DE3312648A1 - Programmierbarer lesespeicher und verfahren zum herstellen desselben - Google Patents

Programmierbarer lesespeicher und verfahren zum herstellen desselben

Info

Publication number: DE3312648A1
Authority: DE; Germany
Prior art keywords: buried; region; programmable read; area; areas
Prior art date: 1982-04-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Ceased

Application number

DE19833312648

Other languages

German (de)

English (en)

Inventor

Ronald Lee 95030 Los Gatos Calif. Cline

George William 09005 Ben Lomond Calif. Conner

Raymond George 65136 San José Calif. Donald

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Gloeilampenfabrieken NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-04-12

Filing date

1983-04-08

Publication date

1983-10-27

1983-04-08 Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV

1983-10-27 Publication of DE3312648A1 publication Critical patent/DE3312648A1/de

Status Ceased legal-status Critical Current

Links

230000015654 memory Effects 0.000 title claims description 60
238000004519 manufacturing process Methods 0.000 title claims description 15
239000000758 substrate Substances 0.000 claims description 46
239000004065 semiconductor Substances 0.000 claims description 35
239000002019 doping agent Substances 0.000 claims description 14
239000012535 impurity Substances 0.000 claims description 14
238000000034 method Methods 0.000 claims description 13
230000007704 transition Effects 0.000 claims description 13
239000011159 matrix material Substances 0.000 claims description 10
239000013078 crystal Substances 0.000 claims description 6
238000005468 ion implantation Methods 0.000 claims description 6
230000015572 biosynthetic process Effects 0.000 claims description 4
239000000463 material Substances 0.000 claims description 4
238000004140 cleaning Methods 0.000 claims description 3
230000001590 oxidative effect Effects 0.000 claims description 3
238000011109 contamination Methods 0.000 claims 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
239000004020 conductor Substances 0.000 description 20
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
229910052782 aluminium Inorganic materials 0.000 description 17
229920002120 photoresistant polymer Polymers 0.000 description 17
230000003071 parasitic effect Effects 0.000 description 15
239000000377 silicon dioxide Substances 0.000 description 14
235000012239 silicon dioxide Nutrition 0.000 description 13
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 12
229910052796 boron Inorganic materials 0.000 description 12
238000005530 etching Methods 0.000 description 12
150000002500 ions Chemical class 0.000 description 10
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
239000001301 oxygen Substances 0.000 description 8
229910052760 oxygen Inorganic materials 0.000 description 8
229910052710 silicon Inorganic materials 0.000 description 8
239000010703 silicon Substances 0.000 description 8
229910052785 arsenic Inorganic materials 0.000 description 7
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 7
238000002513 implantation Methods 0.000 description 7
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
239000001257 hydrogen Substances 0.000 description 6
229910052739 hydrogen Inorganic materials 0.000 description 6
229910052757 nitrogen Inorganic materials 0.000 description 6
229910052787 antimony Inorganic materials 0.000 description 5
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 5
230000015556 catabolic process Effects 0.000 description 5
239000002131 composite material Substances 0.000 description 5
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
230000007547 defect Effects 0.000 description 4
238000009826 distribution Methods 0.000 description 4
229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
230000000694 effects Effects 0.000 description 3
PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 3
150000004767 nitrides Chemical class 0.000 description 3
230000002093 peripheral effect Effects 0.000 description 3
229910052698 phosphorus Inorganic materials 0.000 description 3
239000011574 phosphorus Substances 0.000 description 3
229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
230000008569 process Effects 0.000 description 3
238000003860 storage Methods 0.000 description 3
MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
238000011282 treatment Methods 0.000 description 3
DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
241000293849 Cordylanthus Species 0.000 description 2
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
229910000147 aluminium phosphate Inorganic materials 0.000 description 2
230000007423 decrease Effects 0.000 description 2
230000003247 decreasing effect Effects 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
230000001771 impaired effect Effects 0.000 description 2
229910021334 nickel silicide Inorganic materials 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
230000001105 regulatory effect Effects 0.000 description 2
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
ZXKIFUWANBZSKF-UHFFFAOYSA-N [I].CC(O)=O Chemical class [I].CC(O)=O ZXKIFUWANBZSKF-UHFFFAOYSA-N 0.000 description 1
CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
210000003323 beak Anatomy 0.000 description 1
230000008901 benefit Effects 0.000 description 1
239000002800 charge carrier Substances 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
230000000295 complement effect Effects 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
238000007599 discharging Methods 0.000 description 1
238000010292 electrical insulation Methods 0.000 description 1
239000012777 electrically insulating material Substances 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000005496 eutectics Effects 0.000 description 1
238000010304 firing Methods 0.000 description 1
238000007667 floating Methods 0.000 description 1
230000006870 function Effects 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
238000002955 isolation Methods 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
229920006395 saturated elastomer Polymers 0.000 description 1
229910021332 silicide Inorganic materials 0.000 description 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
238000003892 spreading Methods 0.000 description 1
230000007480 spreading Effects 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
238000005728 strengthening Methods 0.000 description 1
239000010936 titanium Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
- H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Inorganic Chemistry (AREA)
Chemical & Material Sciences (AREA)
Semiconductor Memories (AREA)
Read Only Memory (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

DE19833312648 1982-04-12 1983-04-08 Programmierbarer lesespeicher und verfahren zum herstellen desselben Ceased DE3312648A1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US36749282A	1982-04-12	1982-04-12

Publications (1)

Publication Number	Publication Date
DE3312648A1 true DE3312648A1 (de)	1983-10-27

Family

ID=23447392

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE19833312648 Ceased DE3312648A1 (de)	1982-04-12	1983-04-08	Programmierbarer lesespeicher und verfahren zum herstellen desselben

Country Status (5)

Country	Link
JP (1)	JPH0618256B2 (nl)
DE (1)	DE3312648A1 (nl)
FR (1)	FR2525011B1 (nl)
GB (1)	GB2118775B (nl)
NL (1)	NL8301234A (nl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0644609B2 (ja) *	1984-12-25	1994-06-08	日本電気株式会社	接合破壊型ｐｒｏｍ
JPS61154163A (ja) *	1984-12-27	1986-07-12	Nec Corp	接合破壊型ｐｒｏｍ
US4748489A (en) *	1985-03-22	1988-05-31	Nec Corporation	Integrated circuit semiconductor device having improved isolation region
JPH0995344A (ja) *	1995-09-28	1997-04-08	Fujita Kimura	チューブ内容物押出装置
JPH09301390A (ja) *	1996-05-08	1997-11-25	Kashin Rin	自動絞り出し装置
DE102004006374A1 (de)	2004-02-09	2005-08-25	Volkswagen Ag	Verfahren und Vorrichtung zum Aktivieren einer elektrischen Parkbremse

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2369652A1 (fr) *	1976-10-29	1978-05-26	Radiotechnique Compelec	Memoire morte programmable a transistors
EP0084465A2 (en) *	1982-01-04	1983-07-27	Fairchild Semiconductor Corporation	Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS55127061A (en) *	1979-03-26	1980-10-01	Hitachi Ltd	Manufacture of semiconductor memory
JPS57194566A (en) *	1981-05-27	1982-11-30	Hitachi Ltd	Semiconductor device and manufacture thereof

1983
- 1983-04-08 NL NL8301234A patent/NL8301234A/nl not_active Application Discontinuation
- 1983-04-08 GB GB08309555A patent/GB2118775B/en not_active Expired
- 1983-04-08 DE DE19833312648 patent/DE3312648A1/de not_active Ceased
- 1983-04-11 FR FR8305865A patent/FR2525011B1/fr not_active Expired
- 1983-04-12 JP JP6311283A patent/JPH0618256B2/ja not_active Expired - Lifetime

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2369652A1 (fr) *	1976-10-29	1978-05-26	Radiotechnique Compelec	Memoire morte programmable a transistors
EP0084465A2 (en) *	1982-01-04	1983-07-27	Fairchild Semiconductor Corporation	Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Electronics, 24. Febr. 1982, S. 184 *

Also Published As

Publication number	Publication date
JPH0618256B2 (ja)	1994-03-09
GB2118775A (en)	1983-11-02
GB2118775B (en)	1985-11-06
NL8301234A (nl)	1983-11-01
FR2525011A1 (fr)	1983-10-14
FR2525011B1 (fr)	1988-11-18
JPS58186963A (ja)	1983-11-01

Legal Events

Date	Code	Title	Description
1990-04-26	8110	Request for examination paragraph 44
1990-05-17	8125	Change of the main classification	Ipc: H01L 27/112
1995-06-22	8127	New person/name/address of the applicant	Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL
1998-07-30	8131	Rejection

Publication	Publication Date	Title
DE2745857C2 (nl)	1988-12-08
DE4116690C2 (de)	1996-01-25	Elementisolationsaufbau einer Halbleitereinrichtung und Verfahren zur Herstellung derselben
EP0001586B1 (de)	1981-09-23	Integrierte Halbleiteranordnung mit vertikalen NPN- und PNP-Strukturen und Verfahren zur Herstellung
DE3511229A1 (de)	1985-10-24	Verfahren zur herstellung isolierter bipolartransistoren in verbindung mit cmos-halbleiterstrukturen
DE2711562A1 (de)	1977-09-29	Halbleiteranordnung und deren herstellung
EP0001574B1 (de)	1982-01-13	Halbleiteranordnung für Widerstandsstrukturen in hochintegrierten Schaltkreisen und Verfahren zur Herstellung dieser Halbleiteranordnung
DE3702810A1 (de)	1987-08-06	Monolithisch integrierte halbleitereinrichtung enthaltend bipolaruebergang-transistoren, cmos und dmos transistoren und niedrigleck-dioden und ein verfahren zu ihrer herstellung
DE2545892A1 (de)	1976-05-13	Kombiniertes verfahren zur herstellung oxyd-isolierter vertikaler bipolartransistoren und komplementaerer oxyd-isolierter lateraler bipolartransistoren
DE2203183A1 (de)	1972-08-10	Integrierte Halbleiterschaltungsanordnung
DE2032315A1 (de)	1971-01-28	Halbleiteranordnung mit emitterge koppelten inversen Transistoren
DE2716123A1 (de)	1977-10-20	Integrierte injektions-halbleiterschaltung und verfahren zu ihrer herstellung
DE2749607A1 (de)	1978-05-24	Halbleiteranordnung und verfahren zu deren herstellung
DE2420239A1 (de)	1974-11-28	Verfahren zur herstellung doppelt diffundierter lateraler transistoren
DE69324003T2 (de)	1999-07-15	Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung
DE2640981A1 (de)	1977-03-24	Verfahren zur herstellung von halbleiteranordnungen unter verwendung einer schutzschicht aus oxid
DE3001032A1 (de)	1980-07-24	Halbleiteranordnung und verfahren zu deren herstellung
DE3688172T2 (de)	1993-10-14	Methode zur Herstellung einer logischen Matrix mit Polysilizium-Emitterkontakt und dadurch hergstelltes Bauelement.
DE69131390T2 (de)	1999-11-18	Verfahren zur Herstellung einer vergrabenen Drain- oder Kollektorzone für monolythische Halbleiteranordnungen
DE3312648A1 (de)	1983-10-27	Programmierbarer lesespeicher und verfahren zum herstellen desselben
EP1415340A2 (de)	2004-05-06	Verfahren zum parallelen herstellen eines mos-transistors und eines bipolartransistors
DE3423776A1 (de)	1985-01-17	Verfahren zur herstellung einer halbleiteranordnung und nach diesem verfahren hergestellte halbleiteranordnung
DE69531127T2 (de)	2004-04-08	Halbleitervorrichtung und Verfahren zu deren Herstellung
DE69325206T2 (de)	2000-01-20	Vergrabener Lawinendiode
DE3312871C2 (de)	1994-06-01	Programmierbarer Lesespeicher und Verfahren zum Herstellen desselben
DE69932564T2 (de)	2007-10-25	Herstellungsverfahren für eine ultradünne, elektrostatische SOI-Entladungsschutzvorrichtung