DE3375253D1 - Polymeric boron-nitrogen dopant - Google Patents

Polymeric boron-nitrogen dopant

Info

Publication number
DE3375253D1
DE3375253D1 DE8383108196T DE3375253T DE3375253D1 DE 3375253 D1 DE3375253 D1 DE 3375253D1 DE 8383108196 T DE8383108196 T DE 8383108196T DE 3375253 T DE3375253 T DE 3375253T DE 3375253 D1 DE3375253 D1 DE 3375253D1
Authority
DE
Germany
Prior art keywords
nitrogen dopant
polymeric boron
boron
polymeric
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383108196T
Other languages
English (en)
Inventor
Stephen Wakefield Kirtley
George Sidney Wooster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Allied Corp
Original Assignee
Allied Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Allied Corp filed Critical Allied Corp
Application granted granted Critical
Publication of DE3375253D1 publication Critical patent/DE3375253D1/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • DTEXTILES; PAPER
    • D04BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
    • D04HMAKING TEXTILE FABRICS, e.g. FROM FIBRES OR FILAMENTARY MATERIAL; FABRICS MADE BY SUCH PROCESSES OR APPARATUS, e.g. FELTS, NON-WOVEN FABRICS; COTTON-WOOL; WADDING ; NON-WOVEN FABRICS FROM STAPLE FIBRES, FILAMENTS OR YARNS, BONDED WITH AT LEAST ONE WEB-LIKE MATERIAL DURING THEIR CONSOLIDATION
    • D04H5/00Non woven fabrics formed of mixtures of relatively short fibres and yarns or like filamentary material of substantial length
    • D04H5/06Non woven fabrics formed of mixtures of relatively short fibres and yarns or like filamentary material of substantial length strengthened or consolidated by welding-together thermoplastic fibres, filaments, or yarns
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G79/00Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
    • C08G79/08Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule a linkage containing boron
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L85/00Compositions of macromolecular compounds obtained by reactions forming a linkage in the main chain of the macromolecule containing atoms other than silicon, sulfur, nitrogen, oxygen and carbon; Compositions of derivatives of such polymers
    • C08L85/04Compositions of macromolecular compounds obtained by reactions forming a linkage in the main chain of the macromolecule containing atoms other than silicon, sulfur, nitrogen, oxygen and carbon; Compositions of derivatives of such polymers containing boron
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225Diffusion sources

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Textile Engineering (AREA)
  • Materials Engineering (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8383108196T 1982-09-23 1983-08-19 Polymeric boron-nitrogen dopant Expired DE3375253D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42194582A 1982-09-23 1982-09-23

Publications (1)

Publication Number Publication Date
DE3375253D1 true DE3375253D1 (de) 1988-02-11

Family

ID=23672737

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383108196T Expired DE3375253D1 (de) 1982-09-23 1983-08-19 Polymeric boron-nitrogen dopant

Country Status (4)

Country Link
EP (1) EP0104412B1 (de)
JP (1) JPS5980466A (de)
KR (1) KR850000463A (de)
DE (1) DE3375253D1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165507A3 (de) * 1984-06-18 1987-12-02 Allied Corporation Phosphortriamide und Polymere daraus als Dotiermittel
FR2629463B1 (fr) * 1988-04-01 1990-12-14 Rhone Poulenc Chimie Procede de preparation de polymeres a base de bore et d'azote precurseurs de nitrure de bore
JPH0758698B2 (ja) * 1990-08-22 1995-06-21 信越半導体株式会社 半導体ウエーハヘのボロン拡散方法
FR2695645B1 (fr) * 1992-09-15 1994-12-16 Rhone Poulenc Chimie Procédé de préparation de polyaminoborazines.
US7125499B2 (en) 2001-08-13 2006-10-24 Lcp Tech Holdings, Llc Liquid crystal polymer technology chemicals and applications
US8518170B2 (en) * 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US9076719B2 (en) 2013-08-21 2015-07-07 The Regents Of The University Of California Doping of a substrate via a dopant containing polymer film
JP6072129B2 (ja) 2014-04-30 2017-02-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ドーパント含有ポリマー膜を用いた基体のドーピング
JP6986425B2 (ja) * 2016-12-22 2021-12-22 東京応化工業株式会社 不純物拡散剤組成物、及び半導体基板の製造方法
JP6946210B2 (ja) * 2017-06-23 2021-10-06 東京応化工業株式会社 拡散剤組成物、及び半導体基板の製造方法
JP7110021B2 (ja) * 2017-08-04 2022-08-01 東京応化工業株式会社 拡散剤組成物、及び半導体基板の製造方法
CN114068758B (zh) * 2020-07-30 2024-05-31 一道新能源科技股份有限公司 一种硼扩散处理控制方法、装置和炉管

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3052641A (en) * 1959-08-03 1962-09-04 United States Borax Chem Boron-nitrogen polymers
GB1018031A (en) * 1961-02-16 1966-01-26 Nat Res Dev Polymers containing borazole rings
US3341474A (en) * 1961-12-01 1967-09-12 American Potash & Chem Corp Borazene oxide derivative polymers and preparation thereof
US3375274A (en) * 1964-11-20 1968-03-26 Olin Mathieson Alkylene borazine polymers
DE2007752B2 (de) * 1970-02-19 1978-07-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von dotiertem Halbleitermaterial
FR2245407B3 (de) * 1973-09-19 1977-04-08 Texas Instruments Inc
DE2614324A1 (de) * 1976-04-02 1977-10-13 Gribov Verfahren zur herstellung einer schichtbildenden loesung

Also Published As

Publication number Publication date
KR850000463A (ko) 1985-02-27
JPS5980466A (ja) 1984-05-09
EP0104412A1 (de) 1984-04-04
EP0104412B1 (de) 1988-01-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee