IT1239989B - Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura - Google Patents

Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura

Info

Publication number
IT1239989B
IT1239989B IT19903A IT1990390A IT1239989B IT 1239989 B IT1239989 B IT 1239989B IT 19903 A IT19903 A IT 19903A IT 1990390 A IT1990390 A IT 1990390A IT 1239989 B IT1239989 B IT 1239989B
Authority
IT
Italy
Prior art keywords
programmed
read
cell structure
memory circuits
low capacity
Prior art date
Application number
IT19903A
Other languages
English (en)
Other versions
IT9019903A0 (it
IT9019903A1 (it
Inventor
Giancarlo Ginami
Enrico Laurin
Silvia Lucherini
Bruno Vajana
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT19903A priority Critical patent/IT1239989B/it
Publication of IT9019903A0 publication Critical patent/IT9019903A0/it
Priority to EP91104217A priority patent/EP0450389B1/en
Priority to DE69112882T priority patent/DE69112882T2/de
Priority to JP8596791A priority patent/JPH0582758A/ja
Publication of IT9019903A1 publication Critical patent/IT9019903A1/it
Priority to US08/139,800 priority patent/US5486487A/en
Application granted granted Critical
Publication of IT1239989B publication Critical patent/IT1239989B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
IT19903A 1990-03-30 1990-03-30 Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura IT1239989B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT19903A IT1239989B (it) 1990-03-30 1990-03-30 Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura
EP91104217A EP0450389B1 (en) 1990-03-30 1991-03-19 A low-capacitance, high breakdown voltage programmed cell structure for read-only memory circuits
DE69112882T DE69112882T2 (de) 1990-03-30 1991-03-19 Zellstruktur mit niedriger Kapazität und mit hoher Durchbruchspannung programmiert für Festwertspeicherschaltungen.
JP8596791A JPH0582758A (ja) 1990-03-30 1991-03-27 Ｒｏｍ回路用プログラムセル構造
US08/139,800 US5486487A (en) 1990-03-30 1993-10-19 Method for adjusting the threshold of a read-only memory to achieve low capacitance and high breakdown voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19903A IT1239989B (it) 1990-03-30 1990-03-30 Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura

Publications (3)

Publication Number Publication Date
IT9019903A0 IT9019903A0 (it) 1990-03-30
IT9019903A1 IT9019903A1 (it) 1991-09-30
IT1239989B true IT1239989B (it) 1993-11-27

Family

ID=11162207

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19903A IT1239989B (it) 1990-03-30 1990-03-30 Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura

Country Status (4)

Country Link
EP (1) EP0450389B1 (it)
JP (1) JPH0582758A (it)
DE (1) DE69112882T2 (it)
IT (1) IT1239989B (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291435A (en) * 1993-01-07 1994-03-01 Yu Shih Chiang Read-only memory cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268950A (en) * 1978-06-05 1981-05-26 Texas Instruments Incorporated Post-metal ion implant programmable MOS read only memory
US4359817A (en) * 1981-05-28 1982-11-23 General Motors Corporation Method for making late programmable read-only memory devices
JPS5830154A (ja) * 1981-08-17 1983-02-22 Toshiba Corp 固定記憶半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP0450389A2 (en) 1991-10-09
EP0450389B1 (en) 1995-09-13
EP0450389A3 (it) 1994-02-23
DE69112882D1 (de) 1995-10-19
JPH0582758A (ja) 1993-04-02
DE69112882T2 (de) 1996-02-15
IT9019903A0 (it) 1990-03-30
IT9019903A1 (it) 1991-09-30

Similar Documents

Publication Publication Date Title
KR960008848A (ko) 반도체 기억장치 및 고전압 절환회로
DE69227432D1 (de) Spannungsgenerator für eine Speicher-Anordnung
ITMI922645A1 (it) Dispositivo di memoria a semiconduttore con funzione di autoripristino di bassa potenza elettrica
ITRM910712A1 (it) Circuito di generazione di alta tensione per un circuito di memoria a semiconduttori.
IT1150062B (it) Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione
DE68920699D1 (de) Speicherzelle und Leseschaltung.
KR950701125A (ko) 여분구조를 가진 집적 반도체 메모리(integrated semiconductor memory with redundancy arrangement)
DE3675423D1 (de) Wortlinienspannungserhoehungstakt- und decodersteuerungsstromkreise in halbleiterspeichern.
DE69332728D1 (de) Datenausgangspuffer in Halbleiterspeicheranordnungen
EP0558970A3 (en) Sensing circuit for semiconductor memory with limited bitline voltage swing
DE69627152D1 (de) Leseschaltung für Halbleiter-Speicherzellen
IT1264164B1 (it) Interruttore di bassa tensione in scatola isolante
DE69103337D1 (de) Festkörperspannungsspeicherzelle.
DE69220465D1 (de) Halbleiteranordnung mit Speicherzelle
EP0414477A3 (en) Semiconductor memory device having redundant memory cells
DE69522545D1 (de) Halbleiterspeicheranordnung mit eingebauten Redundanzspeicherzellen
IT1242185B (it) Circuito e metodo per l'accesso ai dati di una memoria ad accesso seriale con una bassa corrente di funzionamento.
IT1239989B (it) Struttura di cella programmata,a bassa capacita' e ad elevata tensione di rottura, per circuiti di memoria a sola lettura
DE69413084D1 (de) Unterstützte Niederspannungs-Schreibschaltung
IT1239707B (it) Processo per la realizzazione di una cella di memoria rom a bassa capacita' di drain
IT8722827A0 (it) Dispositivo di commutazione dell'alimentazione di tensione per memorie volatili in tecnologia mos
EP0387102A3 (en) Semi-conductor non-volatile memory and method of writing the same
IT8919875A0 (it) Cella di riferimento per la lettura di dispositivi di memoria eeprom.
DE69231030D1 (de) Entwurf statischer Speicherzellen
DE69524837D1 (de) Asynchrone Speicheranordnung mit seriellem Zugriff und entsprechendes Speicher- und Leseverfahren

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329