IT1239989B - Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura - Google Patents
Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola letturaInfo
- Publication number
- IT1239989B IT1239989B IT19903A IT1990390A IT1239989B IT 1239989 B IT1239989 B IT 1239989B IT 19903 A IT19903 A IT 19903A IT 1990390 A IT1990390 A IT 1990390A IT 1239989 B IT1239989 B IT 1239989B
- Authority
- IT
- Italy
- Prior art keywords
- programmed
- read
- cell structure
- memory circuits
- low capacity
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT19903A IT1239989B (it) | 1990-03-30 | 1990-03-30 | Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura |
EP91104217A EP0450389B1 (en) | 1990-03-30 | 1991-03-19 | A low-capacitance, high breakdown voltage programmed cell structure for read-only memory circuits |
DE69112882T DE69112882T2 (de) | 1990-03-30 | 1991-03-19 | Zellstruktur mit niedriger Kapazität und mit hoher Durchbruchspannung programmiert für Festwertspeicherschaltungen. |
JP8596791A JPH0582758A (ja) | 1990-03-30 | 1991-03-27 | Rom回路用プログラムセル構造 |
US08/139,800 US5486487A (en) | 1990-03-30 | 1993-10-19 | Method for adjusting the threshold of a read-only memory to achieve low capacitance and high breakdown voltage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT19903A IT1239989B (it) | 1990-03-30 | 1990-03-30 | Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura |
Publications (3)
Publication Number | Publication Date |
---|---|
IT9019903A0 IT9019903A0 (it) | 1990-03-30 |
IT9019903A1 IT9019903A1 (it) | 1991-09-30 |
IT1239989B true IT1239989B (it) | 1993-11-27 |
Family
ID=11162207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT19903A IT1239989B (it) | 1990-03-30 | 1990-03-30 | Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0450389B1 (it) |
JP (1) | JPH0582758A (it) |
DE (1) | DE69112882T2 (it) |
IT (1) | IT1239989B (it) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5291435A (en) * | 1993-01-07 | 1994-03-01 | Yu Shih Chiang | Read-only memory cell |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4268950A (en) * | 1978-06-05 | 1981-05-26 | Texas Instruments Incorporated | Post-metal ion implant programmable MOS read only memory |
US4359817A (en) * | 1981-05-28 | 1982-11-23 | General Motors Corporation | Method for making late programmable read-only memory devices |
JPS5830154A (ja) * | 1981-08-17 | 1983-02-22 | Toshiba Corp | 固定記憶半導体装置およびその製造方法 |
-
1990
- 1990-03-30 IT IT19903A patent/IT1239989B/it active IP Right Grant
-
1991
- 1991-03-19 EP EP91104217A patent/EP0450389B1/en not_active Expired - Lifetime
- 1991-03-19 DE DE69112882T patent/DE69112882T2/de not_active Expired - Fee Related
- 1991-03-27 JP JP8596791A patent/JPH0582758A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0450389A2 (en) | 1991-10-09 |
EP0450389B1 (en) | 1995-09-13 |
EP0450389A3 (it) | 1994-02-23 |
DE69112882D1 (de) | 1995-10-19 |
JPH0582758A (ja) | 1993-04-02 |
DE69112882T2 (de) | 1996-02-15 |
IT9019903A0 (it) | 1990-03-30 |
IT9019903A1 (it) | 1991-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970329 |