DE3470439D1 - A nonvolatile semiconductor memory device - Google Patents
A nonvolatile semiconductor memory deviceInfo
- Publication number
- DE3470439D1 DE3470439D1 DE8484303503T DE3470439T DE3470439D1 DE 3470439 D1 DE3470439 D1 DE 3470439D1 DE 8484303503 T DE8484303503 T DE 8484303503T DE 3470439 T DE3470439 T DE 3470439T DE 3470439 D1 DE3470439 D1 DE 3470439D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- nonvolatile semiconductor
- nonvolatile
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58180512A JPS6074577A (ja) | 1983-09-30 | 1983-09-30 | 不揮発性半導体メモリ装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3470439D1 true DE3470439D1 (en) | 1988-05-19 |
Family
ID=16084543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484303503T Expired DE3470439D1 (en) | 1983-09-30 | 1984-05-23 | A nonvolatile semiconductor memory device |
Country Status (4)
Country | Link |
---|---|
US (1) | US4630087A (de) |
EP (1) | EP0136771B1 (de) |
JP (1) | JPS6074577A (de) |
DE (1) | DE3470439D1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4672241A (en) * | 1985-05-29 | 1987-06-09 | Advanced Micro Devices, Inc. | High voltage isolation circuit for CMOS networks |
USRE37308E1 (en) * | 1986-12-22 | 2001-08-07 | Stmicroelectronics S.R.L. | EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit |
IT1199828B (it) * | 1986-12-22 | 1989-01-05 | Sgs Microelettronica Spa | Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit |
JPS6432494A (en) * | 1987-07-27 | 1989-02-02 | Mitsubishi Electric Corp | Non-volatile semiconductor storage device |
JP2647101B2 (ja) * | 1987-11-17 | 1997-08-27 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
JP2685825B2 (ja) * | 1988-08-12 | 1997-12-03 | 株式会社東芝 | 不揮発性半導体メモリ |
KR100204721B1 (ko) | 1989-08-18 | 1999-06-15 | 가나이 쓰도무 | 메모리블럭으로 분활된 메모리셀 어레이를 갖는 전기적 소거 가능한 반도체 불휘발성 기억장치 |
JP2679389B2 (ja) * | 1990-10-12 | 1997-11-19 | 日本電気株式会社 | 不揮発性半導体記憶セルのデータ消去方法 |
KR940005695B1 (ko) * | 1990-12-19 | 1994-06-22 | 삼성전자 주식회사 | 불휘발성 기억소자의 로우 디코더 회로 |
US5327378A (en) * | 1992-03-04 | 1994-07-05 | Waferscale Integration, Inc. | Easily manufacturable compact EPROM |
US5719520A (en) * | 1994-02-15 | 1998-02-17 | Tadashi Shibata | Multi-valued ROM circuit #7 |
JP2590744B2 (ja) * | 1994-07-28 | 1997-03-12 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
US5761121A (en) * | 1996-10-31 | 1998-06-02 | Programmable Microelectronics Corporation | PMOS single-poly non-volatile memory structure |
US5818082A (en) * | 1996-03-04 | 1998-10-06 | Advanced Micro Devices, Inc. | E2 PROM device having erase gate in oxide isolation region in shallow trench and method of manufacture thereof |
US5889303A (en) * | 1997-04-07 | 1999-03-30 | Motorola, Inc. | Split-Control gate electrically erasable programmable read only memory (EEPROM) cell |
JP3159152B2 (ja) * | 1997-12-26 | 2001-04-23 | 日本電気株式会社 | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置のデータ消去方法 |
JP2004297028A (ja) * | 2003-02-04 | 2004-10-21 | Sharp Corp | 半導体記憶装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3825946A (en) * | 1971-01-15 | 1974-07-23 | Intel Corp | Electrically alterable floating gate device and method for altering same |
US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
JPS6014438B2 (ja) * | 1979-08-29 | 1985-04-13 | 株式会社東芝 | 不揮発性半導体メモリ− |
JPS57141969A (en) * | 1981-02-27 | 1982-09-02 | Toshiba Corp | Nonvolatile semiconductor memory |
JPS57157573A (en) * | 1981-03-25 | 1982-09-29 | Fujitsu Ltd | Semiconductor non-volatile memory cell |
-
1983
- 1983-09-30 JP JP58180512A patent/JPS6074577A/ja active Pending
-
1984
- 1984-05-22 US US06/613,059 patent/US4630087A/en not_active Expired - Lifetime
- 1984-05-23 EP EP84303503A patent/EP0136771B1/de not_active Expired
- 1984-05-23 DE DE8484303503T patent/DE3470439D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4630087A (en) | 1986-12-16 |
EP0136771B1 (de) | 1988-04-13 |
EP0136771A3 (en) | 1986-12-30 |
EP0136771A2 (de) | 1985-04-10 |
JPS6074577A (ja) | 1985-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |