DE3278182D1 - Method for manufacturing a mask type read only memory - Google Patents
Method for manufacturing a mask type read only memoryInfo
- Publication number
- DE3278182D1 DE3278182D1 DE8282304312T DE3278182T DE3278182D1 DE 3278182 D1 DE3278182 D1 DE 3278182D1 DE 8282304312 T DE8282304312 T DE 8282304312T DE 3278182 T DE3278182 T DE 3278182T DE 3278182 D1 DE3278182 D1 DE 3278182D1
- Authority
- DE
- Germany
- Prior art keywords
- memory
- manufacturing
- mask type
- type read
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/38—Doping programmed, e.g. mask ROM
- H10B20/383—Channel doping programmed
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56128450A JPS5830154A (ja) | 1981-08-17 | 1981-08-17 | 固定記憶半導体装置およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3278182D1 true DE3278182D1 (en) | 1988-04-07 |
Family
ID=14985006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282304312T Expired DE3278182D1 (en) | 1981-08-17 | 1982-08-16 | Method for manufacturing a mask type read only memory |
Country Status (4)
Country | Link |
---|---|
US (1) | US4467520A (de) |
EP (1) | EP0073130B2 (de) |
JP (1) | JPS5830154A (de) |
DE (1) | DE3278182D1 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4536944A (en) * | 1982-12-29 | 1985-08-27 | International Business Machines Corporation | Method of making ROM/PLA semiconductor device by late stage personalization |
US4513494A (en) * | 1983-07-19 | 1985-04-30 | American Microsystems, Incorporated | Late mask process for programming read only memories |
JPS60174682A (ja) * | 1984-02-20 | 1985-09-07 | Tsukahara Kogyo Kk | 弾力性を有する多孔性印材の製造方法 |
JPS61287164A (ja) * | 1985-06-13 | 1986-12-17 | Ricoh Co Ltd | 半導体メモリ装置 |
JPH06104358B2 (ja) * | 1985-06-24 | 1994-12-21 | 塚原工業株式会社 | インキ吸蔵型印判材の製造方法 |
JPS6292362A (ja) * | 1985-10-17 | 1987-04-27 | Toshiba Corp | 半導体装置の製造方法 |
JP2723147B2 (ja) * | 1986-06-25 | 1998-03-09 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
JPS6381948A (ja) * | 1986-09-26 | 1988-04-12 | Toshiba Corp | 多層配線半導体装置 |
US5019878A (en) * | 1989-03-31 | 1991-05-28 | Texas Instruments Incorporated | Programmable interconnect or cell using silicided MOS transistors |
US5068696A (en) * | 1989-03-31 | 1991-11-26 | Texas Instruments Incorporated | Programmable interconnect or cell using silicided MOS transistors |
US5091328A (en) * | 1989-11-21 | 1992-02-25 | National Semiconductor Corporation | Method of late programming MOS devices |
IT1239989B (it) * | 1990-03-30 | 1993-11-27 | Sgs Thomson Microelectronics | Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura |
US5486487A (en) * | 1990-03-30 | 1996-01-23 | Sgs-Thomson Microelectronics S.R.L. | Method for adjusting the threshold of a read-only memory to achieve low capacitance and high breakdown voltage |
JPH0487370A (ja) * | 1990-07-30 | 1992-03-19 | Sharp Corp | 半導体装置の製造方法 |
US5200355A (en) * | 1990-12-10 | 1993-04-06 | Samsung Electronics Co., Ltd. | Method for manufacturing a mask read only memory device |
JP2604071B2 (ja) * | 1991-05-14 | 1997-04-23 | 株式会社東芝 | 半導体装置の製造方法 |
US5432103A (en) * | 1992-06-22 | 1995-07-11 | National Semiconductor Corporation | Method of making semiconductor ROM cell programmed using source mask |
KR0140691B1 (ko) * | 1992-08-20 | 1998-06-01 | 문정환 | 반도체 장치의 마스크롬 제조방법 |
JP3177036B2 (ja) * | 1992-12-24 | 2001-06-18 | 三菱鉛筆株式会社 | 連続気泡を有するスポンジゴム印字体の製造方法 |
US5592012A (en) * | 1993-04-06 | 1997-01-07 | Sharp Kabushiki Kaisha | Multivalued semiconductor read only storage device and method of driving the device and method of manufacturing the device |
US5429974A (en) * | 1993-10-22 | 1995-07-04 | United Microelectronics Corporation | Post passivation mask ROM programming method |
US5514609A (en) * | 1994-05-13 | 1996-05-07 | Mosel Vitelic, Inc. | Through glass ROM code implant to reduce product delivering time |
US5796149A (en) * | 1994-09-09 | 1998-08-18 | Nippon Steel Corporation | Semiconductor memory using different concentration impurity diffused layers |
US5514610A (en) * | 1995-03-17 | 1996-05-07 | Taiwan Semiconductor Manufacturing Company | Method of making an optimized code ion implantation procedure for read only memory devices |
GB2300983A (en) * | 1995-05-13 | 1996-11-20 | Holtek Microelectronics Inc | Flexible CMOS IC layout method |
US5693551A (en) * | 1995-09-19 | 1997-12-02 | United Microelectronics, Corporation | Method for fabricating a tri-state read-only memory device |
IT1288720B1 (it) * | 1996-10-01 | 1998-09-24 | Skf Ind Spa | Mozzo o gruppo mozzo ruota che permette un migliore montaggio e smontaggio di un organo frenante. |
IT1289781B1 (it) * | 1996-12-20 | 1998-10-16 | Skf Ind Spa | Unita' mozzo-ruota, in particolare per un autoveicolo. |
US6238983B1 (en) * | 1999-08-30 | 2001-05-29 | Taiwan Semiconductor Manufacturing Company | Alignment dip back oxide and code implant through poly to approach the depletion mode device character |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3914855A (en) * | 1974-05-09 | 1975-10-28 | Bell Telephone Labor Inc | Methods for making MOS read-only memories |
JPS5851427B2 (ja) * | 1975-09-04 | 1983-11-16 | 株式会社日立製作所 | 絶縁ゲ−ト型リ−ド・オンリ−・メモリの製造方法 |
JPS5333076A (en) * | 1976-09-09 | 1978-03-28 | Toshiba Corp | Production of mos type integrated circuit |
JPS5375781U (de) * | 1976-11-29 | 1978-06-24 | ||
US4108686A (en) * | 1977-07-22 | 1978-08-22 | Rca Corp. | Method of making an insulated gate field effect transistor by implanted double counterdoping |
US4384399A (en) * | 1978-03-20 | 1983-05-24 | Texas Instruments Incorporated | Method of making a metal programmable MOS read only memory device |
DE2909197A1 (de) * | 1978-03-20 | 1979-10-04 | Texas Instruments Inc | Verfahren zur herstellung eines festspeichers und festspeichermatrix |
US4364167A (en) * | 1979-11-28 | 1982-12-21 | General Motors Corporation | Programming an IGFET read-only-memory |
US4336647A (en) * | 1979-12-21 | 1982-06-29 | Texas Instruments Incorporated | Method of making implant programmable N-channel read only memory |
US4356042A (en) * | 1980-11-07 | 1982-10-26 | Mostek Corporation | Method for fabricating a semiconductor read only memory |
US4406049A (en) * | 1980-12-11 | 1983-09-27 | Rockwell International Corporation | Very high density cells comprising a ROM and method of manufacturing same |
US4380866A (en) * | 1981-05-04 | 1983-04-26 | Motorola, Inc. | Method of programming ROM by offset masking of selected gates |
US4365405A (en) * | 1981-05-28 | 1982-12-28 | General Motors Corporation | Method of late programming read only memory devices |
US4364165A (en) * | 1981-05-28 | 1982-12-21 | General Motors Corporation | Late programming using a silicon nitride interlayer |
-
1981
- 1981-08-17 JP JP56128450A patent/JPS5830154A/ja active Granted
-
1982
- 1982-08-16 DE DE8282304312T patent/DE3278182D1/de not_active Expired
- 1982-08-16 EP EP82304312A patent/EP0073130B2/de not_active Expired - Lifetime
- 1982-08-17 US US06/408,873 patent/US4467520A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5830154A (ja) | 1983-02-22 |
US4467520A (en) | 1984-08-28 |
EP0073130A2 (de) | 1983-03-02 |
EP0073130B1 (de) | 1988-03-02 |
EP0073130A3 (en) | 1985-01-16 |
JPH0328832B2 (de) | 1991-04-22 |
EP0073130B2 (de) | 1993-05-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8366 | Restricted maintained after opposition proceedings | ||
8339 | Ceased/non-payment of the annual fee |