10
EP0156913A4 (de) 1986-02-20
WO1985001389A1 (en) 1985-03-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee