GB2098793A - Method of and apparatus for deflecting an ion beam of an ion implantater onto an ion absorbing target - Google Patents
Method of and apparatus for deflecting an ion beam of an ion implantater onto an ion absorbing target Download PDFInfo
- Publication number
- GB2098793A GB2098793A GB8210744A GB8210744A GB2098793A GB 2098793 A GB2098793 A GB 2098793A GB 8210744 A GB8210744 A GB 8210744A GB 8210744 A GB8210744 A GB 8210744A GB 2098793 A GB2098793 A GB 2098793A
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- GB
- United Kingdom
- Prior art keywords
- plates
- target
- deflecting
- axis
- along
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1477—Scanning means electrostatic
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The ion beam is normally deflected through a predetermined angle from the straight line path 20 onto a semiconductor target wafer 42. The beam can also be deflected through an equal but opposite angle from path 20 onto a graphite coating 38 that constitutes a beam dump. The beam is deflected in the two directions by applying equal amplitude but opposite polarity DC offset voltages to the X scan electrostatic deflection plates 23 positioned downstream of the Y scan electrostatic deflection plates 22. The beam is scanned whether incident on the target 42 or the beam dump 38, whereby the life of the latter is increased. Isotropic graphite plates 32, 33, and 35 are biassed to repel back to the beam dump secondary electrons emitted therefrom. <IMAGE>
Description
SPECIFICATION
Method of and apparatus for deflecting an ion beam of an ion implantater onto an ion absorbing target
Field of the Invention
The present invention relates generally to ion implanter apparatus and methods and more particular to a method of and apparatus for implating ion beams by deflecting the beam through predetermined oppositely directed angles onto a wafer target being implanted and onto an ion absorbing target.
Background Art
Machines for implanting semiconductor target wafers with ions have been extensively developed. Such machines typically include an ion source, an ion accelerator structure, an ion beam analyzer that selects an ion species from the source, and a lens for controlling the diameter of the beam. Downstream of the lens is a deflection system for the beam which is travelling a straight line path along a longitudinal axis. In some machines, the deflection system includes a pair of x and y electrostatic deflection plates, one downstream of the other in the ion beam propagation path. The downstream, usually x, deflection plates deflect the beam form the straight line path through a predetermined angle, typically from 5" to 7" to remove neutral ions that are not of the desired species from the beam irradiating the target wafer.The deflection system is also responsive to periodic signals that cause the beam to be scanned across the target wafer.
Downstream of the deflection system is a biased plate that supresses secondary electrons which have a tendency to be derived in response to the wafer or other structures being irradiated by the ion beam.
It is necessary, from time to time, to decouple, i.e., gate, the beam from the target wafer. Several techniques have been devised to accomplish this purpose. Amongst the techniques are mechanically blocking the beam, electrostatic repulsion of the beam from the target wafer, deflection from the wafer by magnetic or electrostatic deflection systems.
For various reasons, the electrostatic deflection system has been widely used to gate the beam from the target wafer. One particular electrostatic beam gating system uses the y axis deflection plates that are employed to scan the beam across the target. These plates are positioned upstream of the x axis plate that deflect the beam from the straight line path, to remove the neutral ions from the beam irradiating the wafer. During the beam gating operation the beam is usually deflected onto a metallic beam gate target in a vacuum envelope containing the beam.
Because it is necessary to irradiate the wafer with ions of various species, ion beams deflected by the deflection system have differing energies and currents. Thereby, beams of different ion species are deflected through differing angles during the beam gating operation. The differing deflection angles of the beam during the beam gating operation cause the beam to strike various parts in the vacuum envelope containing the beam; this can cause heat or sputtering damage to metallic portions of the ion beam scanning system. Such striking also causes secondary electrons to be derived. In some instances, the secondary electrons strike the deflection plates, the target wafer or other objects with deleterious results.In some devices, there is inadequate space within the envelope to provide a beam gate target and/or to provide a measuring device to verify that the beam is being steered properly away from the target wafer. To provide the desired control, relatively complex electronic circuits are frequently employed.
It is accordingly an object of the present invention to provide a new and improved apparatus for and method of deflecting ion beams onto a gate target.
Another object of the invention is to provide a new and improved method of and apparatus for minimizing secondary electrons while the beam of an ion implanter is deflected onto a gate target.
An additional object of the invention is to provide a new and improved, relatively inexpensive and reliable method of and apparatus for enabling ion beams associated with different species, and thereby having various energies and/or currents, to be accurately and easily deflected onto a gate target.
A further object of the invention is to provide a new and improved ion implanter having sufficient space to enable a relatively large area gate target to be located therein, with the resuiting advantage that the beam can be scanned across the gate target and heating of the gate target is reduced.
The Invention
In accordance with the present invention, a charged particle beam that is normally defleceted in a predetermined first direction by a predetermined angle from a straight line path onto a main target is deflected by the predetermined angle from the straight line path in a direction that is opposite to the first direction onto a beam dump or gate target that absorbs the beam. The beam is preferably directed in the opposite direction by applying equal amplitude but opposite polarity DC offset voltages to electrostatic deflection plates. A first set of the electrostatic deflection plates is downstream of a second set of electrostatic deflection plates. The downstream set of deflection plates is responsive to the equal amplitude and opposite polarity offset voltages.The electrostatic deflection plates periodically deflect the beam by applying ortho gonal, but equal voltages to the first and second deflection plates to scan the beam across both targets. Thereby, heating of the targets is not deleterious.
The technique is preferaby employed in a machine for implanting positive ions from an ion source into semiconductor or target wafers. ions from the source are accelerated into a beam having a segment with a longitudinal axis. The electrostatic deflection plates deflect the straight line segment of the beam along first and second axes at righr: angles to the longitudinal axis of the beam. Downstream of the deflection plates a secondary electron repelling structure is provided. The secondary electron repelling structure includes apertures for enabling the beam, as deflected from the longitudinal axis by the electrostatic plates along the first axis to irradiate the target wafer, as well as the ion beam gate target.
The repelling structure is positioned between the beam gate target and the deflecting plates and in close proximity to the target. The seconary electron repelling structure is biased to repel secondary electrons that are derived from the beam gate target when the beam gate target is irradiated by the beam, to minimize secondary electrons. Secondary electrons are also minimized by forming the absorbing target, repelling structure, deflecting structure and other parts within a vacuum envelope containing the implanter of isotropic graphite. Heat buildup in the device is also minimized by mechanically connecting a heat sink to the absorber target.
The foregoing and additional objects and advantages will become apparent from the following detailed description of the drawing.
Brief Description of the Drawing Figure 1 is a schematic diagram of a preferred embodiment of an ion implanter in accordance with the invention; and
Figure 2 is a circuit diagram of the deflection system included in the implanter of Fig.
1.
Detailed description of the drawing
Reference in now made to Fig. 1 of the drawing wherein ion implanter vacuum structure 11 is illustrated as including ion source 12, from which is derived an ion beam by pre-accelerator 1 3. The beam emerging from pre-accelerator 1 3 is bent by magnetic ion species selector 14, that is constructed in the usual manner as a mass analyzer.The magnetic field of selector 1 4 is varied to control the ion species that is bent through the proper angle to traverse resolving aperture 1 5 in plate 1 6 and form a beam that is accelerated to quadra pole doublet lens 1 7 by post-accelerator 1 8. Accelerators 1 3 and 18, selector 14 and lens 1 7 are energized by the usual voltage sources (not shown).
The beam exiting lens 1 7 has a straight line path 20 along a longitudinal axis coincident with the longitudinal axis of metallic, grounded vacuum, envelope 19. The beam exiting lens 1 7 includes charged ions of the selected specie and neutral, i.e., uncharged, ions of another specie. Different beams in tube 1 9 have different energies, as a function of the total accelerating voltages of accelerators 1 3 and 18, and determined by the se elected specie.
The beam exiting lens 1 7 traverses electrostatic deflection system 21 that deflects the beam along first and second axes at right angles to each other and the beam longitudinal axis. Deflection system 21 includes Y axis graphite deflection plates 22 and X axis graphite deflection plates 23, between which is positioned grounded graphite plate 24, having an aperture through which the beam propagates. Plates 23 are positioned downstream of plates 22 to facilitate bending of charged particles in the beam.
Plates 22 and 23 are responsive to beam deflecting source 26 which derives potentials for periodically scanning the beam. Source 26 also deflects the charged particles in the beam along the X axis into beam path 25, away from the neutral particles in the beam that continue in a path aligned with path 20.
Source 26 also, from time to time, deflects the beam along the X axis ina direction opposite from path 25 into beam path 27; beam paths 25 and 27 are removed from the axis of path 220 by equal and opposite angles. Because beam paths 25 and 27 are removed from the axis of path 20 by equal but opposite angles, deflection of the beam from one path to another is accomplished merely by reversing the polarity of offset voltages applied to electrodes 23. Thereby, establishing the correct voltage for deflection of an ion beam having a particular energy and current into path 25 establishes the magnitude of the correct voltage for deflection of the same ion beam into path 27. Of course, polarity reversal for the deflecting offset voltage can easily be accomplished, as described infra.
Downstream of plates 23 is secondary electron suppressor assembly 31 that includes a grounded plate 32, as well as plates 33 and 34 that are maintained at a suitable negative
DC voltage, such as -2 kilovolts, by source 40. Plates 31-34 lie in mutually parallel planes, and each includes an aperture large enough to enable beams traversing paths 25 and 27 to pass through them. Plates 32-35 are preferably made of isotropic graphite to minimize secondary electron emission and absorb ions that might impinge on them, without releasing material or secondary electrons
Plates 33 and 34 are fastened to each other by metal posts 35 to provide a relatively large area equal potential service having high conductivity. Plate 33 is fastened to plate 32 by dielectric posts 36, to electrically insulate these plates from each other.Because of the high negative voltage applied to plates 33 and 34 they repel secondary electrons that might be derived in envelope 1 9.
Downstream of plate 34 is grounded, metal plate 37, having a relatively large area graphite coating 38 on a face thereof to intercept the beam deflected along path 27. Coating 38 thus functions as a gate target for the beam traversing path 27. Coating 38 is formed of the same material as and has the same properties as plates 32-34, to absorb ions in the beam and minimize secondary electron emission. Any secondary electrons that are released from coating 38 are repelled by plate 34 and accelerated back onto plate 37. To minimize heat buildup on plate 37, the plate has a relatively large area and is mechanically connected to heat sink 39, containing a liquid coolant and mounted on the exterior of envelope 1 9. The ion beam traversing path 27 is scanned by deflection source 26 so that no part of coating 38 is constantly irradiated, to increase the coating life.
Plate 37 includes aperture 41 that defines beam path 25, to enable the beam traversing path 25 to irradiate semiconductor target wafer 42, positioned in exit chamber 43 so that the irradiated face thereof is at right angles to path 25; typically, wafer 42 is silicon. The ions irradiating wafer 42 are implanted in the wafer. The ion beam irradiating target wafer 42 is typically, periodically scanned along the X and Y axes through relatively small angles, such as plus or minus 2.5 degrees, with a plus 7 degree deflection existing between the axes of paths 20 and 25 along the X axis.Because the deflection voltage for the beam irradiating gate target 37 is merely reversed in polarity relative to the deflection voltage for the beam irradiating target wafer 41, a minus 7 degree X axis deflection exists between the axes of paths 20 and 27 while there is a periodic scanning of the gate target through plus or minus 2.5 degrees.
Reference is now made to Fig. 2 of the drawing, a circuit diagram of deflection voltage source 26. Source 26 includes periodic waveform source 51 that derives a mutually orthogonal, zero average value triangular voltage waveforms 52 and 53 that are processed and respectively applied to X and Y deflection plates 22 and 23. The amplitude of the volage source 51 is adjusted as a function of the energy and current in the ion beam.
Waveform 52 is applied to Y plates 22 via inverting amplifers 54 and 55 that respectively drive opto-isolators 56 and 57 with reversed polarity triangular waveforms. Optoisolators 56 and 57 respectively supply opposite polarity triangular input signals to high voltage drivers 58 and 59 that are connected to symmetrically arranged Y delection plates 22.
The circuit for applying complementary voltages to symmetrical X delecting electrodes 23 is similar to that described for electrodes 22, except for the provisions for reversing the polarity of the voltages to switch the beam from path 25 to path 27. To this end, the X deflection circuit includes a positive DC offset source 61 that is adjusted in amplitude by a slider (not shown) as a function of beam energy and current by a mechanical coupling (not shown) linked to a slider for the amplitude of source 51. The voltage of source 61 is supplied to inverter 62 that derives a negative DC output voltage having an amplitude equal to that of the positive voltage derived from source 61.The DC voltages of source 61 and inverter 62 are respectively applied to terminals 63 and 64 of relay 65, having contact 66 that selectively engages one of the terminals in response to the voltage applied to relay coil 67. When it is desired for the ion beam to be deflected plus 7 degrees to path 25, a positive voltage is appled to coil 67, causing contact 66 to engage terminal 63 and the positive DC of source 61 to be applied to the contact. When it is desired for the beam to traverse path 27, coil 67 is grounded, causing contact 66 to engage terminal 64 and a negative DC voltage equal to the positive voltage of source 61 to be applied to contact 66.
The positive or negative DC voltage at contact 66 is linearly combined in analog summing amplifier 68 with the horizontal X scanning voltage waveform 53 derived from triangular wave source 51. Because waveform 53 has a zero average value, the positive and negative equal amplitude voltages on contact 66 offset the sweeping effects of waveform 53 by equal and opposite amounts. Summing amplifier 68 derives an output signal that is applied to X deflection plates 23 via inverting amplifiers 74 and 75 that respectively drive opto-isolators 76 and 77 with reversed polarity offset traingular waveforms. Opto-isolators 76 and 77 respectively supply opposite polarity triangular wave input signals to high voltage drivers 78 and 79 that are connected to symmetrically arranged X axis deflection plates 23.
While a preferred embodiment of the invention has been specifically described and illustrated, it is to be understood that variations in the described embodiment can be made within the scope of the claims.
Claims (16)
1. A method of deflecting a charged particle beam that is normally deflected in a predetermined first direction by a predetermined angle from a straight line path onto a main target comprising:
deflecting the beam by the predetermined angle from the straight line path in a predetermined second direction that is opposite to the first direction onto a beam dump target that absorbs the beam.
2. The method of claim 1 wherein the beam is deflected in the first and second directions by applying equal amplitude but opposite polarity DC offset voltages to electrostatic deflection platss.
3. The method of claim 1 wherein the beam is deflected in the first and second directions by applying equal amplitude but opposite polarity DC voltages to a first set of electrostatic deflection plates that is downstream of a second set of electrostatic deflection plates, and periodically deflecting the beam by applying orthogonal, but equal amplitude of voltages to the first and second plates.
4. A machine for implanting positve ions from an ion source into a semiconductor target wafer comprising:
means for accelerating ions from the source into a beam having a straight line segment with a longitudinal axis, electrostatic deflection plates for deflecting the beam segment along first and second axes at right angles to the longitudinal axis, means downstream of the deflection plates for repelling any secondary electrons, said repelling means including apertures for enabling the beam, as deflected from the longitudinal axis by the electrostatic deflection plates along the first axis, to irradiate a target wafer, an ion beam dump target, a deflection source for the plates, said deflection voltage source including means for deriving deflecting potentials for selectively deflecting the beam through predetermined oppositely directed angles along the first axis relative to the beam axis onto a wafer via the apertures, and onto the dump target.
5. The machine of claim 4 wherein the means for selectively deflecting includes means for reversing the polarity of the deflecting potentials while maintaining the amplitude of the deflecting potentials constant so the beam is delfected onto a wafer and the dump a target through equal but opposite angles along the first axis.
6. The machine of claim 5 wherein the deflection source includes means for periodically scanning the beam along the first and second axes while the beam is irradiating a wafer and the dump target.
7. The machine of claim 4, 5 or 6 wherein the dump target is grpahite.
8. The machine of claim 4, 5 or 6 wherein the dump target is graphite, the repelling means being positioned between the dump target and the deflection plates and in close proximity to the target, and means for biasing the repelling means to repel secondary electrons derived from the dump target when it is irradiated by the beam.
9. The machine of claim 4, 5 or 6 wherein the absorbing target and repelling means are graphite and are positioned between the dump target and the deflection plates and in close proximity to the target, and means for biasing the repelling means to repel secondary electrons derived from the dump target when it is irradiated by the beam.
1 0. The machine of claim 4, 5 or 6 wherein the dump target is graphite, and a heat sink mechanically connected to the absorber target.
11. The machine of claim 4, 5 or 5 wherein the electrostatic deflection plates include a first set of plates for deflecting the beam along the first axis and a second set of plates for deflecting the beam along the second axis, the first set of plates being positioned downstream of the second set of plates and in proximity to the repeller means.
1 2. Apparatus for implanting positive ions from an ion source into a semiconductor target wafer comprising:
means for accelerating ions from the source into a beam having a segment with a longitudinal axis, electrostatic deflection plates for deflecting the segment along first and second axes at right angles to the longitudinal axis, an ion beam dump target, a deflection voltage source for the plates, said deflection voltage source including means for deriving deflecting potentials for selectively deflecting the beam through predetermined oppositely directed angles along the first axis relative to the beam axis onto a wafer and onto the dump target.
1 3. The apparatus of claim 11 wherein the electrostatic deflection plates include a first set of plates for deflecting the beam along the first axis and a second plates for deflecting the beam along the second axis, the first set of plates being positioned downstream of the second set of plates, the means for selectively deflecting the beam through predetermined oppositely directed angles along the first axis being connected to the first set of plates.
14. The apparatus of claim 1 2 or 1 3 wherein the predetermined oppositely directed angles have the same magnitude.
1 5. A machine for implanting positive ions from an ion source into semiconductor target wafers comprising:
means for accelerating ions from the source
into a beam having a segment with a longitudinal axis, electrostatic deflection plates for deflecting the segment along first and second axes at right angles to the longitudinal axis, an ion beam dump a target positioned downstream of the deflection plates and having a face intercepting ions in the beam, as
deflected from the longitudinal axis by a pre
determined angle in a first direction along the first axis, and a holder for the wafers, the
holder being positioned to hold the wafers so that a face of the wafer irradiated by the beam
is at right angles to a beam path that is
displaced from the longitudinal axis by the
predetermined angle along the first axis in a direction opposite to the first direction.
16. The apparatus of claim 1 2 further including means downstream of the deflection of plates for repelling secondary electrons, said repelling means including apertures for enabling the beam as deflected from the longitudinal axis by the electrostatic plates along the first axis to irradiate the target wafer and beam dump target.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26453281A | 1981-05-18 | 1981-05-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2098793A true GB2098793A (en) | 1982-11-24 |
Family
ID=23006469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8210744A Withdrawn GB2098793A (en) | 1981-05-18 | 1982-04-13 | Method of and apparatus for deflecting an ion beam of an ion implantater onto an ion absorbing target |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS57194444A (en) |
| DE (1) | DE3218592A1 (en) |
| FR (1) | FR2506071A1 (en) |
| GB (1) | GB2098793A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0120576A2 (en) * | 1983-02-24 | 1984-10-03 | Eaton Corporation | Atomic mass measurement system |
| EP0156913A1 (en) * | 1983-09-14 | 1985-10-09 | Hitachi, Ltd. | Ion microbeam implanting apparatus |
| DE3541911A1 (en) * | 1985-07-26 | 1987-01-29 | Balzers Hochvakuum | Process for coating micro-indentations |
| US4804852A (en) * | 1987-01-29 | 1989-02-14 | Eaton Corporation | Treating work pieces with electro-magnetically scanned ion beams |
| US5134299A (en) * | 1991-03-13 | 1992-07-28 | Eaton Corporation | Ion beam implantation method and apparatus for particulate control |
| WO1996026454A1 (en) * | 1995-02-23 | 1996-08-29 | Atomic Energy Of Canada Limited | Electron beam stop analyzer |
| WO2006084143A2 (en) * | 2005-02-04 | 2006-08-10 | Varian Semiconductor Equipment Associates, Inc. | Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery |
| EP1981058A3 (en) * | 2007-04-10 | 2008-12-24 | SEN Corporation, an SHI and Axcelis Company | Ion implantation apparatus and ion implantation method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6298547A (en) * | 1985-10-24 | 1987-05-08 | Nissin Electric Co Ltd | Ion implantation device |
| US7361913B2 (en) * | 2005-04-02 | 2008-04-22 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control |
-
1982
- 1982-04-13 GB GB8210744A patent/GB2098793A/en not_active Withdrawn
- 1982-05-14 JP JP8034582A patent/JPS57194444A/en active Pending
- 1982-05-17 DE DE19823218592 patent/DE3218592A1/en not_active Withdrawn
- 1982-05-18 FR FR8208717A patent/FR2506071A1/en active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0120576A2 (en) * | 1983-02-24 | 1984-10-03 | Eaton Corporation | Atomic mass measurement system |
| EP0120576A3 (en) * | 1983-02-24 | 1986-08-20 | Eaton Corporation | Atomic mass measurement system |
| EP0156913A1 (en) * | 1983-09-14 | 1985-10-09 | Hitachi, Ltd. | Ion microbeam implanting apparatus |
| EP0156913A4 (en) * | 1983-09-14 | 1986-02-20 | Hitachi Ltd | Ion microbeam implanting apparatus. |
| DE3541911A1 (en) * | 1985-07-26 | 1987-01-29 | Balzers Hochvakuum | Process for coating micro-indentations |
| GB2178060A (en) * | 1985-07-26 | 1987-02-04 | Balzers Hochvakuum | Method of coating micro-depressions |
| GB2178060B (en) * | 1985-07-26 | 1989-12-13 | Balzers Hochvakuum | Method of coating micro-depressions |
| US4804852A (en) * | 1987-01-29 | 1989-02-14 | Eaton Corporation | Treating work pieces with electro-magnetically scanned ion beams |
| US5134299A (en) * | 1991-03-13 | 1992-07-28 | Eaton Corporation | Ion beam implantation method and apparatus for particulate control |
| EP0503787A1 (en) * | 1991-03-13 | 1992-09-16 | Eaton Corporation | Ion beam implantation method and apparatus for particulate control |
| WO1996026454A1 (en) * | 1995-02-23 | 1996-08-29 | Atomic Energy Of Canada Limited | Electron beam stop analyzer |
| WO2006084143A2 (en) * | 2005-02-04 | 2006-08-10 | Varian Semiconductor Equipment Associates, Inc. | Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery |
| WO2006084143A3 (en) * | 2005-02-04 | 2007-11-01 | Varian Semiconductor Equipment | Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery |
| CN101218658B (en) * | 2005-02-04 | 2010-05-19 | 瓦里安半导体设备公司 | Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery |
| TWI395249B (en) * | 2005-02-04 | 2013-05-01 | Varian Semiconductor Equipment | Ion implanter and method of operating the same |
| EP1981058A3 (en) * | 2007-04-10 | 2008-12-24 | SEN Corporation, an SHI and Axcelis Company | Ion implantation apparatus and ion implantation method |
| US7851772B2 (en) | 2007-04-10 | 2010-12-14 | Sen Corporation An Shi And Axcelis Company | Ion implantation apparatus and ion implantation method |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3218592A1 (en) | 1982-12-02 |
| FR2506071A1 (en) | 1982-11-19 |
| JPS57194444A (en) | 1982-11-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |